• Journal of electromagnetic engineering and science
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• v.16 no.1
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• pp.35-43
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• 2016

A compact ultra-wide band antenna with a quadruple band-notched characteristic is proposed. The proposed antenna consists of a slotted trapezoid patch radiator, an inverted U-shaped band stop filter, a pair of C-shaped band stop filters, and a rectangular ground plane. To realize the quadruple notch-band characteristic, a U-shaped slot, a complementary split ring resonator, an inverted U-shaped band stop filter, and two C-shaped band stop filters are utilized in this antenna. The antenna satisfies the -10 dB reflection coefficient bandwidth requirement in the frequency band of 2.88-12.67 GHz, with a band-rejection characteristic in the WiMAX (3.43-3.85 GHz), WLAN (5.26-6.01 GHz), X-band satellite communication (7.05-7.68 GHz), and ITU 8 GHz (8.08-8.87 GHz) signal bands. In addition, the proposed antenna has a compact volume of $30mm{\times}33.5mm{\times}0.8mm$ while maintaining omnidirectional patterns in the H-plane. The experimental and simulated results of the proposed antenna are shown to be in good agreement.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.1
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• pp.31-38
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• 2020

In this paper, we propose a quadruple band antenna for GPS/WLAN/WiMAX application. The proposed antenna has quadruple band characteristics by considering the interconnection of four strip lines and DGS on the ground place. The total substrate size is 20.0 mm (W1) ⨯27.0 mm (L1), thickness (h) 1.0 mm, and the dielectric constant is 4.4, which is made of 20.0 mm (W2)⨯ 27.0 mm (L8 + L6+ L10) antenna size on the FR-4 substrate. From the fabrication and measurement results, bandwidths of 60 MHz (1.525 to 1.585 GHz) bandwidth for GPS band, 825 MHz (3.31 to 4.135 GHz) bandwidth for WiMAX band and 480 MHz (2.395 to 2.975 GHz) and 385 MHz (5.10 to 5.485 GHz) bandwidth for WLAN band were obtained on the basis of -10 dB. Also, gain and radiation pattern characteristics are measured and shown in the frequency of triple band as required.

• ETRI Journal
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• v.36 no.4
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• pp.690-693
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• 2014

Compact multi-band bandpass filters using quad-mode stub-loaded resonators are proposed in this letter. Firstly, a novel approach about the mode-splitting characteristics of the quadruple-mode resonator is investigated, which can provide dual-band behavior. Secondly, a quad-band filter is proposed and designed by cascading two quadruple-mode resonators; the upper one operates at 1.8/2.4 GHz (GSM- and WiMax-band) and the lower one at 1.57/2.1 GHz (GPS- and WCDMA-band). Finally, the proposed filters have been fabricated. Respectable agreement between simulation and measurement verifies the validity of this design methodology.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.55-60
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• 2005

A V-band MIMIC quadruple subharmonic mixer is reported in this paper. The cascode harmonic generator is proposed for a high conversion gain. The proposed cascode harmonic generator is shown with a 4-th harmonic output characteristic that represents an average of 2.9 dB and a maximum of 4 dB higher than the conventional multiplier. The measured result of the subharmonic mixer has a conversion gain of 3_4 dB which a good conversion gain at a LO power of 13 dBm. Isolations of LO-to-IF and LO-to-RF were obtained -53.6 dB and -46.2 dB, respectively. The conversion gain of the subharmonic mixer in this study has a higher conversion gain compared with some other reports in millimeter-wave range.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.7
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• pp.293-299
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• 2003

In this paper, we have proposed a high conversion and isolation characteristic V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While most of the sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on a sub-harmonic mixer with APDP(anti-parallel diode pair) and the 0.1 ${\mu}{\textrm}{m}$ PHEMT's (pseudomorphic high electron mobility transistors). Lumped elements at IF port provide better selectivity of IF frequency and increase isolation. Maximum conversion gain of 0.8 ㏈ at a LO frequency of 14.5㎓ and at a RF frequency of 60.4 ㎓ is measured. Both LO-to-RF and LO-to-IF isolations are higher than 50 ㏈. The conversion gain and isolation characteristic are the best performances among the reported quadruple sub-harmonic mixer operating in the V-band millimeter wave frequency thus far.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.10
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• pp.1240-1247
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• 2019

In this paper, we designed a four-band antenna that can be applied to WLAN and WiMAX systems by designing a microstrip feeding structure, four branch lines and a slit on the ground plane. The proposed antenna is designed with a size of 16.0 mm (W1) × 48.0 mm (L8) on a dielectric substrate of 18.0 mm (W) × 50.0 mm (L) × 1.0 mm(h). and a slit of 2.9 mm (W7) × 4.0 mm (L7) is inserted into the ground plane of 18.0 mm (W) × 18.7 mm (L6). Based on -10 dB production and measurement results, it obtained 60.8 MHz (8,730~9,338 MHz), 310 MHz (2.33~2.64 GHz) in the 2.4 GHz band, 420MHz (3.39~3.81 GHz) in the 3.4 GHz band, and 2,070 MHz (4.62~6.69 GHz) in the 5.0 GHz. In addition, the gain and radiation pattern characteristics of the quadrant band are measured from the measurement results anechoic chamber.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.41-48
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• 2002

This paper presents a 18-mW, 2.5-㎓ fractional-N frequency synthesizer with l-bit $4^{th}$-order interpolative delta-sigma ($\Delta{\;}$\sum$)modulator to suppress fractional spurious tones while reducing in-band phase noise. A fractional-N frequency synthesizer with a quadruple prescaler has been designed and implemented in a $0.5-\mu\textrm{m}$ 15-GHz $f_t$ BiCMOS. Synthesizing 2.1 GHzwith less than 200 Hz resolution, it exhibits an in-band phase noise of less than -85 dBc/Hz at 1 KHz offset frequency with a reference spur of -85 dBc and no fractional spurs. The synthesizer also shows phase noise of -139 dBc/Hz at an offset frequency of 1.2 MHz from a 2.1GHz center frequency.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.267-273
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• 2007

A fractional-N frequency synthesizer supports quadruple bands and multiple standards for mobile broadcasting systems. A novel linearized coarse tuned VCO adopting a pseudo-exponential capacitor bank structure is proposed to cover the wide bandwidth of 65%. The proposed technique successfully reduces the variations of KVCO and per-code frequency step by 3.2 and 2.7 times, respectively. For the divider and prescaler circuits, TSPC (true single-phase clock) logic is extensively utilized for high speed operation, low power consumption, and small silicon area. Implemented in $0.18-{\mu}m$ CMOS, the PLL covers $154{\sim}303$ MHz (VHF-III), $462{\sim}911$ MHz (UHF), and $1441{\sim}1887$ MHz (L1, L2) with two VCO's while dissipating 23 mA from 1.8 V supply. The integrated phase noise is 0.598 and 0.812 degree for the integer-N and fractional-N modes, respectively, at 750 MHz output frequency. The in-band noise at 10 kHz offset is -96 dBc/Hz for the integer-N mode and degraded only by 3 dB for the fractional-N mode.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.77-82
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• 2019

In this paper, a 0.6~6GHz quad-ridge horn antenna which can be used for the antenna measurement of 5.8GHz WiFi system from lowest frequency band of mobile LTE (Long Term Evolution) is designed and implemented. The quad-ridge horn antenna has quadruple ridges of exponential function, a back-short and a cavity. Based on this structure, we design the cavity size, ridge gap and feed gap to have broadband characteristics. For implementation, the plates material of aluminum and copper are used for the horn and four ridges, respectively. And the insulator supports are used to maintain the gap between ridges. By measurement, antenna has the gain of 6.2~13.35dBi with the return loss of less than -6dB (under VSWR 3 : 1) in the entire design band. The results of this study can be widely used to the antenna studies on the mobile communication including low frequency band of LTE, the EMI measurement and the standard calibration measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.