• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.122-132
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• 1998

Characteristics of inductively coupled Cl2/O2 and Cl2/N2 plasmas and their effects on the formation of submicron deep trench etching of single crystal silicon have been investigated using Langmuir probe, quadrupole mass spectrometer (QMS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), Also, when silicon is etched with oxygen added chlorine plasmas, etch products recombined with oxygen such as SiClxOy emerged and Si-O bondings were found on the etched silicon surface. However, when nitrogen is added to chlorine, no etch products recombined with nitrogen nor Si-N bondings were found on the etched silicon surface. When deep silicon trenches were teached, the characteristics of Cl2/O2 and Cl2/N2 plasmas changed the thickness of the sidewall residue (passivation layer) and the etch profile. Vertical deep submicron trench profiles having the aspect ratio higher than 5 could be obtained by controlling the thickness of the residue formed on the trench sidewall using Cl2(O2/N2) plasmas.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.54-54
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• 2003

MgO layer는 POP 패빌 내 유전증을 이온의 스퍼터링으로부터 보호하여 주며, 또한 높은 이차 전자 밤출 계수의 특성을 가지고 있어 구동 및 유지 전압을 낮춰 주는 역할을 한다. 그러나. MgO layer는 $H_20,{\;}CO_2,{\;}N_2,{\;}0_2$ 그리고 $H_2$와 같은 불순물 들을 쉽게 를착하는 단점이 있어, PDP의 특성 및 수명 단축에 영향을 줄 수 있다. 따라서, 본 연구에서는 atmospheric pressure plasma cleaning 과 low pressure i inductively coupled plasma (ICP) cleaning 처리에 의하여, 보호층으로 사용이 되는 MgO layer의 outgassing 특성을 조사하고자 한다. plasma cleaning에 의한 MgO layer 표면의 roughness와 불순물의 변화를 알아보기 위 하여 atomic force microscopy(AFM)과 x-ray p photoelectron spectroscopy(XPS)를 이용하여 측정 하였다. 또한, outgassing의 특성을 분석하기 위하여 MgO layer를 $400^{\circ}C$ 까지 온도를 가하여 온도에 따른 outgassing의 특성을 quadrupole mass spectrometer(QMS)를 이용하여 알아보았다. atmospheric pressure plasma cleaning 에서는 $He/O_2/Ar/N_2$의 gas를 사용하였으며, low pressure ICP cleaning 에 서는 Ar의 gas를 사용하였다. atmospheric pressure plasma cleaning는 low pressure ICP C cleaning과 비교해 더 낮은 outgassing을 관잘 할 수 있었으나. MgO 표면의 roughness는 low pressure ICP cleaning 후 더 낮은 것을 알 수 있었다. 또한 $He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다.

• Journal of Navigation and Port Research
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• v.45 no.5
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• pp.231-237
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• 2021

Enhancing the performance of maritime wireless communication has been highlighted by the issue of cell planning in the sea area because of lack of an appropriate Propagation Loss Model (PLM). To resolve the cell planning issue in vast sea areas, it was essential to develop the (PLM) matching the intended sea area. However, there were considerable gaps between the prediction of legacy PLMs and field measurement in propagation loss and there was a need to develop the adjusted PLM (A-PLM). Therefore, cell planning was performed on this adjusted model, including modification of the base station's location, altitude, and antenna azimuth to meet the quality objectives. Furthermore, in order to verify the availability of the cell planning, Communication Service Quality Monitoring System (CS-QMS) was developed in the LTE-Maritime project to collect LTE signal quality information from the onboard equipment at regular intervals and to ensure that the service quality was high enough to satisfy the goals in each designated grid. As a result of verification, the success rate of RSRP was 95.7% for the intensive management zone (IMZ) and 96.4% for the interested zone (IZ), respectively.

• Analytical Science and Technology
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• v.22 no.2
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• pp.152-158
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• 2009

In this study, we made a new discharge source improving previous SPI source to ionize softly organic compounds. The new SPI source consists of two electrodes as a hollow mesh cathode of half cylindrical shape and a hollow anode. We optimized the geometrical parameter of the SPI source by investigating the I-V curves at the various distance between the cathode and the anode. As the results, we found stable conditions of the soft plasma on broad range of the current and the voltage. The new SPI source attached to quadrupole mass spectrometer (QMS), and we obtained the mass spectra of dichloromethane (DCM). The fragment patterns of DCM appeared similarly with the pattern of electron ionization (EI).

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.72-75
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• 2023

Carbon neutrality has been emerged as important mission for all the manufacturing industry to reduce energy usage and carbon emission equivalent. Korean semiconductor and display manufacturing industries are also in huge interest by minimize the energy usage as well as to find a less global warming product gases in both etch and cleaning. In addition, Korean government is also investing long term research and development plan for the safe environment in various ways. In this paper, we revisit previous research activities on carbon emission equivalent and current research activities performed in semiconductor process diagnosis research center at Myongji University with respect to the reduction of NF3 usage for the PECVD chamber cleaning, and we present the analytical result of the exhaust gas with residual gas analysis in both 6 inches and 12 inches PECVD equipment. The presented result can be a reference study of the development of new substitution gas in near future to compare the cleaning rate of the silicon oxide deposition chamber.

• Journal of the Korean Society for Library and Information Science
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• v.38 no.3
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• pp.85-101
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• 2004

The revolution of information in information society innovates a lot of business processes. and the renewed processes contribute new paradigms of the 21th century. As one of the revolutions, ISO 9000 becomes a standard for developing efficient quality management systems which provide any-time and any-where environments satisfying customer needs. Thus, it becomes important to research on quality management systems for improving quality in information flowing and service domain. In this paper, we describe the applicable direction and the case study of ISO 9001 : 2000 which establishes quality management systems in the domain and hope to help for the Quality enhancement.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.298-307
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• 1997

TDS(Thermal Desorption Spectroscopy)system, for diagnosis of CRT manufacturing process, was designed and constructed. Outgassings and thermal desorptions from the part or materials of CRT can be measured and analysed with this system at various temperatures. The system is consisted of 3 parts, vacuum chamber and pumping system with variable conductance, sample heating stages & their controller, and outgassing measurement devices, like as ion gauge or quadrupole mass spectrometer. The ultimate pressure of the system was under $1{\times}10^{-7}$ Pa. With the variable conductance system, the effective pumping speed of the chamber could be controlled from sub l/s to 100 l/s. The effective pumping speed values were determined by dynamic flow measurement principle. The temperatures and ramp rate of sample were controlled by tungsten heater and PID controller up to 600℃ within ±1℃ difference to setting value. Ion gauge & QMS were calibrated for quantitative measurements. Some examples of TDS measurement data and application on the CRT process analysis were shown.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.308-313
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• 1997

TDS (Thermal Lkso~ption Spectroscopy)system, for diagnosis of CRT manufacturing process, was designed and constructed. Outgassings and themla1 desorptions from the part or materials of CRT can be measured and analysed with this system at various temperatures. The system is consisted of 3 pirrts. vacuum chamher and pumping system with variable conductance, sample heating stages & their controller, and outgassing measurement devices, like as ion gauge or quadrupole mass spectrometer. The ultimate pressure of the system was under $1\times10^{-7}$ Pa. With the variable conductance system, the effective pumping speed of the chamber could he controlled from sub 11s to 100 11s. The effective pumping speed values were determined by dynamic flow measurement principle. The temperatures and ramp rate of sample were controlled by tungsten heater and PID controller up to $600^{\circ}C$ within t $\pm 1^{\circ}C$$difference to setting value. Ion gauge & QMS were calibrated for quantitative measurements. Some examples of TDS measurement data ;ind application on the CRT process analysis were shown.

• The Journal of the Korea Contents Association
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• v.15 no.10
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• pp.468-480
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• 2015

The FTA between South Korea and China has been concluded in 2014. This means that there is high possibility of the economic integration in Northeast Asia. China's rapid growth has led the global economy, and the Northeast Asia has been attracting attention as the main market. Although the South Korean government cannot help continuing the overseas market-oriented policies, South Korea's construction orders in the Northeast Asia are insignificant, and their profitability is still low. It is time for South Korean construction industry to promote qualitative growth instead of quantitative growth. South Korean construction industry have to focus more on quality management to produce high-quality construction output. In order to support South Korean construction industry, Korean government needs to provide more advanced national quality management system. Therefore, this study compares national quality management systems in South Korea, Japan, and China, and suggests the direction of the South Korean national quality management system reform. In addition, another objective of this study is to confirm the importance of an ISO9001 based quality management system as a basis of the economic integration in Northeast Asia.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.249-249
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• 1999

GaN과 같은 III-nitride 반도체 관한 식각 기술의 연구는 blue-emitting laser diode(LD)를 위한 경면(mirror facet)의 형성뿐만아니라 새로운 display 용도의 light emitting diodes (LED), 고온에서 작동되는 광전소자 제조 등에도 그 중요성이 증대되고 있다. 최근에는 III-nitride 물질의 높은 식각속도와 미려하고 수직한 식각형상을 이루기 위하여 ECR(Electron Cyclotron Resonance)이나 ICP(Inductively Coupled Plasma)와 같은 고밀도 플라즈마 식각과 CAIBE(Chemically assisted ion beam etching)를 이용한 연구가 진행되고 있다. 현재 제조되어 지고 있는 LED 및 LD와 같은 광소자의 구조의 대부분은 p-GaN/AlGaN/InGaN(Q.W)/AlGaN/n-GaN 와 같은 여러 층의 형태로 이루어져 있다. 이중 InGaN는 광소자나 전자소자의 특성에 영향을 주는 가장 중요한 부분으로써 현재까지 보고된 식각연구는 undoped GaN에 대부분 집중되고 있고 이에 비해 소자 특성에 핵심을 이루는 InGaN의 식각특성에 관한 연구는 미흡한 상황이다. 본 연구에서는 고밀도 플라즈마원인 ICP 장비를 이용하여 InGaN를 식각하였고, 식각에는 Cl2/CH4, Cl2/Ar 플라즈마를 사용하였다. InGaN의 식각특성에 영향을 미치는 플라즈마의 특성을 관찰하기 위하여 quadrupole mass spectrometry(QMS)와 optical emission spectroscopy(PES)를 사용하였다. 기판 온도는 5$0^{\circ}C$, 공정 압력은 5,Torr에서 30mTorr로 변화시켰고 inductive power는 200~800watt, bias voltage는 0~-200voltage로 변화시켰으며 식각마스크로는 SiO2를 patterning 하여 사용하였다. n-GaN, p-GaN 층 이외에 광소자 제조시 필수적인 InGaN 층을 100% Cl2로 식각한 경우에 InGaN의 식각속도가 GaN에 비해 매우 낮은 식각속도를 보였다. Cl2 gas에 소량의 CH4나 Ar gas를 첨가하는 경우와 공정압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%Ar 플라즈마에서 공정 압력을 감소시키는 경우 식각속도는 증가하였고, Cl2/10%CHF3 와 Cl2/10%Ar 플라즈마에서 공정압력을 15mTorr로 감소시키는 경우 InGaN과 GaNrks의 선택적인 식각이 가능하였다. InGaN의 식각속도는 Cl2/Ar 플라즈마의 이온에 의한 Cl2/CHF3(CH4) 플라즈마에서의 CHx radical 형성에 의하여 증가하는 것으로 사료되어 진다.