• Current Photovoltaic Research
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• v.3 no.4
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• pp.126-129
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• 2015

Over the last two decades, quantum dot (QD) solar cells have attracted much attention due to the unique properties of QDs, including band gap tunability, slow hot electron cooling, and multiple exiton generation effect. However, most of the QDs employed in photovoltaic devices contain toxic heavy-metals such as cadmium or lead, which may limit the commercial application. Therefore, recently, heavy-metal-free QDs such as Cu-In-S or Cu-In-Se have been developed for application in solar cells. Here, we review the research trends in heavy-metal-free QD solar cells, mainly focusing on Cu-In-Se QD-sensitized solar cells (QDSC).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.92-92
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• 2010

Replacing the existing illumination with solid-state lighting devices, such as light-emitting diodes (LEDs) are expected to reduce energy consumption and environmental pollution as they provide better efficiency and longer lifetimes. Currently, white light emitting diodes are composed of UV or blue LED with down-converting materials such as highly luminescent phosphors White light-emitting diodes (LED) were fabricated with multi-shell nanocrystal quantum dots for enhanced luminance and improved stability over time. Multi-shell quantum dots (QDs) were synthesized through one pot process by using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. As prepared, the multi-shell QD has cubic lattice of zinc-blend structure with semi-spherical shape with quantum yield of higher than 60 % in solution. Further, highly fluorescent multi-shell QD was deposited on the blue LED, which resulted in QD-based white LED with high luminance with excellent color rendering properties.

• Proceedings of the Korea Information Processing Society Conference
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• 2023.11a
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• pp.1061-1062
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• 2023

양자 CMOS 이미지와 QD-OLED 하이드로겔 저온 증폭 기술을 활용하여 기존 코로나 진단법의 한계를 극복하고, Machine Learning 모델을 통해 자동화된 바이러스 검출 시스템을 개발하는 것이다. 이를 통해 전문가 개입 없이도 높은 정확도로 질병 진단을 수행하는 웹 서비스를 구축함으로써, 코로나와 같은 전염병의 조기 진단과 효율적인 대응을 위한 새로운 도구를 제공하는 것이 목표이다. 이를 통해 의료 분야에서의 혁신과 질병관리의 향상에 기여할 것으로 기대된다.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.86-91
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• 2013

The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.

• Analytical Science and Technology
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• v.28 no.1
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• pp.33-39
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• 2015

CdS-QD particles are a nano-sized semiconducting crystal that emits light. Their optical properties show great potential in many areas of applications such as disease-diagnostic reagents, optical technologies, media industries and solar cells. The wavelength of emitting light depends on the particle size and thus the quality control of CdS-QD particle requires accurate determination of the size distribution. In this study, CdS-QD particles were synthesized by a simple ${\gamma}$-ray irradiation method. As a particle stabilizer polyvinyl pyrrolidone (PVP) were added. In order to determine the size and size distribution of the CdS-QD particles, sedimentation field-flow fractionation (SdFFF) was employed. Effects of carious parameters including the the flow rate, external field strength, and field programming conditions were investigated to optimize SdFFF for analysis of CdS-QD particles. The Transmission electron microscopy (TEM) analysis show the primary single particle size was ~4 nm, TEM images indicate that the primarty particles were aggregated to form secondary particles having the mean size of about 159 nm. As the concentration of the stabilizer increases, the particle size tends to decrease. Mean size determined by SdFFF, TEM, and dynamic light scattering (DLS) were 126, 159, and 152 nm, respectively. Results showed SdFFF may become a useful tool for determination of the size and its distribution of various types of inorganic particles.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.251-252
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• 2008

We fabricated silica glass optical fiber containing PbSe quantum-dots (QD) of average size 3.2 nm. The response time of the PbSe-QD doped optical fiber was measured to be around 200 ps. However, after exposure to 1064 nm laser emission for 15 minutes, the response time dramatically reduced to around 2.5 ps, which may be due to photo-darkening effect.

• Information Display
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• v.24 no.2
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• pp.3-6
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• 2023

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.284-284
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• 2009

We have fabricated semiconductor nanocrystals using phase separation on flexible substrates for future application in QD-LEDs. The phase separation between the CdSe semiconductor nanocrystals and TPD organic underlayer can occur during the solvent drying, and the CdSe may rise towards the surface of the coated films, which is arranged into close packed array called self-assembly process. In this work, the polyethylene naphthalate (PEN) films of $200{\mu}m$ thickness was used as a flexible substrate, which was coated with indium tin oxide(ITO) as a transparent electrode of <$15{\Omega}/cm^2$. A number of solvents such as chloroform, toluene, and hexane was used and their coating properties were investigated using the spin coating process. The dispersion of both QD and TPD was rather poor in toluene and hexane and resulted in rougher surface and some aggregates. Meanwhile, the surface roughness of templates can be a very critical issue in the fabrication of QD-LED devices. Some experiments was performed to reduce the ~4nm surface roughness of the PEN films and It can be decreased to the minimum of ~0.7nm. Also discussed are the optical properties of semiconductor nanocrystals used in this phase separation and possible large area and continuous coating process for future application.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.208-212
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• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.