• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.183-186
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• 2013

Well defined 1-dimentional (1-D) photonic crystals of polystyrene replicas have been successfully obtained by removing the porous silicon from the free-standing rugate porous silicon/phenylmethylpolysiloxane composite film. Rugate porous silicon was prepared by an electrochemical etching of silicon wafer in HF/ethanol mixture solution. Exfoliated rugate porous silicon was obtained by an electropolishing condition. A composite of rugate porous silicon/phenylmethylpolysiloxane composite film was prepared by casting a toluene solution of phenylmethylpolysiloxane onto the top of rugate porous silicon film. After the removal of the template by chemical dissolution, the phenylmethylpolysiloxane castings replicate the photonic features and the nanostructure of the master. The photonic phenylmethylpolysiloxane replicas are robust and flexible in ambient condition and exhibit an excellent reflectivity in their reflective spectra. The photonic band gaps of replicas are narrower than that of typical semiconductor quantum dots.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.54-55
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• 2001

Recently, there has been much interests in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes [1]. Their ultrafast and physical properties are also of significant interests. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs [2]. In this study, we have peformed femtosecond pump-probe experiments in the reflection geometry on 5 periods InGaN/GaN MQW LED structure with well width of 20$\AA$ and barrier width of 100$\AA$ at room temperature. (omitted)

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.36-39
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• 2003

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.915-923
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• 1995

The parameters for an empirical net atomic charge calculation method, Modified Partial Equalization of Orbital Electronegativity (MPEOE), were determined for the atoms in organosilicon compounds and zeolites. For the organosilicon family, the empirical parameters were determined by introducing both experimental and ab initio observables as constraints, these are the experimental and ab initio dipole moments, and the ab initio electrostatic potential of the organosilicon molecules. The Mulliken population was also introduced though it is not a quantum mechanical observable. For the parameter optimization of the atoms in the aluminosilicates, the dipole moments and the electrostatic potentials which calculated from the 6-31G** ab initio wave function were used as constraints. The empirically calculated atomic charges of the organosilicons could reproduce both the experimental and the ab inito dipole moments well. The empirical atomic charges of the aluminosilicates could reproduce the ab initio electrostatic potentials well also.

• Bulletin of the Korean Chemical Society
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• v.16 no.5
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• pp.449-453
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• 1995

An exact quantum mechanical theory is employed to treat predissociation process of the $A^2{\Sigma}^+$ state of OH. The widths and positions of the lower (v= 2 and v= 3) rovibrational levels are calculated. Energy shifts of the resonances from the zeroth order (pure Hund'scase (b)) positions are shown to be small for N $\leq$ 10, indicating that the $A^2{\Sigma}^+$ state can be described as case (b) very well for low N. Due to the differential interactions of the $A^2{\Sigma}^+_{1/2}$ and $A^2{\Sigma}^+_{-1/2}$ states with $X^2II$and $2^2II$ states, small splittings between the $F_1$ and $F_2$ levels are predicted. Calculated lifetimes of the resonances agree with experimental results reasonably well.

• Bulletin of the Korean Mathematical Society
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• v.58 no.4
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• pp.865-876
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• 2021

Let 𝔽 be a commutative ring. A restricted skew polynomial extension over 𝔽 is a class of iterated skew polynomial 𝔽-algebras which include well-known quantized algebras such as the quantum algebra U_q(𝔰𝔩₂), Weyl algebra, etc. Here we obtain a necessary and sufficient condition in order to be restricted skew polynomial extensions over 𝔽. We also introduce a restricted Poisson polynomial extension which is a class of iterated Poisson polynomial algebras and observe that a restricted Poisson polynomial extension appears as semiclassical limits of restricted skew polynomial extensions. Moreover, we obtain usual as well as unusual quantized algebras of the same Poisson algebra as applications.

• Journal of the Mineralogical Society of Korea
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• v.24 no.4
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• pp.289-300
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• 2011

Atomistic origins of carbon solubility into silicates are essential to understand the effect of carbon on the properties of silicates and evolution of the Earth system through igneous and volcanic processes. Here, we investigate the atomic structure and NMR properties of dissolved carbon in enstatite using Raman spectroscopy and quantum chemical calculations. Raman spectrum for enstatite synthesized with 2.4. wt% of amorphous carbon at 1.5 GPa and $1,400^{\circ}C$ shows vibrational modes of enstatite, but does not show any vibrational modes of $CO_2$ or ${CO_3}^{2-}$. The result indicates low solubility of carbon into enstatite at a given pressure and temperature conditions. Because $^{13}C$ NMR chemical shift is sensitive to local atomic structure around carbon and we calculated $^{13}C$ NMR chemical shielding tensors for C substituted enstatite cluster as well as molecular $CO_2$ using quantum chemical calculations to give insights into $^{13}C$ NMR chemical shifts of carbon in enstatite. The result shows that $^{13}C$ NMR chemical shift of $CO_2$ is 125 ppm, consistent with previous studies. Calculated $^{13}C$ NMR chemical shift of C is ~254 ppm. The current calculation will alllow us to assign potential $^{13}C$ NMR spectra for the enstatite dissolved with carbon and thus may be useful in exploring the atomic environment of carbon.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.103-109
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• 2006

A target for a high-brightness microfocus x-ray tube, which is based on carbon nanotubes (CNT) as electron source, is designed. The x-ray tube has the following specifications: brightness of $1\times10^{11}phs/s.mm^2. mrad^2$, spot size $\~5{\mu}m$, and average x-ray energy of $20\~40 keV$. In order to meet the specifications, the design parameters of the target, such as configuration, material, thickness of the target as well as the required beam current, were optimized using computer code MCNPX. The design parameters were determined from the calculation of both x-ray spectrum and intensity distribution for a transmission type configuration. For the thin transmission type target to withstand vacuum pressure and localized thermal loading, the structural stability and temperature distribution were also considered. The material of the target was selected as molybdenum(Mo) and the optimized thickness was $7.2{\mu}m$ to be backed by $150{\mu}m$ beryllium (Be). In addition, the calculations revealed that the maximum temperature of the transmission target can be maintained within the limits of stable operation.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.339-344
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• 2011

The Ohmic contact of Ti/Au metals on n-type ZnO thin film deposited on c-plane sapphire substrates by pulsed laser deposition was investigated by TLM (transfer length method) patterns. The Ti/Au metal films with thickness of 35 nm and 90 nm were deposited by electron-beam evaporator and thermal evaporator, respectively. By using the photo-lithography method, the $100{\times}100{\mu}m^2$ TLM patterns with $6{\sim}61{\mu}m$ gaps were formed. To improve the electrical properties as well as to decrease an interface states and stress between metal and semiconductor, the post-annelaing process was done in oxygen ambient by rapid thermal annealing system at temperature of $100{\sim}500^{\circ}C$ for 1 min. In this study, it appeared that the minimum specific contact resistivity shows about $1.1{\times}10^{-4}{\Omega}{\cdot}cm^2$ in $300^{\circ}C$ annealed sample, which may be originated from formation of oxygen vacancies of ZnO during an oxidation of Ti metal at the interface of Ohmic contacts.