• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.153-153
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• 2010

Recently, to develop GaN-based light-emitting diodes (LEDs) with better performances, various approaches have been suggested by many research groups. In particular, using the patterned sapphire substrate technique has shown the improvement in both internal quantum efficiency and light extraction properties of GaN-based LEDs. In this paper, we discuss the influences of the direction of the hexagonal-structure arrays of lens-shaped patterns (HSAPs) formed on sapphire substrates on the crystal, optical, and electrical properties of InGaN/GaN multi-quantum-well (MQW) LEDs. The basic direction of the HSAPs is normal (HSAPN) with respect to the primary flat zone of a c-plane sapphire substrate. Another HSAP tilted by 30o (HSAP30) from the HSAPN structure was used to investigate the effects of the pattern direction. The full width at half maximums (FWHMs) of the double-crystal x-ray diffraction (DCXRD) spectrum for the (0002) and (1-102) planes of the HSAPN are 320.4 and 381.6 arcsecs., respectively, which are relatively narrower compared to those of the HSP30. The photoluminescence intensity for the HSAPN structure was ~1.2 times stronger than that for the HSAP30. From the electroluminescence (EL) measurements, the intensity for both structures are almost similar. In addition, the effects of the area of the individual lens pattern consisting of the hexagonal-structure arrays are discussed using the concept of the planar area fraction (PAF) defined as the following equation; PAF = [1-(patterns area/total unit areas)] For the relatively small PAF region up to 0.494, the influences of the HSAP direction on the LED characteristics were significant. However, the direction effects of the HSAP became small with increasing the PAF.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.263-272
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• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

• Journal of Photoscience
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• v.6 no.4
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• pp.165-170
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• 1999

Asymmetric recognition of chiral alcohol by fluorenone derivatives with chiral substituents through intermolecular hydrogen bonding interaction in the singlet excited state was attempted. 1-((1S, 2R, 5S)-(+)-Menthyloxycarbonyl)aminofluoren-9-one (1-MAF) and 1-((1S, 2R, 5S)-(+)-menthyloxycarbonyl)oxyfluoren-9-one (1-MOF) were synthesized and their photophysical behaviors were characterized by the measurement of absorption and fluorescence spectra, as well as the quantum yield and the lifetime of fluorescence. The excited singlet states of 1-MAF and 1-MOF were revealed to have characteristics similar to those of fluorenone, though the intramolecular CT nature was fairly suppressed as compared with 3- and 4-substituted aminofluorenones. Fluorescences of 1-MAF and 1-MOF in acetonitrile were quenched by the addition of alcohols. Differences in fluorescence quenching efficiency were hardly observe for rather small chiral alcohols such as (R)-(-)- or (S)-(+)-2-butanol, while bulky alcohols such as menthol and isopinocampheol showed chiral recognition effects in their fluorescence quenching of 1-MAF in either acetonitrile or butyronitrile.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Resources Recycling
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• v.32 no.3
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• pp.3-8
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• 2023

This study discussed production, demand, and future prospects of rubidium, which is an alkali group metal that is highly reactive to various media and requires carefulness in handling, but no significant environmental hazard of rubidium has been reported yet. Rubidium is used in various fields such as optoelectronic equipment, biomedical, and chemical industries. Because of difficulty in production as well as limited demand, the transaction price of rubidium is relatively high, but its detail information such as market status and potential growth is uncertain. However, if the mass production of versatile ultra-high-performance equipment such as quantum computers and the necessity of rubidium use in the equipment are confirmed, there is a possibility that the rubidium market will expand in the future. Rubidium is often found together with lithium, beryllium, and cesium, and may be present in granite containing minerals such as lepidolite and pollucite, as well as in seawater and industrial waste. Several technologies such as acid leaching, roasting, solvent extraction, and adsorption are used to recover rubidium. The maximum recovery efficiency of the rubidium from the sources and the processing above is generally high, but, in many practices, rubidium is not the main recovery target, and therefore the actual recovery effects should depend on presence of other valuable components or impurities, together with recovery costs, energy consumption, environmental issues, etc. In conclusion, although the current production and consumption of rubidium are limited, with consideration of the possible market fluctuations according to the emergence of large-scale demand sources, etc., further investigations by related institutions should be necessary.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.422.1-422.1
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• 2016

Graphene quantum dots (GQDs), a new kind of carbon-based photo luminescent nanomaterial from chemically modified graphene oxide (CMGO) or chemically modified graphene (CMG), has attracted extensive research attention in the last few years due to its outstanding chemical, optical and electrical properties. To further extended its potential applications as optoelectronic devices, solar cells, bio and bio-sensors and so on, intensive research efforts have been devoted to the CMG. However, the CMG, a suspension of aqueous, have problematic since they are prone to agglomeration after drying a solvent. In this study, we synthesized the GQDs from graphite and deposited on silicon substrate by kinetic spray. The photo luminescent properties of deposited GQD films were analyzed and compared with initial GQDs suspension. In addition, its carbon properties were investigated with GQDs solution properties. The properties of deposited GQD films by kinetic spray were similar to that of the GQDs suspension in water. We could provide a pathway for silicon-based silicon based device applications. Finally, the well-adjusted GQD films with photo luminescence effects will show Energy-Down-Shift layer effects on silicon solar cells. The GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density (Jsc) was enhanced by about 2.94 % (0.9 mA/cm2) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.314-314
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• 2016

In this paper, the effects of carrier concentration on dielectric constant of ITO films were investigated by spectroscopic ellipsometry. From SE results, we find the pronounced shift of the ${\varepsilon}1$ peaks toward high energy with concentration; while contrarily, the ${\varepsilon}2$ values at low energy region increases with decreasing concentration. These shifts are attributed to the Burstein-Moss and free-carrier absorption effects within ITO films. With increases carrier concentration, the values of extinction coefficients show quite different behaviors in range of wavelength from 200 to 1200 nm. The reduction in k at ${\lambda}{\leq}500nm$, while increasing at ${\lambda}{\geq}500nm$ was observed. The QE of HJ solar cells behaviors can be roughly classified into two regions: short-wavelengths (${\leq}650nm$) and long-wavelengths region (${\geq}650nm$). With increasing carrier concentration as well as energy band gap, QE shows improvement at short-wavelength, while at long-wavelength QE shows opposite trend. Widening band gap energy due to Burstein-Moss shift is the key to improve QE in short-wavelength; simultaneously FCA effect due to optical scattering is attributed to the reduction in QE at long-wavelength. In spite of band gap extension, Jsc calculated from QE decreases from 34.7 mA/cm2 to 33.2 mA/cm2 with increasing carrier concentration. It demonstrated that FCA effect may more govern Jsc in the HJ solar cells.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.225-232
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• 2011

Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.330-336
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• 2002

A quantum-chemical investigation on the conformations and electronic properties of bis[2-{2-methoxy-4,6-di(t-butyl)phenyl}ethenyl]benzenes (MBPBs) as building block for ${\pi}$-conjugate polymer are performed in order to display the effects of t-butyl and methoxy group substitution and of kink(ortho and meta) linkage. The conjugation length of the polymers can be controlled by substituents and kink linkages of backbone. Structures for the molecules, o-, m-, and p-MBPBs as well as unsubstituted o-, m-, and p-DSBs were fully optimized by using semiempirical AM1, PM3 methods, and ab initio HF method with 3-21G(d) basis set. The potential energy curves with respect to the change of single torsion angle are obtained by using semiempirical methods and ab initio HF/3-21G(d) basis set. The curves are similar shape in the molecules with respect to the position of vinylene groups. It is shown that the conformations of the molecules are compromised between the steric repulsion interaction and the degree of the conjugation. Electronic properties of the molecules were obtained by applying the optimized structures and geometries to the ZINDO/S method. ZINDO/S analysis performed on the geometries obtained by AM1 method and HF/3-21G(d) level is reported. The absorption wavelength on the geometries obtained by AM1 method is much longer than that by HF/3-21G(d) level. The absorption wavelength of MBPBs are red shifted with comparison to that of corresponding DSBs in the same torsion angle because of electron donating substituents. The absorption wavelength of isomers with kink(orth and meta) linkage is shorter than that of para linkage.