• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.36-46
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• 2010

In multi-GHz RF ICs and high-speed digital interfaces, ESD protection devices introduce considerable parasitic capacitance and resistance to inputs and outputs, thereby degrading the RF performance, such as input/output matching, gain, and noise figure. In this paper, the impact of ESD protection devices on the performance of RF ICs is investigated and design methodologies to minimize this impact are discussed. With RF and ESD test results, the 'RF/ESD co-design' method is discussed and compared to the conventional RF ESD protection method which focuses on minimizing the device size.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.2
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• pp.330-335
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• 2008

In this study, highly miniaturized short-wavelength transmission line employing periodically perforated ground metal (PPGM) structures were developed for application to miniaturized on-chip passive component on Si RFIC. The transmission line employing PPGM structure showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PPGM structure was 57% of the conventional coplanar-type transmission line on Si Radio Frequency Integrated Circuit (RFIC) substrate. Basic characteristics of the transmission line employing PPGM structure were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components. According to the results, it was found that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.6
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• pp.777-783
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• 2007

In this work, a highly integrated downconverter MMIC employing HBT(heterojunction bipolar transistor) was developed for application to one chip tranceiver solution of Ku-band commercial wireless communication system. The downconverter MMIC (monolithic microwave integrated circuit) includes mixer filter. amplifier and input/output matching circuit. Especially, spiral inductor structures employing SiN film were used for a suppression of LO and its second harmonic leakage signals. Concretely, they were properly designed so that the self-resonance frequency was accurately tuned to LO and its second harmonic frequency, and they were integrated on the downconverter MMIC.

• Aerospace Engineering and Technology
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• v.7 no.1
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• pp.121-128
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• 2008

In the department of mobile communication technology and satellite communication technology, wireless communication technology division is very important by transmitting and receiving the signals in wireless link environment. Most of all, the components which comprises the transmitter and receiver can decide the RF(Radio Frequency) system performances. Therefore to assure the reliability in the satellite communication field, it is essential to acquire the competitiveness by developing the highly integrated and compact components by means of MMIC(Monolithic Microwave Integrated Circuit) technology. MMIC is the designing and fabricating technology for the RF components. This paper introduces the MMIC technology and describes the technological trend and prospect in the satellite application.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.6
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• pp.964-973
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• 2008

In this study, a short-wavelength coplanar-type transmission line employing periodic ground structure (PGS) was developed for application to miniaturized on-chip passive component on Si Radio Frequency Integrated Circuit (RFIC). The transmission line employing PGS showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PGS structure was 57 % of the conventional coplanar-type transmission line on Si substrate. Using the theoretical analysis. basic characteristics of the transmission line employing PGS (e.g., bandwidth. loss, impedance, and resonance characteristics) were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components on silicon RFIC. According to the results. the bandwidth of the transmission line employing PGS was more than 895 GHz as long as T is less than 20${\mu}m$, and the resonance characteristic was observed in 1239 GHz, which indicates that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.17-24
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• 2000

An area efficient and symmetric dual-level spiral inductor structure is proposed and evaluated in comparison with the conventional single-level spiral inductors. Contrary to the dual-level inductor mutual coupling coefficient of the upper-and lower-level inductors of the dual-level inductor increases with the increases in the number of turns. Because of this, for the same silicon area, the inductances of the dual-level incuctors are 2.5-4 times higher than that of the single-level inductor. Furthermore, the dual-level showed better quality factor that the single-level inductors for the same inductance. It is the intention of this paper to demonstrate that the dual-level can be more useful for the RF integrated circuits than the conventional single-level spiral inductors form the aspects of area efficiency and quality factor. The proposed dual-level inductors are designed and confirmed to be perfectly symmetric, and can also be used as a high-frequency choke.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1083-1090
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• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.381-391
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• 2010

In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.