• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.3
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• pp.591-596
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• 1994

Threshold dependence on stripe width in gain-guided single quantum well lasers has been examined by complex domain effective index method. It is found, in narrow stripe regime, that the lateral optical confinement estimated by newly introduced parameters decreases very rapidly as the transverse optical confinement factor decreases. Thus, in a single quantum well laser with a usually very small, the optical confinement may become very poor depending on stripe width not only in the transverse but also in the lateral direction, further enhancing the gain saturation and often leading to an anomalously high threshold current. The understanding of rather anomalous threshold dependence on stripe width will be very important in optimization of quantum well laser diode structure.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.3
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• pp.129-134
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• 2017

We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

• Journal of IKEEE
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• v.22 no.2
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• pp.446-454
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• 2018

In this work, we summarize the calculation processes of obtaining a scattering factor using with the equilibrium average projection scheme (EAPS), with moderately weak coupling (MWC) interaction, and obtain the line-shape formula of an electron-deformation phonon interacting system interested in the confinement of electrons by squarwell confinement potentials in quantum two dimensional system.. Through the numerical analysis, we analysis the magnetic dependence of absorption power, P(B) in several temperature and frequency difference dependence of absorption power $P({\Delta}{\omega})$, in several external field, where ${\Delta}{\omega}={\omega}-{\omega}_0$ and ${\omega}({\omega}_0)$ is the angular frequency (the cyclotron resonance frequency). The result of equilibrium average projection scheme (EAPS) in SER-MWC explains the properties of quantum transition quite well.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.186-186
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• 2012

This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (＜0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

• Korean Journal of Optics and Photonics
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• v.8 no.2
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• pp.122-127
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• 1997

The hexagonal wurtzite structure of CdSe quantum dots are investigated by X-ray diffraction experiment. The absorption peaks due to quantum confinement effect are observed in the linear absorption spectra. Absorption coefficient changes at the lowest transition are measured with pump wavelength at the lowest transition and at the next higher transition from which direct intraband transition is not allowed. The measured larger absorption changes at the lowest transition confirm that the selection rules of intraband transition resulting from quantum confinement effect are satisfied. From the experimental results, therefore, we concluded that the CdSe quantum dots can be described as homogeneous system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.213-213
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• 2012

It has been known that quantum confinement effect of CdSe nanocrystal was observed by increasing the number of deposition cycle using successive ionic layer adsorption and reaction (SILAR) method. Here, we report on thermally-induced quantum confinement effect of CdSe at the given cycle number using spin-coating technology. A cation precursor solution containing $0.3\;M\;Cd(NO_3)_2{\cdot}4H_2O$ is spun onto a $TiO_2$ nanoparticulate film, which is followed by spinning an anion precursor solution containing $0.3\;M\;Na_2\;SeSO_3$ to complete one cycle. The cycle is repeated up to 10 cycles, where the spin-coated $TiO_2$ film at each cycle is heated at temperature ranging from $100^{\circ}C$ to $250^{\circ}C$. The CdSe-sensitized $TiO_2$ nanostructured film is contacted with polysulfide redox electrolyte to construct photoelectrochemical solar cell. Photovoltaic performance is significantly dependent on the heat-treatment temperature. Incident photon-to-current conversion efficiency (IPCE) increases with increasing temperature, where the onset of the absorption increases from 600 nm for the $100^{\circ}C$- to 700 nm for the $150^{\circ}C$- and to 800 nm for the $200^{\circ}C$- and the $250^{\circ}C$-heat treatment. This is an indicative of quantum size effect. According to Tauc plot, the band gap energy decreases from 2.09 eV to 1.93 eV and to 1.76 eV as the temperature increases from $100^{\circ}C$ to $150^{\circ}C$ and to $200^{\circ}C$ (also $250^{\circ}C$), respectively. In addition, the size of CdSe increases gradually from 4.4 nm to 12.8 nm as the temperature increases from $100^{\circ}C$ to $250^{\circ}C$. From the differential thermogravimetric analysis, the increased size in CdSe by increasing the temperature at the same deposition condition is found to be attributed to the increase in energy for crystallization with $dH=240cal/^{\circ}C$. Due to the thermally induced quantum confinement effect, the conversion efficiency is substantially improved from 0.48% to 1.8% with increasing the heat-treatment temperature from $100^{\circ}C$ to $200^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.185-197
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• 1996

We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.535-535
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• 2012

We present a new synthetic route and characterization for ultra small sized PbS quantum dots in extreme quantum confinement with 1.5 to 2.9 nm in diameter. We obtained a series of nanocrystals with first absorption wavelength ranging from 580 to 820 nm (2.1-1.5 eV). To get this result, PbS quantum dots size is finely controlled by adjusting the growth temperature in the range of $70-95^{\circ}C$. We demonstrate that photoluminescence (PL) shows a red shift with respect to the first absorption peak that increases with decreasing PbS quantum dots size and ranges from about 500 to 125 meV as the mean PbS quantum dots diameter increases from 1.5 to 2.9 nm. We further created the assembled PbS quantum dot solids and investigated the transport properties for energy applications.

• Vacuum Magazine
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• v.4 no.4
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• pp.4-13
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• 2017

Quantum structures containing nanoparticles have attracted much attention because of their promising potential applications in electronic and optoelectronic devices operating at lower currents and higher temperatures. The quantum dot is a particle of matter so small that the addition or removal of an electron changes its properties in some useful way. The Quantum dots typically have dimensions measured in nanometers, where one nanometer is 10-9 meter or a millionth of a millimeter. The emission and absorption spectra corresponding to the energy band gap of the quantum dot is governed by quantum confinement principles in an infinite square well potential. The energy band gap increases with a decrease in size of the quantum dot. In this review paper, we will discuss the quantum dot and their application.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.12-13
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• 2005