• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.12
• /
• pp.2199-2201
• /
• 2008

Sulfur hexafluoride($SF_6$) is a gaseous dielectric used in high voltage electrical equipment such as an insultor or arc quenching medium in the transmission and distribution of electricity. however, $SF_6$ is one of the greenhouse gases(GHG) with a global warming potential that is 23,900 times greater than that of carbon dioxide($CO_2$). for this reason, $SF_6$ emissions in electric equipment shall be controlled to reduce GHG and improve cost-effective use of $SF_6$ for economical benefits. Until recently there has not been any investigation on $SF_6$ emission characteristics and inventory in Korea. To understand emission characteristics during the use-phase, the scope of this study was limited to the following closed pressure system equipment from 10 substations in Korea. This study highlights (1) the investigation of sampling/analysis methodology for $SF_6$ emissions in high voltage equipment, (2) the estimation of $SF_6$ emissions in the use-phase, and (3) the comparison between the emission ratio and the mass-balance applied to inventory study. According to this study, the majority of emissions were related to electric equipment nameplates and the rest of the emissions were related to the handling of $SF_6$ during operations. from this result, emission ratios estimated from this study were similar; GIS was 14% and GCB was 13%, as maintenance process conditions were the same as manual process conditions for both equipment.

• Current Optics and Photonics
• /
• v.6 no.6
• /
• pp.521-549
• /
• 2022

Fiber lasers have made remarkable progress over the past three decades, and they now serve far-reaching applications and have even become indispensable in many technology sectors. As there is an insatiable appetite for improved performance, whether relating to enhanced spatio-temporal stability, spectral and noise characteristics, or ever-higher power and brightness, thermal management in these systems becomes increasingly critical. Active convective cooling, such as through flowing water, while highly effective, has its own set of drawbacks and limitations. To overcome them, other synergistic approaches are being adopted that mitigate the sources of heating at their roots, including the quantum defect, concentration quenching, and impurity absorption. Here, these optical methods for thermal management are briefly reviewed and discussed. Their main philosophy is to carefully select both the lasing and pumping wavelengths to moderate, and sometimes reverse, the amount of heat that is generated inside the laser gain medium. First, the sources of heating in fiber lasers are discussed and placed in the context of modern fiber fabrication methods. Next, common methods to measure the temperature of active fibers during laser operation are outlined. Approaches to reduce the quantum defect, including tandem-pumped and short-wavelength lasers, are then reviewed. Finally, newer approaches that annihilate phonons and actually cool the fiber laser below ambient, including radiation-balanced and excitation-balanced fiber lasers, are examined. These solutions, and others yet undetermined, especially the latter, may prove to be a driving force behind a next generation of ultra-high-power and/or ultra-stable laser systems.

• The Korean Journal of Physiology and Pharmacology
• /
• v.22 no.2
• /
• pp.215-223
• /
• 2018

Intracellular $Ca^{2+}$ mobilization is closely linked with the initiation of salivary secretion in parotid acinar cells. Reactive oxygen species (ROS) are known to be related to a variety of oxidative stress-induced cellular disorders and believed to be involved in salivary impairments. In this study, we investigated the underlying mechanism of hydrogen peroxide ($H_2O_2$) on cytosolic $Ca^{2+}$ accumulation in mouse parotid acinar cells. Intracellular $Ca^{2+}$ levels were slowly elevated when $1mM\;H_2O_2$ was perfused in the presence of normal extracellular $Ca^{2+}$. In a $Ca^{2+}-free$ medium, $1mM\;H_2O_2$ still enhanced the intracellular $Ca^{2+}$ level. $Ca^{2+}$ entry tested using manganese quenching technique was not affected by perfusion of $1mM\;H_2O_2$. On the other hand, $10mM\;H_2O_2$ induced more rapid $Ca^{2+}$ accumulation and facilitated $Ca^{2+}$ entry from extracellular fluid. $Ca^{2+}$ refill into intracellular $Ca^{2+}$ store and inositol 1,4,5-trisphosphate ($1{\mu}M$)-induced $Ca^{2+}$ release from $Ca^{2+}$ store was not affected by $1mM\;H_2O_2$ in permeabilized cells. $Ca^{2+}$ efflux through plasma membrane $Ca^{2+}-ATPase$ (PMCA) was markedly blocked by $1mM\;H_2O_2$ in thapsigargin-treated intact acinar cells. Antioxidants, either catalase or dithiothreitol, completely protected $H_2O_2-induced$ $Ca^{2+}$ accumulation through PMCA inactivation. From the above results, we suggest that excessive production of $H_2O_2$ under pathological conditions may lead to cytosolic $Ca^{2+}$ accumulation and that the primary mechanism of $H_2O_2-induced$ $Ca^{2+}$ accumulation is likely to inhibit $Ca^{2+}$ efflux through PMCA rather than mobilize $Ca^{2+}$ ions from extracellular medium or intracellular stores in mouse parotid acinar cells.

• Journal of the Korean Vacuum Society
• /
• v.14 no.2
• /
• pp.78-83
• /
• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.