• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.781-786
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• 2005

The binding energy in the n-type $GaAs/Al_xGa_{1-x}As$ quantum well is calculated. The shooting method, modified from the finite difference method, is used for the calculation of the subband energy level and its wave function. In order to account tot the change of the potential energy due to the charged particles, impurities and electrons, the self consistent method is employed. The wave function used for the calculation of the binding energy is assumed to be composed of the envelope function and hydrogenic 1s function. Then, the binding energies calculated by taking into account lot two different types of the hydrogenic 1s function are compared.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.330-330
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• 2006

The elaboration of fluorescent submicronic polymer particles exhibiting narrow particle size distribution as well as good photostability is of particular interest in various biomedical applications. In the frame of this work, labeled polystyrene latexes have been synthesized by miniemulsion polymerization using luminescent semiconductor nanoparticles (quantum dots, QD). The influence of incorporation of QDs on the polymerization kinetics as well as on the optical properties of the obtained latexes will be discussed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.19-24
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• 1992

The analysis of the resonant tunneling based on the exact solution of Schrodinger equations is performed in a single quantum well structure under applied bias. The transmittivity and the net tunneling current density are calculated with Airy function and the boundary conditions which is suggested by Bastard. The results are compared with those from other methods and boundary conditions. From the calculated J-V characteristics for the tunneling current, the dependence of the voltage location showing the first peak current on the various temperatures and Fermi level is investigated. In addition, the wave function within the structure is obtained and compared with that from the flat-potential model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.42-42
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• 2010

Deep-trenched photonic crystals passing through InGaN/GaN quantum well structural layer have been fabricated on the surface of GaN-based light emitting diode(LED) using by electron beam nanolithography. The lattice constant and hole diameter of the photonic crystals are 230nm and 140nm, respectively. The structural and electro-optical properties have been investigated by scanning electron microscope(SEM) and power-current-voltage(L-I-V). Electroluminescence from GaN-based LED with deep-trenched photonic crystal shows the higher intensity than that without photonic crystal.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.5
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• pp.17-27
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• 2000

In a SCH(separate confinement heterostructure) QW(quantum well) laser, we calculated the optical gain, the differential gain and recombination current in the QW and derived the bulk carrier density in the SCH region as a function of the QW current by using the analytical capture escape model. Based upon above relations, we found the optical gain and the differential gain correspond to the ratios of carrier and current injected into the QW.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.119-125
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• 1995

Strained multiple quantum well(SMQW) PBH-DFB-LDs emitting at 1.55$\mu$m wavelength has been fabricated using OMVPE and LPE crystal growth tecnique. Using the SMQW active layer, a linewidty enhancement factor of 2.65 was obtained at lasing wavelength and consequnently, packaged 42 modules showed a very low average chirp of 0.44nm at 2.5Gbps NRZ direct modulation. The 77 devices showed average threshold current of 8.72mA and average slope efficiency of 0.181 mW/mA, and single longitudinal mode operation with SMSR larger than 30dB up to 5mW. Among the 77 devices, standard deviation of lasing wavelength of 3.57nm was obtained owing to a good crystal growth uniformity.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.33-37
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• 1992

AlGaAs/GaAs quantum well delta-doped channel FET's have been successfully fabricated using by low-pressure metalorganic chemical vapor deposition(LP-MOCVD). The FET's with a gate dimension of 1.8$\mu$m $\times$ 100$\mu$m have a maximum transconductance of 190 mS/mm and a maximum current density of 425 mA/nm. The devices show extremely broad transconductances with a large voltage swing of 2.4V. The S-parameter measurements have indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. These values are among the best performance reported for GaAs based heterojunction FET's with a similar device geometry.

• Journal of Powder Materials
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• v.25 no.2
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• pp.170-177
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• 2018

Colloidally synthesized luminescent nanocrystals (NCs) have attracted tremendous attention due to their unique nanoscale optical and electronic properties. The emission properties of these NCs can be precisely tuned by controlling their size, shape, and composition as well as by introducing appropriate dopant impurities. Nowadays, these NCs are actively utilized for various applications such as optoelectronic devices including light emitting diodes (LEDs), lasers, and solar cells, and bio-medical applications such as imaging agents and bio-sensors. In this review, we classify luminescent nanomaterials into quantum dots (QDs), upconversion nanoparticles (UCNPs), and perovskite NCs and present their intrinsic emission mechanism. Furthermore, the recently emerging issues of efficiency, toxicity, and durability in these materials are discussed for better understanding of industry demands. As well, the future outlook will be offered for researchers to guide the direction of future research.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.6
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• pp.293-297
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• 2005

Linearity is an important property of optical devices for analog communications. In this paper, we study the 3rd-order interrnodulation distortion (IMD3) of an Inp/InGaAsP multiple-quantum-well (MQW) traveling-wave type electroabsorption modulator (TW-EAM). We observe abnormal notches in the IMD3 results those were different from notches by general transfer curve of electroabsorption modulators (EAMs). We analyze the phenomena through absorption coefficients according to wavelengths and bias voltages to verify appearance of the abnormal notchs, where it can be known to result from Stark-shift and broadening. We propose the method to enhance linearity of MQW-EAMs by using these effects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.