• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.4
• /
• pp.483-491
• /
• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

• Journal of Information Display
• /
• v.3 no.1
• /
• pp.6-10
• /
• 2002

We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.326-326
• /
• 2008

갈륨 질화물 (GaN) 기반의 발광다이오드(Light Emitting Diode, LED)는 최근 디스플레이, 교동신호등, 휴대폰용 키패드의 광원 등에 널리 사용되는 전자소자로, 차세대 조명용 광원으로도 각광받고 있다. 일반적인 수평 구조의 LED에 비해 수직형 구조 LED 는 발광면이 n-GaN 표면 전체이며, 전류 확산 특성이 매우 뛰어남으로 인해 차세대 구조라고 표현되어 진다. 이런 구조에서 활성층 영역에서의 균일한 전류 분포는 전류밀집 현상을 억제하여 결과적으로 광학적 특성을 향상시킨다. 따라서 현재까지도 전류확산에 따른 발광다이오드의 성능향상에 대한 연구가 다각도로 이루어지고 있다. 본 연구에서는 수직형 GaN LED 의 전극 패턴에 따른 활성층 영역에서의 전류밀도 분포에 대해 조사하였다. 전극 패턴의 크기 및 구조 변화에 따른 활성층 영역에서의 전류분포도를 삼차원 회로 모델을 이용하여 분석하였다. 또한 활성층 영역으로 주입되는 전류 밀도의 크기가 내부양자효율에 미치는 영향에 대하여 알아보았다. 활성층 영역에서의 균일한 전류밀도 분포를 갖는 전극구조를 설계하였으며, 각각의 전극구조를 적용한 수직형 GaN LED의 전기/광학적 특성에 대해 전산모사 하였다. 최종적으로, n-GaN 위 전극의 크기 및 구조 변화에 대한 시뮬레이션 결과를 토대로, 균일한 전류분포 및 내부 양자효율 향상을 위한 전극패턴 설계 방침을 제안한다.

• Proceedings of the Korean Society of Medical Physics Conference
• /
• 2002.09a
• /
• pp.385-388
• /
• 2002

We measured and evaluated digital, pre-sampling and overall imaging properties (characteristic curves, Modulation Transfer Function (MTF), Wiener spectra (WS), Noise Equivalent Quanta (NEQ) and Detective Quantum Efficiency (DQE)) for the direct type and indirect type of Flat-Panel Detector (FPD). First, the digital and overall characteristic curves of the both types of FPD had more wide dynamic range than that of the S/F system. Second, the pre-sampling and overall MTF of the direct-type FPD were superior to those of the indirect-type FPD. Third, for identical exposures, the digital and overall WS of the direct-type FPD were similar or worse than those of the indirect-type FPD, and for larger exposure, the digital WS of the both types of FPD were smaller, but overall WS of the both types of FPD were larger. Fourth, the digital and overall NEQ and DQE of the direct-type FPD were worse than both NEQ and DQE of the indirect-type FPD at lower spatial frequencies, but were better at higher spatial frequencies.

• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.518-523
• /
• 1999

In thi, study, we made experiments to fonn a mesa shape by meltback method with various concentration of solutions and found that unsaturated (20%) InGaAsP (1.55 !-tm) solution at a growth temperature was the most suitable for the formation of a mesa ,hape on the wafer which has an InGaAsP active layer and an InP cap layer on an n-InP substrate. It was difficult to form a proper mesa shape for the fabrication of PBH-LDs only by the meltback method; therefore, we fabricated PBH-LDs by forming the mesa shape with the meltback method after wet etching and by growing a current-blocking layer successively. As the electrical and optical charaleri,tiecs of MQW-PBH-LDs fabricated by above methods, when the cavity length was $300{\mu}m$, the threshold current was about 10 mA, internal quantum efficiency 82%, internal loss $9.2cm^{-1}$, and characteristic temperature was 65 K at $25~45^{\circ}C$ and 42 K at $45~65^{\circ}C$. /TEX>.

• New & Renewable Energy
• /
• v.9 no.2
• /
• pp.30-39
• /
• 2013

Multi-crystalline silicon solar cells is not exist a specific crystal direction different from single crystalline silicon solar cells. In functional materials, therefore, isotropic wet etching of mc-Si solar cell is easy the acid solution rather than the alkaline solution. The reflectance of wet texturing process is about 25% and the reflectance of RIE texturing process is achieved less than 10%. In addition, wet texturing has many disadvantages as well as reflectance. So wet texturing process has been replaced by a RIE texturing process. In order to apply BIPV, RIE and wet textured multi-crystalline silicon solar cell modules was manufactured by different kind of EVA sheet. Moreover, in case of BIPV, the short circuit current characteristics according to the angle of incidence is more important, because the installation of BIPV is fixed location. In this study, we has measured SEM image and I-V curve of RIE and wet textured silicon solar cell and PV module. Also we has analyzed quantum efficiency characteristics of RIE and wet textured silicon solar cell for PV modules depending on incidence angle.

• Journal of Photoscience
• /
• v.8 no.1
• /
• pp.1-7
• /
• 2001

The deteriorative effect of ultraviolet-B(UV-B) radiation on photosynthesis was assessed by the simultaneous measurement of O$_2$ evolution and chlorophyll(Chl) fluorescence in green pepper. UV-B was given at the intensity of 1 W$.$m$\^$-2/, a dosage often encountered in urban area of Seoul in Korea, to detached leaves. Both Pmax and quantum yield of O$_2$ evolution was rapidly decreased, in a parallel phase, with increasing time of UV-B treatment. Chl fluorescence parameters were also significantly affected. Fo was increased while both Fm and Fv were decreased. Photochemical efficiency of PSII(Fv/Fm) was also declined, although to a lesser extent than Pmax. Both qP and NPQ were decreased similarly with increasing time of UV-B treatment. However, PS I remained stable. The addition of lincomycin prior to UV-B treatment accelerated the decline in Fv/Fm to some extent, suggesting that D1 protein turnover may play a role in overcoming the harmful effect of UV-B. The amount of photosynthetic pigments was less affected than photosynthetic response in showing decline in Chl a and carotenoids after 24 h-treatment. Presumptive flavonoid contents, measured by changes in absorbance at 270 nm , 300 nm and 330nm, were all increased by roughly 50% after 8 h-treatment. Among antioxidant enzymes, activities of catalase and peroxidase were steadily increased until 12h of UV-B treatment whereas ascorbate perxidase, dehydroascorvate reductase and glutathione reductase did not show any significant change. The results indicate that deteriorative effect of UV-B on photosynthesis precedes the protection exerted by pigment synthesis and antioxidant enzymes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.7-7
• /
• 2009

Lead telluride (PbTe) is a very promising thermoelectric material due to its narrow band gap (0.31 eV at 300 K), face-centered cubic structure and large average excitonic Bohr radius (46 nm) allowing for strong quantum confinement within a large range of size. In this work, we present the thermoelectric properties of individual single-crystalline PbTe nanowires grown by a vapor transport method. A combination of electron beam lithography and a lift-off process was utilized to fabricate inner micron-scaled Cr (5 nm)/Au (130 nm) electrodes of Rn (resistance of a near electrode), Rf (resistance of a far electrode) and a microheater connecting a PbTe nanowire on the grid of points. A plasma etching system was used to remove an oxide layer from the outer surface of the nanowires before the deposition of inner electrodes. The carrier concentration of the nanowire was estimated to be as high as $3.5{\times}10^{19}\;cm^{-3}$. The Seebeck coefficient of an individual PbTe nanowire with a radius of 68 nm was measured to be $S=-72{\mu}V/K$ at room temperature, which is about three times that of bulk PbTe at the same carrier concentration. Our results suggest that PbTe nanowires can be used for high-efficiency thermoelectric devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.188.1-188.1
• /
• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Korean Chemical Engineering Research
• /
• v.54 no.4
• /
• pp.555-559
• /
• 2016

In this study, new platinum complexes were synthesized utilizing the ligand of a 2,2'-bispyrimidine (bpim), 2,2'-bipyridine (bpy), 5,5'-dimethyl-2,2'-bipyridine (5,5-mebpy), 5'-bromo-2,2'-bipyridine (5-brbpy), 5,5'-dibromo-2,2'-bipyridine (5,5-brbpy), 4,4'-dimethyl-2,2'-bipyridine (4,4-mebpy), 4,4'-dihexyl-2,2'-Bipyridine (4,4-hebpy), 1,10'-Phenanthroline (phen), 3,4,7,8'-tetramethyl-1,10'-Phenanthroline (3,4,7,8-phen). In order to determine chemical structure of Synthesized platinum complexes, $^1H(^{13}C)$-NMR, UV-vis and FT-IR were used and optical physics and chemical properties were measured PL. In the case of platinum complexes, wavelength has been identified 356~421 nm. Quantum efficiency in DMSO solution was appeared 0.05~0.46.