• Korean Journal of Optics and Photonics
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• v.32 no.4
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• pp.163-171
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• 2021

Conventional white light-emitting diodes (LEDs) for lighting applications consist of blue LEDs and yellow phosphors, the spectrum of which lacks deep red. To improve the color-rendering characteristics of white LEDs, a red quantum-dot film was applied to the diffuser plate of LED lighting. The mean free paths of the quantum dots and the concentration of the TiO₂ particles in the diffuser plate were adjusted to optimize the optical structure of the lighting. The color-rendering index (CRI) was greater than 90 for most conditions, which demonstrates that adoption of the red quantum-dot film is an effective way for improving the color-rendering properties of conventional white LEDs. The angular dispersion of color coordinates could be removed by utilizing the optical cavity formed between the diffuser plate and the reflector on the bottom of the lighting, where multiple passages of the light through the quantum-dot film reduced the differences in optical path length depending on the viewing angle.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Korean Chemical Engineering Research
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• v.46 no.6
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• pp.1081-1086
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• 2008

QDs-LEDs(quantum dot light emitting device) should contain well-organized arrays of QDs on an electron transport layer. Thin films of CdSe/ZnS core-shell QDs were successfully fabricated on $TiO_2$ substrates by using PDMS stamp and micro contact printing method. 2-Carboxyethylphosphonic acid(CAPO) and 1,6-hexanedithiol(HDT) were employed as molecular linkers in assembling CdSe/ZnS core-shell QDs with high-density and uniform array. The CAPO increased the binding strength between the QDs and the substrates, and the HDT induced the strong inter-particle attractions of assembled QDs. The assembling properties of QDs thin films were characterized by SEM, AFM, optical microscope and photoluminescence spectroscope(PL).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.146-146
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• 2015

We report the enhanced performance of poly(N-vinylcarbozole) (PVK)/poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)-based quantum-dot light-emitting diodes by inserting the polyaniline:poly (p-styrenesulfonic acid) (PANI:PSS) interlayer. The QD-LED with PANI:PSS interlayer exhibited a higher luminance and luminous current efficiency than that without PANI:PSS. Ultraviolet photoelectron spectroscopy results exhibited different electronic energy alignments of QD-LEDs with/without the PANI:PSS interlayer. By inserting the PANI:PSS interlayer, the hole-injection barrier at the QD layer/PVK interface was reduced from 1.45 to 1.23 eV via the energy level down-shift of the PVK layer. The reduced barrier height alleviated the interface carrier charging responsible for the deterioration of the current and luminance efficiency. This suggests that the insertion of PANI:PSS interlayer in QD-LEDs contributed to (i) increase the p-type conductivity and (ii) reduce the hole barrier height of QDs/PVK, which are critical factors leading to improve the efficiency of QD-LEDs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.233-240
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• 2012

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8$ : $Eu^{2+}$, $MAlSiN_3$ : $Eu^{2+}$ M-SiON (M = Ca, Sr, Ba), ${\alpha}/{\beta}$-SiAlON : $Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440~460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.6-10
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• 2020

The silver nanowires (AgNWs) were synthesized by the conventional polyol process, which revealed 25 ㎛ and 30 nm of average length and diameter, respectively. The synthesized AgNWs were applied to the CdSe/CdZnS quantum dot (QD) based transparent light-emitting device (LED). The device using a randomly networked AgNWs electrode had some problems such as the high threshold voltage (for operating the device) due to the random pores from the networked AgNWs. As a method of improvement, a composite electrode was formed by overlaying the ZnO:Ga on the AgNWs network. The device used the composite electrode revealed a low threshold voltage (4.4 Vth) and high current density compared to the AgNWs only electrode device. The brightness and current density of the device using composite electrode were 55.57 cd/㎡ and 41.54 mA/㎠ at the operating voltage of 12.8 V, respectively, while the brightness and current density of the device using (single) AgNWs only were 1.71 cd/㎡ and 2.05 mA/㎠ at the same operating voltage. The transmittance of the device revealed 65 % in a range of visible light. Besides the reliability of the devices was confirmed that the device using the composite electrode revealed 2 times longer lifetime than that of the AgNWs only electrode device.

• Prospectives of Industrial Chemistry
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• v.23 no.6
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• pp.14-24
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• 2020

최근 우수한 발광 특성을 갖는 양자점을 고해상도 디스플레이의 발광 소재로 도입하고자 하는 노력이 활발하다. 양자점을 활용한 디스플레이의 실현을 위해서는 콜로이드 상태인 다색의 양자점을 고해상도로 패터닝하는 기술의 확립이 필요하다. 본 연구에서는 ethane-1,2-diyl bis(4-azido-2,3,5,6-tetrafluorobenzoate)를 양자점용 가교제로 활용하여 용액공정을 기반으로 형성된 양자점 박막을 고해상도로 패터닝한 기술을 소개하고자 한다. 위 양자점용 가교제의 양 말단에는 아지드 그룹을 포함한 작용기가 존재한다. 아지드 기는 자외선에 의해 광 활성화되어 양자점 표면의 알킬 리간드와 가교 결합을 형성함으로써, 양자점 박막에 화학적 내구성을 부여한다. 본 기술을 기반으로, 적색, 녹색, 청색의 카드뮴 기반 양자점을 고해상도로 패터닝하고 정밀하게 배열하여 인치 당 화소 수 1400 이상의 픽셀 형성에 성공하였다. 또한 가교 반응 후에도 성능 저하가 없는 양자점 박막 및 자발광 양자점 다이오드를 개발하였다.

• Korean Journal of Optics and Photonics
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• v.32 no.5
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• pp.220-229
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• 2021

The optical characteristics of high-power direct-lit white light-emitting diode (LED) lighting were investigated, where a quantum dot (QD) film was adopted to enhance the color-rendering index (CRI). The transmittance of the diffuser plate and the concentration of the QD film were varied in this study. The color coordinates and the correlated color temperature (CCT) did not show any appreciable change, while the CRI values increased slightly as the transmittance of the diffuser plate decreased. The investigated optical properties were nearly independent of the viewing angle, and the luminance distribution was close to Lambertian. The CCT decreased from approximately 6000 K to approximately 4000 K as the concentration of the QD film increased from 0 to 7.5 wt%, which was due to the enhanced red component in the emission spectrum. The CRI increased to approximately 95 for some optical configurations of the lighting. These results demonstrate that glare-free, color-changeable, high-rendering LED lighting can be realized by using a combination of a diffuser plate of appropriate transmittance and a red QD film.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.3137-3140
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.533-534
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• 2012

Colloidal III-V semiconductor nanocrystal quantum dots (NQDs) have attracted attention as they can be applied in various areas such as LED, solar cell, biological imaging, and so on because they have decreased ionic lattices, lager exciton diameter, and reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals is limited by difficulties in control nucleation because the molecular bonds in III-V semiconductors are highly covalent compared to II-VI compounds. There is a need for a method that provides rapid and scalable production of highly quality nanoparticles. We present a new synthetic scheme for the preparation of InP nanocrystal quantum dots using new phosphorus precursor, P(SiMe2tbu)3. InP nanocrystals from 530nm to 600nm have been synthesized via the reaction of In(Ac)3 and new phosphorus precursor in noncoordinating solvent, ODE. This opens the way for the large-scale production of high quality Cd-free nanocrystal quantum dots.