• 전기학회논문지
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• 제57권5호
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• pp.858-865
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• 2008

In this paper, Capacitive Telemetry RF Sensor System using Recursive Least Square (RLS) algorithm was proposed. General Telemetry RF Sensor System means that it should be "wireless", "implantable" and "batterless". Conventional Telemetry RF Sensor System adopts Integrated Circuit type, but there are many defects like complexity of structure and the limitation of large power consumption in some cases. In order to overcome these disadvantages, Telemetry RF Sensor System based on inductive coupling principle was proposed in this paper. Proposed Telemetry RF Sensor System is very simple because it consists of R, L and C and measures the changes of environment like pressure and humidity in the type of capacitive value. This system adopted RLS algorithm for estimation of this capacitive parameter. For the purpose of applying RLS algorithm, proposed system was mathematically modelled with phasor method and was quasi-linearized. As two parameters such as phase and amplitude of output voltage for estimation were needed, Phase Difference Detector and Amplitude Detector were proposed respectively which were implemented using TMS320C2812 made by Texas Instrument. Finally, It is verified that the capacitance of proposed telemetry RF Sensor System using RLS algorithm can be estimated efficiently under noisy environment.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.106-110
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• 1998

The $LiNbO_3$ thin films were prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. RTA(Rapid Thermal Annealing) treatment was performed for as-deposited films in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric $LiNbO_3$ film was increased from a typical value of $1{\sim}2{\times}10^8{\Omega}{\cdot}cm$ before the annealing to about $1{\times}10^{13}{\Omega}{\cdot}cm$ at 500 kV/cm and reduced the interface state density of the $LiNbO_3/Si$ (100) interface to about $1{\times}10^{11}/cm^2{\cdot}eV$. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization ($P_r$) and coercive field ($E_c$) values of about 1.2 ${\mu}C/cm^2$ and 120 kV/cm, respectively.

• International Journal of Air-Conditioning and Refrigeration
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• 제13권2호
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• pp.107-118
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• 2005

An experimental investigation was made to study two-phase flow distribution in a T-type distributor of slit fin-and-tube heat exchanger using R-22. Experiments were carried out under the conditions of saturation temperature of $5^{\circ}C$ and mass flow rate varying from 0.6 to 1.2kg/min. The inlet air has dry bulb temperature of $27^{\circ}C$, relative humidity of 50% and air velocity varying from 0.63 to 1.71m/s. A comparison was made between the predictions from the previously proposed tube-by-tube method and the present experimental data for the heat transfer rate of evaporator. Results show that $82.5\%$ increase of air velocity is needed for T-type distributor with four outlet branches than that of two outlet branches under the superheat of $5^{\circ}C$, which resulted in increasing of air-side pressure drop of $130\%$ for the former as compared to the latter.

• 대한전자공학회논문지
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• 제22권4호
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• pp.76-83
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• 1985

RMOS(refractory metal oxide semiconductor)의 게이트와 집적회로의 각 소자나 회로를 연결하는 연결선으로 사용되는 Mo2N/Mo 이중층을 Ar과 N2의 혼합가스 분위기에서 저온의 고주파 반응성스펏터링으로 형성하였다. 1000Å-Mo2N/4000Å-Mo이중층의 면저항은 약 1.20∼1.28Ω/구로서 다결정실리콘의 약 1/10정도가 되었다. C-V측정으로부터 Mo2N/Mo이중층과 비저항이 6∼9Ω·㎝이고 결정면이 (100)인 P형 Si과의 일함수차 f%5는 약 -0.30ev 및 산화층에 존재하는 고정전하밀도 Qss/q는 약 2.1x1011/cm를 얻었다. 인버터 한개당의 신호전달 지연시간을 측정하기 위해 다결정실리콘게이트 NMOS 제조공정을 웅용하여 45개의 인버터로 구성된 ring oscillator를 제작하였다. 본 실험에서 얻을 수 있었던 인버터 한개에 대한 신호전달지연시간은 약 0.8nsec였다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 추계학술발표대회 개요집
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• pp.228-230
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• 2005

Sn-8wt%Zn-3wt%Bi (이하, Sn-8Zn-3Bi) 솔더의 장기 신뢰성을 평가하기 위하여 고용고습시험을 행하였다. 고온 고습 시험은 $85^{\circ}C$/85RH 조건에서 1000 시간 동안 하였다. 접합 기판으로는 각각 OSP (Organic Solderability Preservative), Sn 그리고 Ni/Au 처리를 한 PCB(Printed Circuit Board) 패드를 사용하였다. 접합에 사용한 부품은 1608Chip 으로 MLCC(Multi Layer Ceramic Capacitor 이하, 1608C) 와 Chip Resister(이하, 1608R)을 사용하였으며, 이 두 부품의 전극부위에 Sn-10wt%Pb(이하 Sn-l0PB), Sn을 각각 도금하였다. 솔더링 후 1608C 와 1608R의 전단 접합 강도와 솔더링부에서 Zn상의 변화를 관찰하였다. 측정결과, Sn-8Zn-3Bi 솔더의 초기 전단 접합 강도는 기판의 표면처리에 상관없이 약 40N 이었다. 그러나 고온 고습 시험 1000 시간 후에는 기판의 표면처리에 상관없이 약 30N 까지 감소하였다. 하지만 이는 reference인 Sn-37Pb 솔더의 강도값과 거의 유사하며, 이는 Sn-8Bi-3Zn 솔더의 고온 고습 시험 후 전단강도 특성은 기존 유연솔더와 비교하여 동등이상이라고 평가할 수 있다.

• 한국재료학회지
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• 제29권5호
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• 전기화학회지
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• 제10권3호
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• pp.179-183
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• 2007

The corrosion behavior of metal covered with mortar under a wet-dry cyclic condition were investigated to apply for the measurement of corrosion rates of reinforcing steel in concrete structure. The carbon steel in mortar having t=3 mm cover thickness was exposed to the alternate condition of 6 h immersion in chloride containing solution and 18 h drying at $25^{\circ}C$ and 50%RH. The electrochemical phenomena of a carbon steel and mortar interface was explained by an equivalent circuit consisting of a solution resistance, a charge transfer resistance and a CPE(Constant Phase Element). The corrosion rates were monitored continuously during exposure using an AC impedance technique. Simultaneously, the current distribution over the working electrode during impedance measurement was analyzed from the phase shift, $\theta$, in an intermediate frequency. The result showed that corrosion rate monitoring using an AC impedance method is suitable under the given exposure conditions even during the drying period when the metal is covered with the wetted mortar.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.408-409
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• 2015

한국전력공사에서는 2015년 4월말 기준 808개의 변전소를 운전 중에 있다. 변압기 용량으로 보면 299,734MVA에 달하고 있으며, 매년 증가하는 전력수요에 맞추어 신규 변전소 건설과 더불어 변전설비가 계속하여 확충되고 있다. 또한, 계절별 및 시간대별 부하변동에 따른 변전소 모선의 전압변동에 대응하기 위하여 Sh.C(Shunt Condenser), Sh.R(Shunt Reactor), SVC(Static Var Compensator) 등 다양한 무효전력보상 및 조절 설비들이 지속적으로 설치되고 있다. 이들 무효전력보상 설비들은 주로 변전소 모선에 전용 차단기를 통하여 연결되어 운전되고 있으며, 전용 차단기는 매일 시간대별 부하변동에 대응하여 개폐빈도가 많은 다빈도 차단기로서 잦은 개폐조작에 따른 내구성이 필요하며 변전소 모선전압을 기준전압 범위 이내로 안정적으로 유지하기 위한 신뢰성이 요구되고 있다. 본 논문에서는 345kV Sh.R 개폐용 동일유형의 345kV 50kA 1점절 다빈도 차단기에서 차단조작시 발생한 차단부 절연파괴 고장의 원인을 분석하고 재발방지를 위한 대책에 대하여 논하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권4호
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• pp.307-311
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• 2004

This paper presents an efficient architecture that optimizes the design of SEED S-box using composite field arithmetic. SEED is the Korean standard 128-bit block cipher algorithm developed by Korea Information Security Agency. The nonlinear function S-box is the most costly operation in terms. of size and power consumption, taking up more than 30% of the entire SEED circuit. Therefore the S-box design can become a crucial factor when implemented in systems where resources are limited such as smart cards. In this paper, we transform elements in $GF(2^8)$ to composite field $GF(((2^2)^2)^2)$ where more efficient computations can be implemented and transform the computed result back to $GF(2^8)$. This technique reduces the S-box portion to 15% and the entire SEED algorithm can be implemented at 8,700 gates using Samsung smart card CMOS technology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.323-325
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• 1990

In this paper, a new method to track the maximum power point is presented. The proposed scheme achieves the maximum power the step-up chopper, which tracks the maximum power point by sensing only the actual current from the photovoltaic array. Also it adopts the protect ion circuit to protect the battery system against the overvoltage and overvoltage by utilizing hysterisis characteristic.