• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.19-24
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• 2010

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PET substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 600 sec in $O_2$ plasma pretreatment process, the resistivity of GZO films on the PET substrate was $1.90{\times}10^{-3}{\Omega}-cm$.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.262-267
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• 2003

The heteroepitaxial ZnO thin film on sapphire (0001) substrate was prepared by an off-axis Radio Frequency(RF) magnetron sputtering. The crystallinity of ZnO thin film was affected by deposition pressure, RF power, and substrate temperature. High quality heteroepitaxial ZnO thin film was obtained when the kinetic energy of sputtered particles is well harmonized with the surface mobility. In the result of Photoluminescence(PL) of heteroepitaxial ZnO thin film, Ultraviolet(UV) emissions at 3.36 and 3.28 eV were observed at low(17 K) and Room Temperature(RT). respectively. As the ZnO thin film was annealed in O$_2$ambient, the crystallinity was improved while UV emission was drastically decreased.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.324-324
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.39-39
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• 1996

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.377-383
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• 2009

Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire substrate by using radio-frequency magnetron sputtering and were performed in the temperature range of $600-900^{\circ}C$ by rapid thermal annealing (RTA). The crystallographic structure and the surface morphology were investigated by using X-ray diffraction and scanning electron microscopy, respectively. The crystallinity of the films was improved with increasing the annealing temperature and the average size of crystalline grains was found to be 50 nm. All the thin films showed an average transmittance of 92% in the wavelength range of 400-1100 nm. As the annealing temperature was increased, the bandgap energy was decreased and the violet photoluminescence (PL) signal at 400 nm replaced the ultraviolet PL signal. The electrical properties of the thin films showed a significant dependence on the annealing temperature.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.8
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• pp.222-227
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• 2020

Pb(Zr,Ti)O₃(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb_1.3(Zr_0.52Ti_0.48)O₃. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm². This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.280-287
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• 1995

첨가제로 $Al_{2}$$O_{3}$가 포함된 ZnO 소결체가 타깃을 이용하여 RF 마그네트론 스퍼터링법으로 Al이 첨가된 ZnO박막을 증착하고, 타깃에 첨가된 $Al_{2}$$O_{3}$의 농도와 증착시 스퍼터링장치내의 기판위치에 따른 박막의 물성 변화를 고찰하였다. 타깃의 $Al_{2}$$O_{3}$ 첨가농도가 2wt%인 경우에 비저항치 8 $\times$ $10_{-3}$ $\Omega$-cm인 박막이 증차되었다. 또한 $Al_{2}$$O_{3}$가 2wt%이상 첨가된 경우는 모든 Al이 박막내부에서 Zn를 치환하여 전자주게로의 역할을 하지 못하고, 오히려 치환되지 못한 Al원자의 중성 불순물 산란효과에 의해 박막의 비저항이 증가하였다. 타깃의 마모영역 위에서 증착된 Al을 첨가한 ZnO 박막은 그 영역 KR에서 증착된 박막보다 높은 비저항값을 나타냈으며, 이는 큰 에너지를 가지는 산소입자의 충돌에 기인한 것으로 여겨진다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.205-206
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• 2012

$InSbO_4$ (Indium antimony oxide) 박막을 RF 마그네트론 스퍼터링법을 이용하여 $SiO_2$가 코팅된 Si wafer ($SiO_2/Si$) 기판 또는 $400^{\circ}C$에서 융해된 석영 유리 (silica glass) 기판 위에 증착시켰다. 고결정성과 화학양론의 $InSbO_4$ 막을 증착시키기에 최적화된 조성의 $In_{0.2x}Sb_{0.3x}O_x$ 타겟을 이용하여 Ar과 $O_2$ 혼합 가스 분위기에서 스퍼터링 증착을 수행하였다. $InSbO_4$ 막은 가시광 영역에서 80%이상의 투과도를 보였고, $400^{\circ}C$에서 $1100^{\circ}C$사이의 어닐링 온도에서는 $InSbO_4$ 막의 전기적 성질이 높은 고온 내구성을 가지는 것을 알 수 있었다. 그러나 $1200^{\circ}C$ 이상의 어닐링 온도에서는 새로운 $Sb_2O_4$ 상의 분리로 인해 $InSbO_4$ 막의 비저항이 급격히 증가하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.886-887
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• 2011

To obtain a transparent electrode, AZO thin film was deposited on SiOC film with various flow rates by rf magnetron sputtering system. SiOC film was deposited with various DMDMOS/O2 flow rate ratio by CVD, The optical electrical properties of the SiOC film and SiOC/AZO were analyzed by the uv visible spectrometer and 4 point prove system. The reflectance of SiOC/AZO film was changed in compared with that of SiOC film. The resistance was decreased with low RF power because of increasing the concentration of carriers.