• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.717-722
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• 2003

The structure, force field and vibrational spectra of triphenylene are studied by $B3LYP/6-31G^*$(5d) level of theory. The results are compared to those of the related system, phenanthrene. The scale factors in nonredundant local coordinates obtained after fitting the DFT frequencies to the experimental numbers of phenanthrene-$d_0 and -d_{10}$ are transferred to predict the spectra and assignment of triphenylene for in-plane modes. The frequencies based on scaling methodology due to Lee et al. are also obtained. These frequencies are compared with the predicted numbers based on scale factors from phenanthrene. Probable assignment for out-of-plane modes is proposed based on simple scaling of Scott and Radom (scale factor 0.9614) as well as by scaling methodology by Lee et al.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.201-203
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• 2000

To improve characteristics of optical devices that used be WDM system optimally, we investigated characteristics of two types structures that consisted of non-uniform thickness Quantum well. They have high characteristic temperature and 3dB bandwidth of spontaneous emission are 57nm, 50nm respectively, which are 1.4times, 1.3times wider than conventional structure.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.541-544
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• 1998

A SiGe p-channel MESFET using $\delta-doped$ layers is designed and the considerable enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta-doped$ layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes inthe spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of $0~300\AA$ and the Ge composition of 0~30% are investigated, and the saturation current is observed to be increased by 45% compared with a double $\delta-doped$ Si p-channel MESFET.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.44-47
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• 2003

There are several simulation programs in studying superconductor RSFQ (Rapid Single flux Quantum) electronic devices, which include WRspice, WinS, PSCAN, and JSIM. Even though different research groups use different simulation programs, it is not well known about which program gives the simulation results closer to the measurement values. In this work, we used both WRspice and WinS to simulate RSFQ OR gate and to compare the results from the different simulations. This comparison would help in deciding which program is better in the RSFQ circuit design. In the confluence buffer, which is the one of the main components of the DR gate, the measured bias margins were ${\times}23.2%$, while the margins from the simulations were ${\pm}35.56%$ from WRspice and it 53.1% from WinS. However, with the actual fabricated circuit parameters WRspice gave ${\pm}27%$. In WinS the circuit did not operate. We concluded that WRspice is more reliable.

• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.293-297
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• 2012

CsI:Gd crystal was grown by the Bridgeman method and its scintillation properties were investigated. The wavelength peak of the luminescence spectrum for the crystal excited by X-ray was 419 nm. The range of the spectrum was from 300 nm to 800 nm. The spectrum well matched to the quantum efficiency of a typical bi-alkali photo-multiplier tube(PMT). An energy resolution of 48.2 % was obtained for 662 keV ${\gamma}$-rays of $^{137}Cs$. The three decay times were obtained as a fast(557.4 ns, 42.2 %), intermediate (1.78 ${\mu}s$, 29.7 %) and slow (5.43 ${\mu}s$, 28.1 %) components, respectively.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2008.11a
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• pp.668-669
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• 2008

In this paper, we introduce various coarse-grained elastic network modeling (ENM) techniques as a novel computational method for simulating atomic scale dynamics in macromolecules including DNA, RNA, protein, and polymer. In ENM, a system is modeled as a spring network among representative atoms in which each linear elastic spring is well designed to replace both bonded and nonbonded interactions among atoms in the sense of quantum mechanics. Based on this simplified system, a harmonic Hookean potential is defined and used for not only calculating intrinsic vibration modes of a given system, but also predicting its anharmonic conformational change, both of which are strongly related with its functional features. Various nano and bio applications of ENM such as fracture mechanics of nanocomposite and protein dynamics show that ENM is one of promising tools for simulating atomic scale dynamics in a more effective and efficient way comparing to the traditional molecular dynamics simulation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1260-1262
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• 1992

We have developed an optical switch array, which consists of 16X8 reflective symmetric self electrooptic effect devices(RS-SEED), from MOCVD-grown GaAs/AlGaAs low-barrier(LB) multiple quantum well (MQW) structures.

• Journal of Advanced Marine Engineering and Technology
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• v.27 no.1
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• pp.33-41
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• 2003

The optical properties of $ZnS_ySe_{1-\chi-y}:Te_{\chi}(\chi<0.08,y~0.11)$ alloys grown by molecular beam epitaxy (MBE) have been investigated by photoluminescence (PL) and PL-excitation (PLE) spectroscopy. Good optical properties and high crystal quality were established with lattice match condition to GaAs substrate. At room temperature, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSSe:Te alloy. The efficient blue and green emission were assigned to $Te_1 and Te_n(n\geq2)$cluster bound excitons, respectively. Bright green (535 nm) and blue (462 nm) light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The turn-on voltage of 2.1 V in current-voltage characteristics is very small compared to that of commercial InGaN-based LEDs (>3.4 V), indicating the formation of a good ohmic contact due to the optimized p-ZnSe/p-ZnTe multi-quantum well (MQW) superlattice electrode layers.

• Journal of the Korean Magnetic Resonance Society
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• v.7 no.1
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• pp.16-24
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• 2003

Nuclei with the spin quantum number not smaller than unity have not only the nuclear magnetic moment but also the electric quadrupole moment. The quadrupole moment couples with the electric field gradient (EFG) to produce the nuclear quadrupole interaction. It is well known that two independent parameters, i.e. the quadrupole coupling constant (QCC) and the asymmetry parameter ($\eta$) together with the principal axis directions can fully describe the interaction and are very sensitive to the local symmetry and structure of the solid. In order to obtain quantitative estimates of the EFG tensor for various simple ionic configurations surrounding the nucleus under consideration, we employ the simple point charge approximation and apply the calculated results to some real crystals. General agreement is rather satisfactory.