• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.2
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• pp.53-58
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• 2006

When external field was applied to congruent $LiNbO_3$, it was investgated for domain formation and expansion of $LiNbO_3$. The domain wall velocities of 0.5 mm thickness $LiNbO_3$ were 28.70, 16.02 and $5.75{\mu}m/sec$ under poling field of 23.5, 22.0 and 21.0 kV/mm, respectively. As $1 M{\Omega}$ resistor was used in domain inversion system, harmonic domain inversion was not achieved by rapid domain expansion. And 50% duty cycle periodically poled $LiNbO_3$ have been fabricated by charge control using $10 M{\Omega}$ resistor.

• Laser Solutions
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• v.16 no.4
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• pp.1-6
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• 2013

Femtosecond laser patterning of ITO on a touch screen panel with a shaped fs laser beam was investigated. A quasi flat-top beam was formed using a variable mask and a planoconvex lens. The spatial profile of the original Gaussian beam and the shaped beam were monitored by a CCD beam profiler. The laser patterned ITO film was examined using an optical microscope, Scanning Electron Microscope (SEM) with Energy Dispersive X-ray Spectroscopy (EDS), and Atomic Force Microscope (AFM). It turned out that the quality of the ITO pattern fabricated by a shaped beam is superior to that of the pattern without beam shaping in terms of debris generation, height of the craters, and homogeneity of the bottom. Optimum processing window was determined at the laser irradiance exhibiting 100% removal of Sn. The removal rate of In was measured to be 83%.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.396-400
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• 2003

A new synthesis process for nano laminating Ti$_3$SiC$_2$ has been developed using TiCx (x=0.67) and Si powder as starting materials by a reaction hot pressing. Bulk Ti$_3$SiC$_2$ was fabricated using a green body consisting of TiCx and Si by a hot pressing under the pressures of 25 MPa at 1420-1550 $^{\circ}C$ for 90 min. The synthesized Ti$_3$SiC$_2$ was consisting of only TiCx and Ti$_3$SiC$_2$. The relative density of sintered bulk Ti$_3$SiC$_2$ was increased as the hot pressing temperature was increased, which was mainly due to the increase in TiCx contents in synthesized Ti$_3$SiC$_2$. The synthesized Ti$_3$SiC$_2$ bulk was consisted of nano sized lamella structure of 20-100 nm in thickness. It was found that TiCx particles in Ti$_3$SiC$_2$ would increase the 3-point bending strength of synthesized Ti$_3$SiC$_2$ bulk. The maximum 3-P. bending strength of synthesized Ti$_3$SiC$_2$ bulk was more than 800 MPa. The Vickers hardness of synthesized Ti$_3$SiC$_2$bulk was as low as 5 Gpa, which was decreased with the indentation load. The quasi-plastic deformation behaviors were observed around indentation mark on Ti$_3$SiC$_2$.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.8-13
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• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.

• Advances in nano research
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• v.7 no.3
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• pp.191-208
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• 2019

In the present work the dynamic analysis of the functionally graded rectangular nanoplates is studied. The theory of nonlocal elasticity based on the quasi 3D high shear deformation theory (quasi 3D HSDT) has been employed to determine the natural frequencies of the nanosize FG plate. In HSDT a cubic function is employed in terms of thickness coordinate to introduce the influence of transverse shear deformation and stretching thickness. The theory of nonlocal elasticity is utilized to examine the impact of the small scale on the natural frequency of the FG rectangular nanoplate. The equations of motion are deduced by implementing Hamilton's principle. To demonstrate the accuracy of the proposed method, the calculated results in specific cases are compared and examined with available results in the literature and a good agreement is observed. Finally, the influence of the various parameters such as the nonlocal coefficient, the material indexes, the aspect ratio, and the thickness to length ratio on the dynamic properties of the FG nanoplates is illustrated and discussed in detail.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.05a
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• pp.143-143
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• 2014

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.86-93
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• 2017

In this paper, we propose a novel defect detection method using component tree representations of scanning electron microscopy (SEM) images. The component tree contains rich information about the topological structure of images such as the stiffness of intensity changes, area, and volume of the lobes. This information can be used effectively in detecting suspicious defect areas. A quasi-linear algorithm is available for constructing the component tree and computing these attributes. In this paper, we modify the original component tree algorithm to be suitable for our defect detection application. First, we exclude pixels that are near the ground level during the initial stage of component tree construction. Next, we detect significant lobes based on multiple attributes and edge information. Our experiments performed with actual SEM wafer images show promising results. For a $1000{\times}1000$ image, the proposed algorithm performed the whole process in 1.36 seconds.

• Advances in nano research
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• v.7 no.4
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• pp.223-231
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• 2019

In this article the frequency response of magneto-flexo-electric rotary porous (MFERP) nanobeams subjected to thermal loads has been investigated through nonlocal strain gradient elasticity theory. A quasi-3D beam model beam theory is used for the expositions of the displacement components. With the aid of Hamilton's principle, the governing equations of MFERP nanobeams are obtained. Further, administrating an analytical solution the frequency problem of MFERP nanobeams are solved. In addition the numerical examples are also provided to evaluate the effect of nonlocal strain gradient parameter, hygro thermo environment, flexoelectric effect, in-plane magnet field, volume fraction of porosity and angular velocity on the dimensionless eigen frequency.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.149-153
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• 2012

Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 ℃ and 450 ℃, respectively. A vacuum annealing of those films at 800 ℃ for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.361.1-361.1
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• 2016

Due to their high sensitivity, fast response, small energy consumption and ease of integration, nanoelectromechanical systems (NEMS) have attracted much interest in various applications such as high speed memory devices, energy harvesting devices, frequency tunable RF receivers, and ultra sensitive mass sensors. Since the device performance of NEMS is closely related with the mechanical and flexural properties of the material in NEMS, analysis of the mechanical and flexural properties such as intrinsic tensile stress and Young's modulus is a crucial factor for designing the NEMS structures. In the present work, the intrinsic mechanical properties of highly stressed silicon nitride (SiN) beams are investigated as a function of the beam length using two different techniques: (i) dynamic flexural measurement using optical interferometry and (ii) quasi-static flexural measurement using atomic force microscopy. The reliability of the results is analysed by comparing the results from the two different measurement techniques. In addition, the mass density, Young's modulus and internal stress of the SiN beams are estimated by combining the techniques, and the prospect of SiN based NEMS for application in high sensitive mass sensors is discussed.