• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.497-501
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• 2004

The crystal structure of the GaN film on the AIN buffer layer grown by R. F sputtering with different thickness has been studied using X-ray scattering and transmission electron microscopy(TEM). The interface roughness between the AIN buffer layer and the epitaxial GaN film, due to crossover from planar to island grains, produced edge dislocations. The strain, coming from lattice mismatch between the AIN buffer layer and the epitaxial GaN film, produced screw dislocations. The density of the edge and screw dislocation propagating from the interface between the GaN film and the AIN buffer layer affected the electric resistance of GaN film.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1999년도 제2회 총회 및 춘계학술발표회
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• pp.71-71
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• 1999

• 한국진공학회지
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• 제16권3호
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• pp.215-220
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• 2007

[ $Pt/SBT/Seed/Pt/Ti/SiO_2/Si$ ]의 구조로 $SBT(SrBi_2Ta_2O_9)$ 박막을 Self-seed layer를 사용하여 R.F. Magnetron sputter를 이용하여 증착을 하였다. Self-seed layer는 기판온도 RT(room temperature)와 $600^{\circ}C$에서 두께 30 nm으로 증착하였다. Self-seed layer의 결정화 온도를 알아보기 위해 열처리온도를 변화시켰고 이를 XRD를 통하여 결정화 유무를 확인하였다. Self-seed layer 위에 증착한 SBT를 XRD와 전기적 측정을 통해 특성을 관찰하였다.

• 한국표면공학회지
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• 제32권3호
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• pp.401-405
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• 1999

Reflective silver films with high quality were prepared on polyester substrate by using sputter deposit on techniques. Best reflectivity thin films of silver were produced with process parameters of $10^{-6}$ Torr as base pressure, 50 W as R.F. power, 5 mTorr as working pressure, and 10 sccm as Ar flow rate. Being deposited with an R.F. power of 50 W, Ag films revealed the highest 96.3 % reflectance as illuminated with a light of 700 nm wavelength. The adhesion of sample films showed as high as 14 to $20{\;}kg/\textrm{cm}^2$, which is suitable for industrial purposes. Their film crystallinity and orientation resulted in the planes of (111) and (200) for the growth with a preferred orientation of <111>, in general. The cross-sections of thin film specimens showed columnar structures. It is noted that columns became coarsened and less dense as R.F. power increased, resulting in a low reflectivity for the product film.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.328-331
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• 1995

TiO$_2$thin films for humidity sensors have been deposited by RF magnetron sputter and hygroscopic characteristics were investigated. Grain diameter of thin films were increased and hygroscopic characteristics were good as discharge power. Hygroscopic characteristics of thin films heated for 15 min at 500$^{\circ}C$ were better and more linear than that at 400$^{\circ}C$ and were unchanged as Ar flow rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.113-113
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.114-114
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• 2008

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.322-327
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• 2006

CdS films have been prepared on polycarbonate, polyethylene terephthalate, and Coming 7059 substrates by r.f magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated. The XRD measurements revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase, regardless of substrate types. As the sputter power was increased from 75 to 150 Watt, the structure of CdS films was converted from the mixed of hexagonal and cubic phase to hexagonal phase. The morphology of CdS films is found to be continuous and dense. Also, the grain of CdS films is larger with increasing the sputter power. The average transmittance exceeded 80 % in the visible spectrum for all films and decreases slightly with the sputter power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.334.1-334.1
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• 2014

태양전지, 터치센서와 같이 투명한 전극(TCO: Transparent conducting oxide)이 필요로 하는 곳에는 금속 산화물 형태의 ITO, ZnO, FTO와 같은 투명 전극이 사용된다. 그중에서 FTO는 저렴한 가격과 높은 투과율, 낮은 저항으로 주목을 받고 있다. 뿐만아니라 FTO 박막은 다른 산화물 전도체에 비해 구부림에 강한 저항성을 보여 주고 있다. FTO 박막의 캐리어 전하 생성 원리는 F 원자가 O 원자의 자리를 치환하게 되면서 잉여 전자의 발생으로 전기가 흐를 수 있다. 아직까지는 화학적 조성비에 유리한 CVD를 이용한 증착 방법이 많이 사용되고 있다. 스퍼터 장비 역시 공정 가스에 따라 화학적 조성비 변화가 가능하고 CVD와 비교하여 공정이 간단하며 연속 공정이 쉽고 대면적 적용이 가능하다. 본 실험은 본사에서 R&D용으로 제작한 Daon-1000 S 장비를 사용하였으며 DaON-1000 S는 3개의 2" sputter gun이 장착 되어 있어 co-sputtering이 가능한 장비이다.