Effect of rapid thermal annealing on InGaP/InGaAlP multiple quantum well structures grown by molecular beam epitaxy (MBE 성장 InGaP/InGaAlP 다중양자우물의 RTA 에 의한 PL 특성 변화)
-
- Proceedings of the Optical Society of Korea Conference
- /
- 2009.02a
- /
- pp.525-526
- /
- 2009