• Title/Summary/Keyword: RF/MM Wave

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Balanced RF Duplexer with Low Interference Using Hybrid BAW Resonators for LTE Application

  • Shin, Jea-Shik;Song, Insang;Kim, Chul-Soo;Lee, Moon-Chul;Son, Sang Uk;Kim, Duck-Hwan;Park, Ho-Soo;Hwang, Sungwoo;Rieh, Jae-Sung
    • ETRI Journal
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    • v.36 no.2
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    • pp.317-320
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    • 2014
  • A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

Fabrication of AlGaAs/InGaAs/GaAs Pseudomorphic HEMT's for mm waves. (mm파 AlGaAs/InGaAs/GaAs Power PM-HEMT 제작 연구)

  • 이성대;허종곤이일형이진구
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.633-636
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    • 1998
  • In this study, power AlGaAs/InGaAs/GaAs PM-HEMT's for mm wave's were fabricated using Electron beam lithography and air-bridge techniques, and so on. DC and AC characteristics of the fabricated power PM-HEMTs were measured under the various bias conditions. For example, DC and RF characteristics such as S21 gain of 3.6 dB at 35 ㎓, current gain cut-off frequencies of 45 ㎓ and maximum oscillation frequencies of 100 ㎓ were carefully analyzed for design methodology of sub-mm wave power devices.

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The low conversion loss and low LO power V-band MIMIC Up-mixer (낮은 LO 입력 및 변환손실 특성을 갖는 V-band MIMIC Up-mixer)

  • Lee Sang Jin;Ko Du Hyun;Jin Jin Man;An Dan;Lee Mun Kyo;Cho Chang Shik;Lim Byeong Ok;Chae Yeon Sik;Park Hyung Moo;Rhee Jin Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.12
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    • pp.103-108
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    • 2004
  • In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

Fabrications of Low Conversion Loss and High LO-RF Isolation 94 GHz Resistive Mixer (낮은 변환손실과 높은 LO-RF 격리도 특성을 갖는 94 GHz Resistive Mixer 의 제작)

  • Lee, Bok-Hyung;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.921-924
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    • 2005
  • We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

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A Metasurface Improving the Fixed Function of a Ready-Made mm-Wave Antenna Module (밀리미터파 안테나 모듈 기성품의 고착화된 기능을 향상시키는 메타 재질 표면)

  • Jaewon Koh;Seongbu Seo;Yejune Seo;Sungtek Kahng
    • Journal of Advanced Navigation Technology
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    • v.28 no.2
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    • pp.225-231
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    • 2024
  • In this article, a new approach is presented to improve the unchangeable function of a ready-made millimeter-wave antenna system. By designing a metamaterial surface appropriate for the given geometry and fixed electrical characteristics of the device, the properties of the radiated fields of the RF product are changed to have directivity and higher antenna gain. Unlike other designs using periodic metamaterials for a single patch, an aperiodic metasurface is developed to handle two patches. For a higher received signal strength and a longer RF path in the 24 GHz-radio link, an aperiodic metasurface enhances the radiated fields by 10 dB.

Low Conversion Loss 94 GHz MHEMT MIMIC Resistive Mixer (낮은 변환손실 특성의 94 GHz MHEMT MIMIC Resistive 믹서)

  • An Dan;Lee Bok-Hyung;Lim Byeong-Ok;Lee Mun-Kyo;Oh Jung-Hun;Baek Yong-Hyun;Kim Sung-Chan;Park Jung-Dong;Shin Dong-Hoon;Park Hyung-Moo;Park Hyun-Chang;Kim Sam-Dong;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.5 s.335
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    • pp.61-68
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    • 2005
  • In this paper, low conversion loss 94 GHz MIMIC resistive mixer was designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC's, was fabricated. The DC characteristics of MHEMT are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 189 GHz and the maximum oscillation frequency(fmax) is 334 GHz. A 94 GHz resistive mixer was fabricated using $0.1{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the 94 GHz resistive mixer was 8.2 dB at an LO power of 10 dBm. P1 dB(1 dB compression point) of input and output were 9 dBm and 0 dBm, respectively. LO-RF isolations of resistive mixer was obtained 15.6 dB at 94.03 GHz. We obtained in this study a lower conversion loss compared to some other resistive mixers in W-band frequencies.

77-GHz mmWave antenna array on liquid crystal polymer for automotive radar and RF front-end module

  • Kim, Sangkil;Rida, Amin;Lakafosis, Vasileios;Nikolaou, Symeon;Tentzeris, Manos M.
    • ETRI Journal
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    • v.41 no.2
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    • pp.262-269
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    • 2019
  • This paper introduces a low-cost, high-performance mmWave antenna array module at 77 GHz. Conventional waveguide transitions have been replaced by 3D CPW-microstrip transitions which are much simpler to realize. They are compatible with low-cost substrate fabrication processes, allowing easy integration of ICs in 3D multi-chip modules. An antenna array is designed and implemented using multilayer coupled-fed patch antenna technology. The proposed $16{\times}16$ array antenna has a fractional bandwidth of 8.4% (6.5 GHz) and a 23.6-dBi realized gain at 77 GHz.

40 GHz Vertical Transition with a Dual-Mode Cavity for a Low-Temperature Co-fired Ceramic Transceiver Module

  • Byun, Woo-Jin;Kim, Bong-Su;Kim, Kwang-Seon;Eun, Ki-Chan;Song, Myung-Sun;Kulke, Reinhard;Kersten, Olaf;Mollenbeck, Gregor;Rittweger, Matthias
    • ETRI Journal
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    • v.32 no.2
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    • pp.195-203
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    • 2010
  • A new vertical transition between a substrate integrated waveguide in a low-temperature co-fired ceramic substrate and an air-filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air-filled waveguide. Physical characteristics of an air-filled WR-22 to WR-22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a -1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back-to-back module. A 40 GHz low-temperature co-fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm ${\times}$ 28 mm ${\times}$ 3.3 mm.

Wireless Gap Sensor Based on Surface Acoustic Wave Device (표면 탄성파 장치에 기반한 무선 간극 센서)

  • Kim, Jae-Geun;Park, Kyoung-Soo;Park, No-Cheol;Park, Young-Pil;Lee, Taek-Joo;Lim, Soo-Cheol;Ohm, Won-Suk
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.21 no.3
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    • pp.206-211
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    • 2011
  • In this paper, we report a high-precision wireless gap sensor based on a surface acoustic wave (SAW) device. The sensing element is a parallel-plate capacitor whose dimensions are $3{\times}3\;mm^2$, and is attached to the SAW device as an external load. The SAW device, equipped with an RF antenna, serves simultaneously as a signal conditioner and an RF transponder. The center frequency of the SAW device is 450 MHz. The wireless gap sensor prototype exhibits a resolution of 100 nm and a sensing range of $50{\mu}m$. The proposed sensor system can be used for remote, high-precision gap measurement in hard-to-reach environments.