• Korean Journal of Culture and Social Issue
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• v.11 no.spc
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• pp.85-95
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• 2005

The present article explored the studies on the relational mechanisms between trust and health in terms of psychosomatic medicine or integrative medicine. For this, the research findings of the Quantum physics, psychosomatic medicine, and traditional eastern healing methods on the mind-body problem and then a practical guide to greater physical and mental well-being is presented. In the first section of the Quantum mechanical human body, the body has a mind of its own, the mechanism and cause of disease, the body as objective experienced conscious, and the effects of consciousness and information on the body are includes. The second section is psychosomatic medicine. In this, the thought changing brain, placebo, the power of expectancy, achieving health by active endeavor, psychoneuroimmunology, and the several therapies are included. Finally, Dr. Benson and Proctor's practical guide to well-being in presented. It is emphasized that the four trusts (trust in oneself, one's doctor, one's treatment, and one's spiritual trust) are crucial to recovery from serious illness and to achieve better health.

• Advances in nano research
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• v.15 no.1
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• pp.59-65
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• 2023

In this present article, the mechanical behavior of single-walled black phosphorene nanotubes (SW-αPNTs) is simulated using molecular dynamics (MD). The proposed model is subjected to the axial loading and the effects of morphological parameters, such as the mono-vacancy defect and strain rate on the tensile behavior of the zigzag and armchair SW-αPNTs are studied as a pioneering work. In order to assess the accuracy of the MD simulations, the stress-strain response of the current MD model is successfully verified with the efficient quantum mechanical approach of the density functional theory (DFT). Along with reproducing the DFT results, the accurate MD simulations successfully anticipate a significant variation in the stress-strain curve of the zigzag SW-αPNTs, namely the knick point. Predicting such mechanical behavior of SW-αPNTs may be an important design factor for lithium-ion batteries, supercapacitors, and energy storage devices. The simulations show that the ultimate stress is increased by increasing the diameter of the pristine SW-αPNTs. The trend is identical for the ultimate strain and stress-strain slope as the diameter of the pristine zigzag SW-αPNTs enlarges. The obtained results denote that by increasing the strain rate, the ultimate stress/ultimate strain are respectively increased/declined. The stress-strain slope keeps increasing as the strain rate grows. It is worth noting that the existence of mono-atomic vacancy defects in the (12,0) zigzag and (0,10) armchair SW-αPNT structures leads to a drop in the tensile strength by amounts of 11.1% and 12.5%, respectively. Also, the ultimate strain is considerably altered by mono-atomic vacancy defects.

• Environmental Analysis Health and Toxicology
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• v.14 no.1_2
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• pp.65-73
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• 1999

Dioxins refer to a family of chemicals comprising 75 polychlorinated dibenzo-p-dioxin (PCDD) and 135 polychlorinated dibenzo-p-furan (PCDF) congeners, which may cause skin disorder, human immune system disruption, birth defects, severe hormonal imbalance, and cancer. The effects of exposure of dioxin-like compounds such as PCBs are mediated by binding to the aryl hydrocarbon receptor (AHR), which is a ligand-activated transcription factor. To grasp physicochemical factors affecting human toxicity of dioxins, six geometrical and topological indices, eleven thermodynamic variables, and quantum mechanical descriptors including ESP (electrostatic potential) were analyzed using QSAR and semi-empirical AM1 method. Planar dioxins with high lipophilicity and large surface tension show the probability that negative electrostatic potential in the lateral oxygen may make hydrogen bonding with DNA bases to be a carcinogen.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.6
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• pp.417-426
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• 2006

A Digital X-ray imaging system using Compton backscattering has been developed to obtain a cross-sectional profile and mass loss of corroded lap-splices of aging aircraft from density variation. A slit-type camera was designed to focus on a small scattering volume inside the material, from which the backscattered photons are collected by a collimated scintillator detector for interpretation of material characteristics. The cross section of the lap-joint is scanned by moving the scattering volume through the thickness direction of the specimen. The mass loss of each layer has been estimated from a Compton backscatter A-scan to obtain the thickness of each layer including the aluminum sheet, the corrosion layer and the sealant. Quantitative information such as location and width of planar corrosion in the lap splices of fuselages is obtained by deconvolution using a nonlinear least-square error minimization method(BFGS method): A simple reconstruction model is also introduced to overcome distortion of the Compton backscatter data due to attenuation effects attributed to beam hardening and quantum noise.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.142-148
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• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.422.1-422.1
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• 2016

Graphene quantum dots (GQDs), a new kind of carbon-based photo luminescent nanomaterial from chemically modified graphene oxide (CMGO) or chemically modified graphene (CMG), has attracted extensive research attention in the last few years due to its outstanding chemical, optical and electrical properties. To further extended its potential applications as optoelectronic devices, solar cells, bio and bio-sensors and so on, intensive research efforts have been devoted to the CMG. However, the CMG, a suspension of aqueous, have problematic since they are prone to agglomeration after drying a solvent. In this study, we synthesized the GQDs from graphite and deposited on silicon substrate by kinetic spray. The photo luminescent properties of deposited GQD films were analyzed and compared with initial GQDs suspension. In addition, its carbon properties were investigated with GQDs solution properties. The properties of deposited GQD films by kinetic spray were similar to that of the GQDs suspension in water. We could provide a pathway for silicon-based silicon based device applications. Finally, the well-adjusted GQD films with photo luminescence effects will show Energy-Down-Shift layer effects on silicon solar cells. The GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density (Jsc) was enhanced by about 2.94 % (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

• Journal of Biomedical Engineering Research
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• v.28 no.6
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• pp.756-767
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• 2007

For the combination of phosphor screens having various thicknesses and a photodiode array manufactured by complementary metal-oxide-semiconductor (CMOS) process, we report the observation of image-quality degradation under the irradiation of 45-kVp spectrum x rays. The image quality was assessed in terms of dark pixel signal, dynamic range, modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). For the accumulation of the absorbed dose, the radiation-induced increase both in dark signal and noise resulted in the gradual reduction in dynamic range. While the MTF was only slightly affected by the total ionizing dose, the noise power in the case of $Min-R^{TM}$ screen, which is the thinnest one among the considered screens in this study, became larger as the total dose was increased. This is caused by incomplete correction of the dark current fixed-pattern noise. In addition, the increase tendency in NPS was independent of the spatial frequency. For the cascaded model analysis, the additional noise source is from direct absorption of x-ray photons. The change in NPS with respect to the total dose degrades the DQE. However, with carefully updated and applied correction, we can overcome the detrimental effects of increased dark current on NPS and DQE. This study gives an initial motivation that the periodic monitoring of the image-quality degradation is an important issue for the long-term and healthy use of digital x-ray imaging detectors.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.571-576
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• 2008

The simulation program for solar cells, PC1D, was briefly reviewed and the device modeling of a multicrystalline Si solar cell using the program was carried out to understand the internal operating principles. The effects of design parameters on the light absorption and the quantum efficiency were investigated and strategies to reduce carrier recombination, such as back surface field and surface passivation, were also characterized with the numerical simulation. In every step of the process, efficiency improvements for the key performance characteristics of the model device were determined and compared with the properties of the solar cell, whose efficiency (20.3%) has been confirmed as the highest in multicrystalline Si devices. In this simulation work, it was found that the conversion efficiency of the prototype model (13.6%) can be increased up to 20.7% after the optimization of design parameters.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.10
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• pp.889-894
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• 2004

Infrared (IR) detectors are widely used for many applications, such as temperature measurement, intruder and fire detection, robotics and industrial equipment, thermoelstic stress analysis, medical diagnostics, and chemical analysis. Quantum detectors commonly need to be refrigerated below 80 K, and thus a cooling system should be equipped together with the detector system. The cooling load, which should be removed by the cooling system to maintain the nominal operating temperature of the detector, critically depends on the insulation efficiency of the cryochamber housing the detector. Thermal analysis of cryochamber includes the conduction heat transfer through a cold well, the gases conduction and gas outgassing, as well as radiation heat transfer, The transient cooling characteristics of an infrared detector cryochamber are investigated experimentally in the present study. The transient cooling load increases as the gas pressure is increased. Gas pressure becomes significant as the cooling process proceeds. Cool down time is also increased as the gas pressure is increased. It is also found that natural convection effects on cool down time become significant when the gas pressure is increased.