• Title/Summary/Keyword: Quality Factor(Q)

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Effect of Calcination Temperature on the Piezoelectric Characteristics of Low Temperature Sintering PMN-PZN-PZT ceramics (하소온도가 저온소결 PMN-PZN-PZT 세라믹스의 압전특성에 미치는 영향)

  • Lee, Il-Ha;Lee, Sang-Ho;Yoo, Ju-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.214-216
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    • 2006
  • In this study, in order to develop the composition ceramics for low loss and low temperature sintering multilayer piezoelectric actuator, PMN-PZN-PZT ceramics were fabricated using two stage calcination method and $Li_2CO_3$, $Bi_2O_3$ and CuO as sintering aids and their piezoelectric characteristics were investigated according to the 2nd calcination and sintering temperature. At the calcination temperature of $750^{\circ}C$ and sintering temperature of $930^{\circ}C$, density, electromechanical coupling factor ($k_p$), mechanical quality factor ($Q_m$), Dielectric constant (${\varepsilon}_r$) and piezoelectric constant ($d_{33}$) of specimen showed the optimum value of $7.94g/cm^2$ 0.581, 1554, 1555 and 356pC/N, respectively for multilayer piezoelectric actuator application.

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A High Performance Solenoid-Type MEMS Inductor

  • Seonho Seok;Chul Nam;Park, Wonseo;Kukjin Chun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.3
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    • pp.182-188
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    • 2001
  • A solenoid-type MEMS inductor with a quality factor over 10 at 2 GHz has been developed using an electroplating technique. The integrated spiral inductor has a low Q factor due to substrate loss and skin effects. It also occupies a large area compared to the solenoid-type inductor. The direction of flux of the solenoid-type inductor is parallel to the substrate, which can lower the substrate loss and other interference with integrated passive components. To estimate the characteristics of the proposed inductor over a high frequency range, the 3D FEM (Finite Element Method) simulation is used by using the HFSS at the Ansoft corporation. The electroplated solenoid-type inductor is fabricated on a glass substrate step by step by using photolithography and copper electroplating. The fabrication process to improve the quality factor of the inductor is also developed. The achieved inductance varies within a range from 0.5 nH to 2.8 nH, and the maximum Q factor is over 10.

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A Study on the Electrical Properties of $xPb(R_{1/2}Ta_{1/2})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$(R=Al,Y) Ceramics ($xPb(R_{1/2}Ta_{1/2})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$(R=Al, Y) 세라믹스의 전기적 특성에 관한 연구)

  • Kang, Do-Won;Park, Tae-Gone
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.157-160
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    • 2001
  • We have investigated the Dielectric and Piezoelectric properties of $xPb(R_{1/2}Ta_{1/2})O_3-(1-x)Pb(Zr_{0.52}Ti_{0.48})O_3$ (R=Al,Y) solid solutions in which R ions are substituted for Al and Y ions. The maximum value of electromechanical coupling factor kp of 55% and 51% were obtained at the composition of 5mol% PAT and 5mol% PYT. However mechanical quality factor$(Q_m)$ had a minimum value of 44 and 69 at the composition of 5mol% PAT and 5mol% PYT. Also, the maximum value of piezoelectctric constant of $d_{33}(329[pC/N])$ and $d_{33}(310[pC/N])$ were obtained at the composition of 5mol% PAT and 5mol% PYT.

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Piezoelectric and Dielectric Characteristics of PAN-PZT Ceramics with BaCO3Addition (BaCO3첨가량에 따른 PAN-PZI계 세라믹스의 압전 및 유전특성)

  • 박타리;이동균;최지원;강종윤;김현재;윤석진;고태국
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.4
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    • pp.356-360
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    • 2002
  • The piezoelectric properties of $0.05Pb(Al_{0.5}Nb_{0.5})O_3-0.95Pb(Zr_{0.52}Ti_{0.48})O_3+0.7wt%Nb_2O_5+o.5wt%MnO_2$ ceramics with the additive of BaCO$_3$were investigated. As the addition of BaCO$_3$increased from 0 to 0.4 wt%, the dielectric constant ($\epsilon^T _{33}$), piezoelectric constant ($d_33$), electromechanical coupling factor ($k_p$), and mechanical quality factor ($Q_m$) increased, while the dielectric loss ($tan\delta$) decreased. The highest piezoelectric and dielectric properties were observed at $1200^{\circ}C$ of the sintered temperature with 0.4 wt% of $BaCO_3$, and the properties of $d_33$, $k_p$, and $Q_m$ were 339 pC/N, 60% and 1754, respectively.

Chamber to Chamber Variations of a Cylindrical Ionization Chamber for the Calibration of an $^{192}Ir$ Brachytherapy Source Based on an Absorbed Dose to Water Standards (물흡수선량 표준에 기반한 $^{192}Ir$ 근접치료 선원 교정 시 원통형 이온함의 이온함 간 변화)

  • Kim, Seong-Hoon;Huh, Hyun-Do;Choi, Sang-Hyun;Kim, Chan-Hyeong;Min, Chul-Hee;Shin, Dong-Oh;Choi, Jin-Ho
    • Progress in Medical Physics
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    • v.20 no.1
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    • pp.7-13
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    • 2009
  • This work is for the preliminary study for the calibration of an $^{192}Ir$ brachytherapy source based on an absorbed dose to water standards. In order to calibrate brachytherapy sources based on absorbed dose to water standards using a clyndirical ionization chamber, the beam quality correction factor $k_{Q,Q_0}$ is needed. In this study $k_{Q,Q_0}s$ were determined by both Monte carlo simulation and semiexperimental methods because of the realistic difficulties to use primary standards to measure an absolute dose at a specified distance. The 5 different serial numbers of the PTW30013 chamber type were selected for this study. While chamber to chamber variations ran up to maximum 4.0% with the generic $k^{gen}_{Q,Q_0}$, the chamber to chamber variations were within a maximum deviation of 0.5% with the individual $k^{ind}_{Q,Q_0}$. The results show why and how important ionization chambers must be calibrated individually for the calibration of $^{192}Ir$ brachytherapy sources based on absorbed dose to water standards. We hope that in the near future users will be able to calibrate the brachytherapy sources in terms of an absorbed dose to water, the quantity of interest in the treatment, instead of an air kerma strength just as the calibration in the high energy photon and electron beam.

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Experimental Study of Quality Factor on Slot Slow Waveguide (스롯형 지파도파관의 Q치의 실험적 연구)

  • Kim, Won-Sop
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.585-587
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    • 2009
  • A large diameter slot waveguide made backward wave oscillator is investigated experimentally. The parameters of slow wave structure are chosen so that the oscillation frequency is about 20 GHz. Plasma is produced by the beam and it has favorable effects on beam propagation and Cherncov oscillation. The output power strongly enhanced when the guiding magnetic field approaches to the fundamental electron cyclotron resonance.

Q 인자 특성을 개선한 병렬 분기형 인덕터

  • Bae, Hyeon-Cheol;Kim, Sang-Hun;Lee, Ja-Yeol;Lee, Sang-Heung
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.547-548
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    • 2006
  • In this paper, cost effective parallel-branch inductor has been proposed and developed in order to increase the quality factor of the conventional spiral inductor. This parallel-branch inductor is composed of only two metals. The presented parallel-branch inductor shows 12% improvement in the quality factor with the same area as the conventional inductor. Also, we improve the parallel-branch inductor for high frequency applications.

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A High Gain and High Harmonic Rejection LNA Using High Q Series Resonance Technique for SDR Receiver

  • Kim, Byungjoon;Kim, Duksoo;Nam, Sangwook
    • Journal of electromagnetic engineering and science
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    • v.14 no.2
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    • pp.47-53
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    • 2014
  • This paper presents a high gain and high harmonic rejection low-noise amplifier (LNA) for software-defined radio receiver. This LNA exploits the high quality factor (Q) series resonance technique. High Q series resonance can amplify the in-band signal voltage and attenuate the out-band signals. This is achieved by a source impedance transformation. This technique does not consume power and can easily support multiband operation. The chip is fabricated in a $0.13-{\mu}m$ CMOS. It supports four bands (640, 710, 830, and 1,070MHz). The measured forward gain ($S_{21}$) is between 12.1 and 17.4 dB and the noise figure is between 2.7 and 3.3 dB. The IIP3 measures between -5.7 and -10.8 dBm, and the third harmonic rejection ratios are more than 30 dB. The LNA consumes 9.6 mW from a 1.2-V supply.

Realization of High Q Inductor on Low Resistivity Silicon Wafer using a New and simple Trench Technique (새로운 트랜치 방법을 이용한 저저항 실리콘 기판에서의 High Q 인덕터의 구현)

  • 이홍수;이진효유현규김대용
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.629-632
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    • 1998
  • This paper presents a new and simple technique to realize high Q inductor on low resistivity silicon wafer with 6 $\Omega$.cm. This technique is very compatible with bipolar and CMOS standard silicon process. By forming the deep and narrow trenches on the low resistivity wafer substrate under inductor pattern, oxidizing and filling with undoped polysilicon, the low resistivity silicon wafer acts as high resistivity wafer being suitable for the fabrication of high Q inductor. By using this technique the quality factor (Q) for 8-turn spiral inductor was improved up to max. 10.3 at 2 ㎓ with 3.0 $\mu\textrm{m}$ of metal thickness. The experiment results show that Q on low resistivity silicon wafer with the trench technique have been improved more than 2 times compared to the conventional low resistivity silicon wafer without trenches.

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Study on tuning factor($\delta$) and quality factor(Q) for design of a single-tuned PHF (단일동조 수동고조파필터 설계시의 동조계수($\delta$) 및 양호도(Q) 값 연구)

  • Cho, Young-Sik;Cha, Han-Ju
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.903_904
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    • 2009
  • 본 논문에서는 대표적인 고조파 저감기법인 단일동조 수동고조파필터(single-tuned Passive Harmonic Filter)의 설계 시에 반드시 고려해야 할 최적의 동조계수($\delta$)와 양호도(Q)값의 결정 방법을 제안하였다. 두 값들은 실 사례를 통하여 결정하였고, 결정된 값들은 보드선도를 이용한 주파수 영역 해석을 수행한 후 최종적으로 이 값들을 반영하여 설계된 수동고조파필터의 성능확인을 통하여 본 논문에서 결정한 두 값들의 적합성을 평가하였다.

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