• Title/Summary/Keyword: QD

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Low-temperature synthesis of nc-Si/a-SiNx: H quantum dot thin films using RF/UHF high density PECVD plasmas

  • Yin, Yongyi;Sahu, B.B.;Lee, J.S.;Kim, H.R.;Han, Jeon G.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.341-341
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    • 2016
  • The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

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Eco-Friendly Light Emitting Diodes Based on Graphene Quantum Dots and III-V Colloidal Quantum Dots

  • Lee, Chang-Lyoul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.65-65
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    • 2015
  • In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

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Fabrication and Characterization of Si Quantum Dots in a Superlattice by Si/C Co-Sputtering (실리콘과 탄소 동시 스퍼터링에 의한 실리콘 양자점 초격자 박막 제조 및 특성 분석)

  • Kim, Hyun-Jong;Moon, Ji-Hyun;Cho, Jun-Sik;Park, Sang-Hyun;Yoon, Kyung-Hoon;Song, Jin-Soo;O, Byung-Sung;Lee, Jeong-Chul
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.289-293
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    • 2010
  • Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

Structural and Optical Properties of Self-assembled InAs/InAl(Ga)Ae Quantum Dots on InP (InP 기판에 성장한 자발형성 InAs/InAl(Ga)As 양자점의 구조 및 광학적 특성)

  • Kim Jin-Soo;Lee Jin-Hong;Hong Sung-Ui;Kwack Ho-Sang;Choi Byung-Seok;Oh Dae-Kon
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.194-200
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    • 2006
  • Self-assembled InAs/InAl(Ga)As quantum dots (QDs) were grown on InP substrates by a molecular-beam epiaxy, and their structural and optical properties were investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and room-temperature photoluminescence (PL). AFM images indicated that the InAs quantum structures showed various shapes such as quantum dashes, asymmetric and symmetric QDs mainly caused by the initial surface conditions of InAl(Ga)As with the intrinsic phase separation. For the buried InAs QDs in an InAlGaAs matrix, the average lateral size and height of QDs were 23 and 2 nm, respectively. By changing the growth conditions for the QD samples, the emission wavelength of $1.55{\mu}m$ was obtained, which is one of the wavelength windows for fiber optic communications.

Anomalous Effect of Hydrogenation on the Optical Characterization $In_{0.5}Ga_{0.5}As$ Quantum Dot Infrared Photodetectors (MBE로 성장된 $In_{0.5}Ga_{0.5}As/GaAs$ 양자점 원적외선 수광소자의 수소화 처리가 광학적 특성에 미치는 특이영향)

  • Lim J.Y.;Song J.D.;Choi W.J.;Cho W.J.;Lee J.I.;Yang H.S.
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.223-230
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    • 2006
  • We have investigated the characteristics of hydrogen (H) plasma treated quantum dot infrared photodetectors (QDIPs). The structure used in this study consists of 3 stacked, self assembled $In_{0.5}Ga_{0.5}As/GaAs$ QD layer separated by GaAs barrier layers that were grown by molecular beam epitaxy. Optical characteristics of QDIPs, such as photoluminescence (PL) spectra and photocurrent spectra, have been studied and compared with each other for the as grown and H plasma treated QDIPs. H plasma treatment, resulted in the splitting of PL peak, which can be attributed to the redistribution of the size of QDs. The activation energies estimated from the temperature dependence of integrated PL intensity for as grown and H plasma treated QDIPs are found to be in good agreement with those determined from corresponding peaks of photocurrent spectra. It is also noted that photocurrent is detected up to 130 K for the H plasma treated QDIP, suggesting the future possibility for the development of infrared photodetectors with high temperature operation.

Performance of Adaptive Maximum Torque Per Amp Control at Multiple Operating Points for Induction Motor Drives (유도전동기 드라이브에서의 단위전류당 최대토크적응 제어기의 다운전점에서의 성능 연구)

  • Kwon, Chun-Ki;Kong, Yong-Hae
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.3
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    • pp.584-593
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    • 2018
  • The highly efficient operation of induction motors has been studied in the past years. Among the many attempts made to obtain highly efficient operation, Maximum Torque Per Amp (MTPA) controls in induction motor drives were proposed. This method enables induction motor drives to operate very efficiently since it achieves the desired torque with the minimal stator current. This is because the alternate qd induction motor model (AQDM) is a highly accurate mathematical model to represent the dynamic characteristics of induction motors. However, it has been shown that the variation of the rotor resistance degrades the performance of the MTPA control significantly, thus leading to its failure to satisfy the maximum torque per amp condition. To take into consideration the mismatch between the actual value of the rotor resistance and its parameter value in the design of the control strategy, an adaptive MTPA control was proposed. In this work, this adaptive MTPA control is investigated in order to achieve the desired torque with the minimum stator current at multiple operating points. The experimental study showed that (i) the desired torque was accurately achieved even though there was a deviation of the order of 5% from the commanded torque value at a torque reference of 25 Nm (tracking performance), and (ii) the minimum stator current for the desired torque (maximum torque per amp condition) was consistently satisfied at multiple operating points, as the rotor temperature increased.

Analysis of Subwavelength Metal Hole Array Structure for the Enhancement of Quantum Dot Infrared Photodetectors

  • Ha, Jae-Du;Hwang, Jeong-U;Gang, Sang-U;No, Sam-Gyu;Lee, Sang-Jun;Kim, Jong-Su;Krishna, Sanjay;Urbas, Augustine;Ku, Zahyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.334-334
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    • 2013
  • In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

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Clinical Application of Recombinant Human Endostatin in Postoperative Early Complementary Therapy on Patients with Non-small Cell Lung Cancer in Chinese Mainland

  • Zhu, Qiang;Zang, Qi;Jiang, Zhong-Min;Wang, Wei;Cao, Ming;Su, Gong-Zhang;Zhen, Tian-Chang;Zhang, Xiao-Tian;Sun, Ning-Bo;Zhao, Cheng
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.9
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    • pp.4013-4018
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    • 2015
  • Objective: To explore the clinical application of recombinant human endostatin (Endostar) in the treatment of patients with non-small cell lung cancer (NSCLC) in Chinese mainland. Materials and Methods: A total of 75 patients diagnosed as NSCLC were randomly divided into control group (37 cases) and treatment group (38 cases). Control group was treated with postoperative complementary chemotherapy containing two-agent platinum protocol on postoperative d21, 3 weeks as a cycle, for totally 4~6 cycles. On this basis, treatment group was added with Endostar $7.5mg/m^2$ on postoperative d8~9, 3~4 h/time, qd, 14 weeks as a cycle, for totally 4 cycles. The interval between every two cycles was 7 d. The 5-year progression-free survival (PFS), 5-year survival time and complications in both groups were observed. Results: Compared with control group, the average PFS increased evidently in treatment group by 9.8 months (41.6 months vs. 31.8 months), and there was significant difference (P<0.05). And the median PFS was 42.5 months in treatment group, obviously longer than that in control group (33.7 months) by 8.8 months (P<0.05). Additionally, the 5-year overall survival rate (OS), average survival time and median survival time (MST) were 47.4%, 50.1 months and 59.3 months in treatment group, significantly higher than the 29.7%, 42.1 months and 43.5 months in control group (P<0.05). Only 1 patient showed poor healing of surgical wound in treatment group, but no surgery-associated complication was found in control group. Moreover, the postoperative complementary therapy-connected complication rates were 63.2% (24/38) and 59.5% (22/37) in treatment group and control group respectively, but there was no significant difference (P>0.05). Conclusions: The application of Endostar combined with sensitive platinum-contained chemotherapeutic agents in the postoperative complementary chemotherapy can be widely used in clinic because it can significantly prolong the long-term survival time of patients with NSCLC.

Applications of XPS and SIMS for the development of Si quantum dot solar cell

  • Kim, Gyeong-Jung;Hong, Seung-Hwi;Kim, Yong-Seong;Lee, U;Kim, Yeong-Heon;Seo, Se-Yeong;Jang, Jong-Sik;Sin, Dong-Hui;Choe, Seok-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.297-297
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    • 2010
  • Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

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A Developmont of Numerical Mo del on the Estimation of the Log-term Run-off for the Design of Riverheads Works -With Special Reference to Small and Medium Sijed Catchment Areas- (제수원공 설계를 위한 장기간 연속수수량 추정모형의 개발 - 중심유역을 중심으로)

  • 엄병현
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.29 no.4
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    • pp.59-72
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    • 1987
  • Although long-term runoff analysis is important as much as flood analysis in the design of water works, the technological level of the former is relatively lower than that of the latter. In this respect, the precise estimation model for the volume of successive runoff should he developed as soon as possible. Up to now, in Korea, Gajiyama's formula has been widely used in long-term runoff analysis, which has many problems in applying in real situation. On the other hand, in flood analysis, unit hydrograph method has been exclusively used. Therefore, this study aims at trying to apply unit hydrograph method in long-term runoff analysis for the betterment of its estimation. Four test catchment areas were selected ; Maesan area in Namlum river as a representative area of Han river system, Cheongju area in Musim river as one of Geum river system, Hwasun area in Hwasun river as one of Yongsan river system, and Supyung area in Geum river as one of Nakdong river system. In the analysis of unit hydrograph, seperation of effective rainfall was carried out firstly. Considering that effective rainfall and moisture condition of catchrnent area are inside and outside of a phenomenon respectively and the latter is not considered in the analysis, Initial base flow(qb)was selected as an index of moisture condition. At the same time, basic equation(Eq.7) was established, in which qb can take a role as a parameter in relating between cumulative rainfall(P) and cumulative loss of rainfall(Ld). Based on the above equation, computer program for estimation model of qbwas seperately developed according to the range of qb, Developed model was applied to measured hydrographs and hyetographs for total 10 years in 4 test areas and effective rainfall was estimated. Estimation precision of model was checked as shown in Tab- 6 and Fig.8. In the next stage, based on the estimated effective rainfall(R) and runoff(Qd), a runoff distribution ratio was calculated for each teat area using by computerised least square method and used in making unit hydrographs in each test area. Significance of induced hydrographs was tested by checking the relative errors between estimated and measured runoff volume(Tab-9, 10). According to the results, runoff estimation error by unit hydrograph itself was merely 2 or 3 %, but other 2 or 3 % of error proved to be transferred error in the seperation of effective rainfall. In this study, special attentioning point is that, in spite of different river systems and forest conditions of test areas, standardized unit hydrographs for them have very similar curve shape, which can be explained by having similar catchinent characteristics such as stream length, catchinent area, slope, and vegetation intensity. That fact should be treated as important factor ingeneralization of unit hydrograph method.

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