• 제목/요약/키워드: Quantum Confinement

검색결과 141건 처리시간 0.025초

단일양자우물 Laser Diode에서 Stripe 폭이 문턱치에 미치는 영향 (Effect of Stripe Width on Threshold in Single Quantum Well Laser Diodes)

  • 이성재
    • 한국통신학회논문지
    • /
    • 제19권3호
    • /
    • pp.591-596
    • /
    • 1994
  • Gain-guided 구조를 갖는 단일양자우물 laser diode에서, stripe 폭에 따른 threshold의 변화를 복소수영역 유효굴적률방법을 이용하여 분석하였다. 분석결과 stripe 폭이 좁은 영역에서는, 측방향광집속률을 나타내기위하여 세롭게 도입된 변수 가 수직방향광집속률 가 감소함에따라 급격하게 감소하는 경향을 알아내었다. 따라서 일반적으로 매우작은 수직방향광집속률을 갖는 단일양자우물 laser diode에서는, stripe 폭의 크기에 따라서는 광집속률이 측방향은 물론 수직방향으로도 매우 나빠지게 됨으로 이득포와현상을 더욱 심하게시키게되며 경우에 따라서는 문턱전류가 비정상적으로 증가하는 현상으로 이어지게된다. 이와같은 문턱치의 stripe 폭에 대한 약간의 비정상적인 의존성을 이해하는 것은 양자우물 laser diode의 구조최적화에 있어서 매우 중요한 일이라고 판단된다.

  • PDF

전자 포텐셜 변형과 포논 상호작용에 의한 준 이차원 Si 구조의 전도 현상 해석 (Quantum Transition Properties of Quasi-Two Dimensional Si System in Electron Deformation Potential Phonon Interacting)

  • 이수호;김영문;김해재;주석민
    • 전기학회논문지P
    • /
    • 제66권3호
    • /
    • pp.129-134
    • /
    • 2017
  • We investigated theoretically the quantum optical transition properties of Si, in quasi 2-Dimensinal Landau splitting system, based on quantum transport theory. We apply the quantum transport theory (QTR) to the system in the confinement of electrons by square well confinement potential under linearly polarized oscillating field. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on four transition processes, namely, the intra-leval transition process, the inter-leval transition process, the phonon emission transition process and the phonon absorption transition process.

The magnetic dependence of 2-dimension quantum optical transition in electron-deformation potential phonon interaction systems in Ge

  • Choi, Hyenil;Cho, Hyunchul;Lee, Suho
    • 전기전자학회논문지
    • /
    • 제22권2호
    • /
    • pp.446-454
    • /
    • 2018
  • In this work, we summarize the calculation processes of obtaining a scattering factor using with the equilibrium average projection scheme (EAPS), with moderately weak coupling (MWC) interaction, and obtain the line-shape formula of an electron-deformation phonon interacting system interested in the confinement of electrons by squarwell confinement potentials in quantum two dimensional system.. Through the numerical analysis, we analysis the magnetic dependence of absorption power, P(B) in several temperature and frequency difference dependence of absorption power $P({\Delta}{\omega})$, in several external field, where ${\Delta}{\omega}={\omega}-{\omega}_0$ and ${\omega}({\omega}_0)$ is the angular frequency (the cyclotron resonance frequency). The result of equilibrium average projection scheme (EAPS) in SER-MWC explains the properties of quantum transition quite well.

Size-dependent Optical and Electrical Properties of PbS Quantum Dots

  • Choi, Hye-Kyoung;Kim, Jun-Kwan;Song, Jung-Hoon;Jeong, So-Hee
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
    • /
    • pp.186-186
    • /
    • 2012
  • This report investigates a new synthetic route and the size-dependent optical and electrical properties of PbS nanocrystal quantum dots (NQDs) in diameters ranging between 1.5 and 6 nm. Particularly we synthesize ultra-small sized PbS NQDs having extreme quantum confinement with 1.5~2.9 nm in diameter (2.58~1.5 eV in first exciton energy) for the first time by adjusting growth temperature and growth time. In this region, the Stokes shift increases as decreasing size, which is testimony to the highly quantum confinement effect of ultra-small sized PbS NQDs. To find out the electrical properties, we fabricate self-assembled films of PbS NQDs using layer by layer (LBL) spin-coating method and replacing the original ligands with oleic acid to short ligands with 1, 2-ethandithiol (EDT) in the course. The use of capping ligands (EDT) allows us to achieve effective electrical transport in the arrays of solution processed PbS NQDs. These high-quality films apply to Schottky solar cell made in an glass/ITO/PbS/LiF/Al structure and thin-film transistor varying the PbS NQDs diameter 1.5~6 nm. We achieve the highest open-circuit voltage (<0.6 V) in Schottky solar cell ever using PbS NQDs with first exciton energy 2.58 eV.

  • PDF

흡수 계수와 흡수 계수 변화 특성에 따른 CdSe 양자 구슬 구조의 균일성 조사 (Homogeneous characteristics of CdSe quantum dots from absorption coefficient and its change)

  • 황영남;신상훈;박승한;김웅;김동호
    • 한국광학회지
    • /
    • 제8권2호
    • /
    • pp.122-127
    • /
    • 1997
  • CdSe 양자 구슬 구조의 X선 회절 무늬를 조사하여 그 결정 구조가 육각 결정 구조임을 밝혔고, 선형 흡수 스펙트럼으로부터 양자 구속 효과에 의한 흡수 봉우리들이 나타남을 확인하였다. 에너지가 낮은 에너지 준위보다 높은 에너지 준위에 많은 전자-양공 짝을 만들었을 때, 낮은 에너지 준위에 대한 흡수 봉오리의 흡수 계수 변화가 작게 일어남을 관찰함으로써 띠내 전이의 선택률이 잘 지켜지고 있음을 확인하였다. 이로부터 실험에 사용된 CdSe 양자 구슬 구조가 크기 및 모양의 불규칙성으로 인한 불균일계라기 보다는 균일계로 기술되어짐을 밝혔다.

  • PDF

Quantum Confinement Effect Induced by Thermal Treatment of CdSe Adsorbed on $TiO_2$ Nanostructure

  • Lee, Jin-Wook;Im, Jeong-Hyeok;Park, Nam-Gyu
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
    • /
    • pp.213-213
    • /
    • 2012
  • It has been known that quantum confinement effect of CdSe nanocrystal was observed by increasing the number of deposition cycle using successive ionic layer adsorption and reaction (SILAR) method. Here, we report on thermally-induced quantum confinement effect of CdSe at the given cycle number using spin-coating technology. A cation precursor solution containing $0.3\;M\;Cd(NO_3)_2{\cdot}4H_2O$ is spun onto a $TiO_2$ nanoparticulate film, which is followed by spinning an anion precursor solution containing $0.3\;M\;Na_2\;SeSO_3$ to complete one cycle. The cycle is repeated up to 10 cycles, where the spin-coated $TiO_2$ film at each cycle is heated at temperature ranging from $100^{\circ}C$ to $250^{\circ}C$. The CdSe-sensitized $TiO_2$ nanostructured film is contacted with polysulfide redox electrolyte to construct photoelectrochemical solar cell. Photovoltaic performance is significantly dependent on the heat-treatment temperature. Incident photon-to-current conversion efficiency (IPCE) increases with increasing temperature, where the onset of the absorption increases from 600 nm for the $100^{\circ}C$- to 700 nm for the $150^{\circ}C$- and to 800 nm for the $200^{\circ}C$- and the $250^{\circ}C$-heat treatment. This is an indicative of quantum size effect. According to Tauc plot, the band gap energy decreases from 2.09 eV to 1.93 eV and to 1.76 eV as the temperature increases from $100^{\circ}C$ to $150^{\circ}C$ and to $200^{\circ}C$ (also $250^{\circ}C$), respectively. In addition, the size of CdSe increases gradually from 4.4 nm to 12.8 nm as the temperature increases from $100^{\circ}C$ to $250^{\circ}C$. From the differential thermogravimetric analysis, the increased size in CdSe by increasing the temperature at the same deposition condition is found to be attributed to the increase in energy for crystallization with $dH=240cal/^{\circ}C$. Due to the thermally induced quantum confinement effect, the conversion efficiency is substantially improved from 0.48% to 1.8% with increasing the heat-treatment temperature from $100^{\circ}C$ to $200^{\circ}C$.

  • PDF

응력완화 1.3$\mu$m GaInAsP/InP uncooled-LD의 다중양자우물층과 SCH층 구조에 따른 동작 특성 (The operating characteristics of strain-compensated 1.3$\mu$m GaInAsP/InP uncooled-LD with the structure of multiple quantum well and separate confinement heterostructure layers)

  • 조호성;박경현;이정기;장동훈;김정수;박기성;박철순;김홍만;편광의
    • 전자공학회논문지A
    • /
    • 제33A권7호
    • /
    • pp.185-197
    • /
    • 1996
  • We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E$_{g}$ = 0.905eV) wells and 0.7% tensile strained GaInAsP(E$_{g}$ = 1.107eV) barriers grown by metal organic vapor phase epitaxy (MOVPE). We hav einvestigated effects of number of wells and the structure of the separate confinement heterostructure (SCH) layer in the strain-compensated MQW-PBH-LD. The threshold current, the external quantum efficiency, the transparency current density J$_{o}$, and the gain constant .beta. have been evaluated for uncoated MQW-PBH-LD. As the number of wells increases, the internal quantum efficiency and the transparency current density decreases, whereas the gain contant increases. The small width of the SCH layer shows the large internal quantum efficiency. The small internal loss and the large gain constant have been obtained by inserting the large bandgap SCH layer.

  • PDF

Synthesis of Ultra-small PbS Nanocrystal Quantum Dots for Energy Applications

  • 최혜경;정소희
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
    • /
    • pp.535-535
    • /
    • 2012
  • We present a new synthetic route and characterization for ultra small sized PbS quantum dots in extreme quantum confinement with 1.5 to 2.9 nm in diameter. We obtained a series of nanocrystals with first absorption wavelength ranging from 580 to 820 nm (2.1-1.5 eV). To get this result, PbS quantum dots size is finely controlled by adjusting the growth temperature in the range of $70-95^{\circ}C$. We demonstrate that photoluminescence (PL) shows a red shift with respect to the first absorption peak that increases with decreasing PbS quantum dots size and ranges from about 500 to 125 meV as the mean PbS quantum dots diameter increases from 1.5 to 2.9 nm. We further created the assembled PbS quantum dot solids and investigated the transport properties for energy applications.

  • PDF

양자점과 응용기술 (Quantum dot and their applications)

  • 손동익
    • 진공이야기
    • /
    • 제4권4호
    • /
    • pp.4-13
    • /
    • 2017
  • Quantum structures containing nanoparticles have attracted much attention because of their promising potential applications in electronic and optoelectronic devices operating at lower currents and higher temperatures. The quantum dot is a particle of matter so small that the addition or removal of an electron changes its properties in some useful way. The Quantum dots typically have dimensions measured in nanometers, where one nanometer is 10-9 meter or a millionth of a millimeter. The emission and absorption spectra corresponding to the energy band gap of the quantum dot is governed by quantum confinement principles in an infinite square well potential. The energy band gap increases with a decrease in size of the quantum dot. In this review paper, we will discuss the quantum dot and their application.