• 제목/요약/키워드: QD

검색결과 239건 처리시간 0.08초

AlAs 에피층 위에 성장된 InAs 양자점의 Photoluminescence 특성연구 (Photoluminescence Characteristics of InAs Quantum Dots Grown on AlAs Epitaxial Layer)

  • 김기홍;심준형;배인호
    • 한국재료학회지
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    • 제19권7호
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    • pp.356-361
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    • 2009
  • The optical characterization of self-assembled InAs/AlAs Quantum Dots(QD) grown by MBE(Molecular Beam Epitaxy) was investigated by using Photoluminescence(PL) spectroscopy. The influence of thin AlAs barrier on QDs were carried out by utilizing a pumping beam that has lower energy than that of the AlAs barrier. This provides the evidence for the tunneling of carriers from the GaAs layer, which results in a strong QD intensity compared to the GaAs at the 16 K PL spectrum. The presence of two QDs signals were found to be associated with the ground-states transitions from QDs with a bimodal size distribution made by the excitation power-dependent PL. From the temperature-dependent PL, the rapid red shift of the peak emission that was related to the QD2 from the increasing temperature was attributed to the coherence between the QDs of bimodal size distribution. A red shift of the PL peak of QDs emission and the reduction of the FWHM(Full Width at Half Maximum) were observed when the annealing temperatures ranged from 500 $^{\circ}C$ to 750 $^{\circ}C$, which indicates that the interdiffusion between the dots and the capping layer was caused by an improvement in the uniformity size of the QDs.

Heterojunction Quantum Dot Solar Cells Based on Vertically Growth TiO2 Anatase Nanorod Arrays with Improved Charge Collection Property

  • Chung, Hyun Suk;Han, Gill Sang;Park, So Yeon;Lee, Dong Geon;Jung, Hyun Suk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.466.2-466.2
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    • 2014
  • The Quantum dot (QD) solar cells have been under active research due to their high light harvesting efficiencies and low fabrication cost. In spite of these advantages, there have been some problems on the charge collection due to the limitation of the diffusion length. The modification of advanced nanostructure is capable of solving the charge collection problem by increasing diffusion length of electron. One dimensional nanomaterials such as nanorods, nanowires, and nanotubes may enhance charge collection efficiency in QD solar cells. In this study, we synthesized $TiO_2$ anatase nanorod arrays with length of 200 nm by two-step sol-gel method. The morphology and crystal structure for the nanorod were characterized by using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD). The anatase nanorods are single-crystalline and possess preferred orientation along with (001) direction. The photovoltaic properties for the heterojunction structure QD solar cells based on the anatase nanorod were also characterized. Compared with conventional $TiO_2$ nanoparticle based QD solar cells, these nanostructure solar cells exhibited better charge collection properties due to long life time measured by transient open circuit studies. Our findings demonstrate that the single crystalline anatase nanorod arrays are promising charge transport semiconductors for heterojunction QD solar cells.

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SIMS Study on the Diffusion of Al in Si and Si QD Layer by Heat Treatment

  • Jang, Jong Shik;Kang, Hee Jae;Kim, An Soon;Baek, Hyun Jeong;Kim, Tae Woon;Hong, Songwoung;Kim, Kyung Joong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.188.1-188.1
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    • 2014
  • Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

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전기전도도(電氣傳導度) 측정(測定)에 의한 유우(乳牛) 준임상형(準臨床型) 유방염(乳房炎)의 진단(診斷)에 관한 연구(硏究) 1. 전기전도도법(電氣傳導度法)과 간접검진법(間接檢診法)(CMT 및 총체세포수(總體細胞數))과의 비교(比較) (Studies on the Diagnosis of Subclinical Mastitis in Cows by the Measurement of the Electrical Conductivity: 1. Comparison of Various Methods of Handling Conductivity Data with the Use of California Mastitis Test and Direct Somatic Cell Count)

  • 강병규
    • 대한수의학회지
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    • 제24권1호
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    • pp.91-98
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    • 1984
  • A total of 466 foremilk from dairy farms in Chonnam district was examined for the subclinical mastitis over a period of one year, using a method of the electrical conductivities(EC); absolute conductivity(AC) and differential conductivity(DC) and quarter difference value(QD), in relation to the California mastitis test(CMT) and the direct somatic cell count(DSCC). The compatibility and efficiency rating between the EC values and the other screening tests was conducted. Obtained results are summarized as follows. 1. A linear relationship was found between the EC values and the CMT scores and direct somatic cell counts and it was found that electrical conductivity measurements were comparable with other screening tests for diagnosing animals with mastitis. 2. Compatibilities between the EC and CMT were 70.4% in AC, 74.6% in DC and 70.7% in QD, and that of the EC and DSCC were 53.0% in AC, 63.1% in DC and 53.2% in QD. On the other hand, relative efficiency ratings of Postle's equation between EC and CMT were 37.3% in AC, 26.5% in DC and 13.6% in QD, and that of the EC and DSCC were 33.1% in AC, 20.2% in DC and 11.9% in QD. 3. In the foremilk samples collected from damaged quarters determined by EC, the false positive rate wart higher than the false negative rate, and consequently tests of EC produced lower compatibility or efficiency rating scores. These tendencies suggested that any factors other than the mastitic condition influencing the EC values might be existed.

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양자점 입도제어를 통한 양자점 감응형 태양전지 단락전류 향상 (Improvement of Short-Circuit Current of Quantum Dot Sensitive Solar Cell Through Various Size of Quantum Dots)

  • 지승환;윤혜원;이진호;김범성;김우병
    • 한국재료학회지
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    • 제31권1호
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    • pp.16-22
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    • 2021
  • In this study, quantum dot-sensitized solar cells (QDSSC) using CdSe/ZnS quantum dots (QD) of various sizes with green, yellow, and red colors are developed. Quantum dots, depending their different sizes, have advantages of absorbing light of various wavelengths. This absorption of light of various wavelengths increases the photocurrent production of solar cells. The absorption and emission peaks and excellent photochemical properties of the synthesized quantum dots are confirmed through UV-visible and photoluminescence (PL) analysis. In TEM analysis, the average sizes of individual green, yellow, and red quantum dots are shown to be 5 nm, 6 nm, and 8 nm. The J-V curves of QDSSC for one type of QD show a current density of 1.7 mA/㎠ and an open-circuit voltage of 0.49 V, while QDSSC using three type of QDs shows improved electrical characteristics of 5.52 mA/㎠ and 0.52 V. As a result, the photoelectric conversion efficiency of QDSSC using one type of QD is as low as 0.53 %, but QDSSC using three type of QDs has a measured efficiency of 1.4 %.

전자차단층 도입을 통한 전체 용액공정 기반의 역구조 InP 양자점 발광다이오드의 성능 향상 (Improved Performance of All-Solution-Processed Inverted InP Quantum Dot Light-Emitting Diodes Using Electron Blocking Layer)

  • 노희재;이경은;배예윤;이재엽;노정균
    • 센서학회지
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    • 제33권4호
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    • pp.224-229
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    • 2024
  • Quantum dot light-emitting diodes (QD-LEDs) are emerging as next-generation displays owing to their high color purity, wide color gamut, and solution processability. Enhancing the efficiency of QD-LEDs involves preventing non-radiative recombination mechanisms, such as Auger and interfacial recombination. Generally, ZnO serves as the electron transport layer, which is known for its higher mobility compared to that of organic semiconductors and can lead to excessive electron injection. Some of the injected electrons pass through the quantum dot emissive layer and undergo non-radiative recombination near or within the organic hole transport layer (HTL), resulting in HTL degradation. Therefore, the implementation of electron blocking layers (EBLs) is essential; however, studies on all-solution-processed inverted InP QD-LEDs are limited. In this study, poly(9-vinylcarbazole) (PVK) is introduced as an EBL to mitigate HTL degradation and enhance the emission efficiency of inverted InP QD-LEDs. Using a single-carrier device, PVK was confirmed to effectively inhibit electron overflow into the HTL, even at extremely low thicknesses. The optimization of the PVK thickness also ensured minimal disruption of the hole-injection properties. Consequently, a 1.5-fold increase in the maximum luminance was achieved in the all-solution-processed inverted InP QD-LEDs with the EBL.

An On-line Rotor Resistance Estimator for Induction Machine Drives

  • Kwon, Chun-Ki
    • Journal of Power Electronics
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    • 제9권3호
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    • pp.354-364
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    • 2009
  • Rotor resistance variation due to changing rotor temperature is a significant issue in the design of induction motor controls. In this work, a new on-line rotor resistance estimator is proposed based on an alternate qd induction machine model which provides better mathematical representation of an induction machine than the classical qd model (which uses constant parameters). This is because the former simultaneously includes leakage saturation, magnetizing path saturation, and distributed circuit effects in the rotor conductors. The comparisons via computer simulation studies show the ability of the proposed estimator to accurately track rotor resistance variation. For the experimental studies, due to the difficulty in measuring the actual rotor resistance, comparison of the controller performance using the proposed estimator, the classical qd model based estimator, and no estimator is made.

Luminescent Polynorbornene/Quantum Dot Composite Nanorods and Nanotubes Prepared from AAO Membrane Templates

  • Oh, Se-Won;Cho, Young-Hyun;Char, Kook-Heon
    • Macromolecular Research
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    • 제17권12호
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    • pp.995-1002
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    • 2009
  • Luminescent polynorbornene (PNB)/quantum dot (CdSe@ZnS; QD) composite nanorods and nanotubes were successfully prepared using anodic aluminum oxide (AAO) membranes of various pore sizes as templates. To protect QDs with high quantum yield from quenching during the phosphoric acid treatment used to remove the AAO templates, chemically stable and optically clear norbornene-maleic anhydride copolymers (P(NB-r-MA)) were employed as a capping agent for QDs. The amine-terminated QDs reacted with maleic anhydride moieties in P(NB-r-MA) to form PNB-grafted QDs. The chemical- and photo-stability of QDs encapsulated with PNB copolymers were investigated by photoluminescence (PL) spectroscopy. By varying the pore size of the AAO templates from 40 to 380 urn, PNB/QD composite nanorods or nanotubes were obtained with a good dispersion of QDs in the PNB matrix.

White Light Emission with Quantum Dots: A Review

  • Kim, Nam Hun;Jeong, Jaehak;Chae, Heeyeop
    • Applied Science and Convergence Technology
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    • 제25권1호
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    • pp.1-6
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    • 2016
  • Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

Self-Assembled InAs Quantum Dots on InP(001) for Long-Wavelength Laser Applications

  • Kim, Jin-Soo;Lee, Jin-Hong;Hong, Sung-Ui;Kwack, Ho-Sang;Lee, Chul-Wook;Oh, Dae-Kon
    • ETRI Journal
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    • 제26권5호
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    • pp.475-480
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    • 2004
  • Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

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