• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.155-161
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• 2002

We studied the formation of nickel nano thin film that have various electrochromic properties. Nickel thin film having various thickness will apply photoelectronic devices, specially, electrochromic devices. These devices will apply lens, battery, glass and solar cell that have light, thin, simple and small that applied nanotechnology and quantum dot. Nickel thin film was coated by electrochemical method on ITO electrode. We studied the thin film properties by Cyclic voltammetry, Chronoamperometry. Impedance. X-ray diffraction analysis and Atomic force microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.213-213
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• 2012

It has been known that quantum confinement effect of CdSe nanocrystal was observed by increasing the number of deposition cycle using successive ionic layer adsorption and reaction (SILAR) method. Here, we report on thermally-induced quantum confinement effect of CdSe at the given cycle number using spin-coating technology. A cation precursor solution containing $0.3\;M\;Cd(NO_3)_2{\cdot}4H_2O$ is spun onto a $TiO_2$ nanoparticulate film, which is followed by spinning an anion precursor solution containing $0.3\;M\;Na_2\;SeSO_3$ to complete one cycle. The cycle is repeated up to 10 cycles, where the spin-coated $TiO_2$ film at each cycle is heated at temperature ranging from $100^{\circ}C$ to $250^{\circ}C$. The CdSe-sensitized $TiO_2$ nanostructured film is contacted with polysulfide redox electrolyte to construct photoelectrochemical solar cell. Photovoltaic performance is significantly dependent on the heat-treatment temperature. Incident photon-to-current conversion efficiency (IPCE) increases with increasing temperature, where the onset of the absorption increases from 600 nm for the $100^{\circ}C$- to 700 nm for the $150^{\circ}C$- and to 800 nm for the $200^{\circ}C$- and the $250^{\circ}C$-heat treatment. This is an indicative of quantum size effect. According to Tauc plot, the band gap energy decreases from 2.09 eV to 1.93 eV and to 1.76 eV as the temperature increases from $100^{\circ}C$ to $150^{\circ}C$ and to $200^{\circ}C$ (also $250^{\circ}C$), respectively. In addition, the size of CdSe increases gradually from 4.4 nm to 12.8 nm as the temperature increases from $100^{\circ}C$ to $250^{\circ}C$. From the differential thermogravimetric analysis, the increased size in CdSe by increasing the temperature at the same deposition condition is found to be attributed to the increase in energy for crystallization with $dH=240cal/^{\circ}C$. Due to the thermally induced quantum confinement effect, the conversion efficiency is substantially improved from 0.48% to 1.8% with increasing the heat-treatment temperature from $100^{\circ}C$ to $200^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.38-44
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• 2015

This review article summarizes the recent progress of quantum dot (QD)-sensitized solar cells based on mesoporous $TiO_2$ thin films. From the intrinsic characteristics of nanoscale inorganic QDs with various compositions, it was possible to construct a variety of 3rd-generation thin film solar cells by solution process. Depending on preparation methods, colloidal QD sensitizers are pre-prepared for later deposition onto the surface of $TiO_2$ or in-situ deposition of QDs from chemical bath is done for direct growth of QD sensitizers over substrates. Recently, colloidal QD sensitizers have shown an overall power conversion efficiency of ~7% by a very precise control of composition while a representative CdS/CdSe from chemical bath deposition have done ~5% with polysulfide electrolytes. In the near future, it is necessary to carry out systematic investigations for developing new hole-conducting materials and controlling interfaces within the cell, thus leading to an enhancement of both open-circuit voltage and fill factor while keeping the current high value of photocurrents from QDs towards more efficient and stable QD-sensitized solar cells.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.646-651
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• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.263-272
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• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.379-379
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• 2011

본 연구에서는 황화납(PbS)을 감응 물질로 하는 양자점 감응형 태양전지를 제작하고 효율을 측정해보았다. 기판에 진공증착을 통해 seed layer를 형성하고 수열합성법으로 산화아연(ZnO) 나노선 어레이를 기른 후 SILAR(Successive ionic layer adsorption and reaction)법으로 PbS 양자점을 합성하였고, 농도와 cycle에 따른 특성의 변화를 주사전자현미경(SEM), X-선 회절, UV-visible spectrometer를 통해 확인하였다. SILAR법을 통해 PbS가 ZnO 나노선 위에 film 형태로 균일하게 성장한 것을 확인할 수 있었고, 이렇게 합성한 물질을 직접 태양전지로 제작하여 그 효율을 측정하였다. 또한 co-sensitizer 물질로 CdS를 합성하여 두 물질의 감응 물질로서의 성능을 확인하였다. PbS는 비교적 작은 밴드갭을 가지며 양자 제한 효과가 커 밴드갭 조절이 용이하며 여러 종류의 태양전지에서 이용되고 있다. 이러한 PbS를 감응 물질로 하는 양자점 감응형 태양전지 제작을 통해 태양전지에의 적용 가능성을 살펴보고 그러기 위해 필요한 부분들을 모색해보았다.

• Safety and Health at Work
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• v.12 no.3
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• pp.403-415
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• 2021

Background: This study aimed to assess the possibility of benzene exposure in workers of a Korean semiconductor manufacturing company by reviewing the issued patents. Methods: A systematic patent search was conducted with the Google "Advanced Patent Search" engine using the keywords "semiconductor" and "benzene" combined with all of the words accessed on January 24, 2016. Results: As a result of the search, we reviewed 75 patent documents filed by a Korean semiconductor manufacturing company from 1994 to 2010. From 22 patents, we found that benzene could have been used as one of the carbon sources in chemical vapor deposition for capacitor; as diamond-like carbon for solar cell, graphene formation, or etching for transition metal thin film; and as a solvent for dielectric film, silicon oxide layer, nanomaterials, photoresist, rise for immersion lithography, electrophotography, and quantum dot ink. Conclusion: Considering the date of patent filing, it is possible that workers in the chemical vapor deposition, immersion lithography, and graphene formation processes could be exposed to benzene from 1996 to 2010.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.