• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.393-398
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• 2019

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.215-215
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• 2014

Red color light emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, oxygen plasma treatment on the ITO surface was performed to improve the interfacial contact between ITO anode and the hole injection layer. CdSe/CdZnS quantum dots were cross-linked to remove their surrounded organic surfactants. The device shows red emission at 622 nm, which is consistent with the dimension of the QDs (band gap=1.99 eV). The luminance shows 6026% improvement compared with that of LEDs fabricated without oxygen plasma treatment and quantum dots cross-linking process. This approach would be useful for the fabrication of high-performance QLEDs with ITO electrode and PEDOT:PSS hole injection layers.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Journal of Powder Materials
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• v.31 no.2
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• pp.169-179
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• 2024

Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.65-65
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• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).