• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.541-544
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• 2002

In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.428-432
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• 2015

Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.987-993
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• 2003

We fabricated thick film monopole antennas using Mo-doped BiNbO$_4$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped BiNbO$_4$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of Bi$_2$MoO$_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at.%, highest gain of -0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.300-304
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• 2002

We fabricated thick film monopole antennas using Mo-doped $BiNbO_{4}$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped $BiNbO_{4}$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of $Bi_{2}MoO_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at%, highest gain of ~0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Korean Journal of Crystallography
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• v.17 no.1
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• pp.24-32
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• 2006

The microwave dielectric properties of $Zn_3Nb_2O_8\;with\;V_2O_5$ addition were investigated. The addition of $V_2O_5$ enhanced the sinterability of $Zn_3Nb_2O_8$, which resulted in high density of $Zn_3Nb_2O_8$ ceramic greater than 95% of the theoretical value when sintered at $900^{\circ}C$ for 4 hours. X-ray diffraction analysis of sintered $Zn_3Nb_2O_8$ ceramic showed no second phase with $V_2O_5$ addition. Dielectric permittivity(${\varepsilon}_r$) and quality factor($Q{\times}f$) varied with both density at different sintering temperature and $V_2O_5$ addition. Dielectric permittivity, quality factor and temperature coefficient($T_{cf}$) of the two mole of $V_2O_5\;added\;Zn_3Nb_2O_8$ that was sintered at $900^{\circ}C$ were 21.4, 40,000, $-54ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.485-492
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• 2000

The sintering characteristics and the effects of density on dielectric properties in 0.2Ba(Mg$_{1}$3(Nb$_{2}$3/)O$_3$-0.8Ba(Mg$_{1}$3//Ta$_{2}$3/)O$_3$ceramics were investigated. The samples were made by the powder mixing techniques with the two step calcining conditions. When the 1st and the 2nd calcining temperatures were 120$0^{\circ}C$ and the sintering temperature was 155$0^{\circ}C$the density of samples showed the highest value (7.45 g/cm$^3$, 98.5% of theoretical density) among them. The dielectric constant of samples was nearly independent of density but the tan $\delta$ and the temperature coefficient of dielectric constant decreased linearly with increasing of the density. The quality factor(Q$\times$f), the temperature coefficient of resonance frequency and the dielectric constant of Ba[Mg$_{1}$3(Nb$_{0.2}$/Ta$_{0.8}$)sub 2/3/]O$_3$ceramic were 79,548 GHz, +1.5 ppm/$^{\circ}C$ and 26 in the microwave range, respectively.ely.

• The Korean Journal of Nuclear Medicine Technology
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• v.19 no.2
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• pp.63-67
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• 2015

Purpose Among various causes that influence image quality degradation, various methods for decrease in Artifact occurred by respiration of patients are being used. Among them, this study intended to evaluate CTAC Shift correction method and additional scan compare to the Scan(Q static scan) using respiratory gated system. Materials and Methods This study was conducted on 10 patients, and used PET-CT Discovery 710 (GE Healthcare, MI, USA) and Varian's RPM system. 5.18 Mbq per kg of $^{18}F$-FDG was injected on patients, asked them to take a rest for 1 hour in the bed, and conducted test after urination. Images were visualized through Q static scan, CTAC Shift correction method, Additional scan based on the Whole body scan(WBS) with Artifact. Decrease in Artifact was compared in each image, conducted Gross Evalution, and measured changes of SUVmax. Results For image obtained through the CTAC Shift correction method through WBS with Artifact, 12~56%, Q static scan image showed 17~54% of change rate and Additional Scan showed -27~46% of change rate. In Blind Test, the CTAC Shift correction image showed the highest point with 4 points, Q static scan image showed 3.5 points, and Additional scan image showed 3.4 points. The standardized WBS scan through Oneway ANOVA and three types of Scan method showed significant difference(p<0.05), and did not show significant difference between the three Scan methods(p>0.05). However, the three Scan methods showed significant difference in Blind test. Conclusion Additional scan and Q static scan require more time than the CTAC Shift correction method, there is concern about excessive exposure to patients by CT rescan and Q static scan is difficult to apply on patients with inconsistent respiration or irregular respiration cycle due to pain. For CTAC Shift correction method, limited correction is possible and the range is limited as well. It is considered as a useful method of improving diagnostic value when hospitals use the system appropriately and develop various advantageous factors of each method.