• 제목/요약/키워드: Q-switched laser

검색결과 110건 처리시간 0.024초

Nd:YVO4 Laser Patterning of Various Transparent Conductive Oxide Thin Films on Glass Substrate at a Wavelength of 1,064 nm

  • Wang, Jian-Xun;Kwon, Sang Jik;Cho, Eou Sik
    • Transactions on Electrical and Electronic Materials
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    • 제14권2호
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    • pp.59-62
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    • 2013
  • At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

평판디스플레이를 위한 Indium Tin Oxide의 레이저 페터닝 (Laser Patterning of Indium Tin Oxide for Flat Panel Display)

  • 안민영;이경철;이천
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.340-343
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    • 2000
  • ITO(Indium Tin Oxide) films for transparent electrodes of FPD(Flat Panel Display) were patterned in atmosphere using laser. A pulse type(repetition rate of 10 Hz) Q-switched Nd:YAG laser which can generate the fundamental wavelength at 1064 nm or its harmonics(532, 266 nm) was used for Patterning of the ITO film. In case of using the second harmonic(532 nm) of Nd:YAG laser, the ITO film(thickness of 20 nm) was removed clearly with a laser fluence of 5.2 J/$\textrm{cm}^2$ and a beam scan speed of 200${\mu}{\textrm}{m}$/s. But the glass substrate was damaged when the laser fluence was over 5.2 J/$\textrm{cm}^2$. We discussed the etching mechanism of the ITO film using Nd:YAG laser with observation of the etching characteristics including a depths and widths of ITO films as a function of laser fluence using SEM(Scanning Electron Microscopy) and surface profiler($\alpha$-step 500).

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$LiNbO_3$:MgO 결정에서 광굴절 격자의 회절 특성 (Diffractive characteristics of the photorefractive gratings in $LiNbO_3$:MgO)

  • 이재철;장지웅;김준태;신승호
    • 한국광학회지
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    • 제10권5호
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    • pp.391-395
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    • 1999
  • 4% 물의 MgO가 도핑된 광굴절 $LiNbO_3$ 결정에 기록된 광굴절 격자의 회절 효율과 응답시간을 측정하였다. 이 실험에는 고출력 펄스 Nd:YAG 레이저(Q-switch mode,$\lambda$=532nm)와 연속 발진 아르곤 이온 레이저($\lambda$=514.5nm)가 사용되었다. 두 종류의 레이저 광속에 대한 실험에서 광학계의 배열을 동일하게 하고 2광파 혼합 조건에서 레이저 광속의 세기를 1.6~100W/$\textrm{cm}^2$까지 변화시켜가며 최대 회절 효율과 기록 및 소거시의 응답시간을 측정하였다. 두 실험에서 얻은 결과를 비교하고 분석 하였다.

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고리형 어븀첨가 광섬유 레이저의 수동형 모드로킹에 관한 연구 (A Study on the Passive Modelocking of Ring Type Er-doped Fiber laser)

  • 한두희
    • 한국산학기술학회논문지
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    • 제1권2호
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    • pp.63-68
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    • 2000
  • 어븀 첨가된 고리형 광섬유 레이저를 제작하여 외부 조절기를 적용하지 않은 수동형 모드로킹을 구현하였다. 모드로킹 현상은 단일 모드로킹 과정과 이중 모드로킹 과정이 관측되었고 분산천이 광섬유의 길이를 변화시켜 65 fs의 시간폭을 갖는 초단 펄스를 얻었다. 한편 고차조화모드로킹과 Q스위치된 고차조화 모드로킹도 구현하였는데, 연속파 고차조화 모드로킹은 17차까지 구현하였으며, 펌프 전력의 감소가 연속파 고차 조화 모드로킹에서 Q스위치된 고차조화 모드로킹으로 변화시키며 이러한 과정이 편광조절기에 의해서도 이루어 졌다 이러한 일련의 초단 펄스열의 연구는 광통신용 신호원으로 개발에 중요한 역할을 한다.

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레이저 어블레이션에 의해 증착된 비정질 다이아몬드 박막의 결합및 물리적 특성 (Bonding and Physical Characteristics of Diamond-like Carbon Films Prepared by Laser Ablation)

  • 박환태;홍영규;김재기;김진승;박찬
    • 한국진공학회지
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    • 제5권1호
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    • pp.1-5
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    • 1996
  • Noncrystalline films of diamond-like carbon (DLC) have been prepared by laser ablation technique at room temperature. A Q-switched Nd-YAG laser beam with wavelength of 1064 nm and pulse duration of 10 ns was focused onto a graphite target with power densities of about $10^9 W/\textrm{cm}^2$. The physical properties of the resulting films were analyzed with density, hardness, and resistivity measurements. The surface and bonding structure were investigated by atomic force microscopy (AFM), Raman spectroscopy, electron energy loss spectroscopy (EELS).

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Nd:YAG 레이저를 이용한 polyoxymethylene 표면의 마이크로 딤플가공 및 특성에 관한 연구 (Characteristics of micro-dimple formed on polyoxymethylene surface by Nd:YAG laser texturing technique)

  • 조민행;이재봉;이성혁;김주한
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.193-197
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    • 2008
  • Array of micro-dimple on polyoxymethylene (POM) surface was fabricated using Q-switched Nd:YAG laser and its characteristics were studied in terms of heat affected zone (HAZ), dimple geometry, and the effect of specimen surface roughness. Process parameters such as lamp current, process time, and the stream of air in order to minimize HAZ and flow of molten polymer into cavity were extensively studied in this work. Dimple geometry was further investigated by 3-D optical microscopy to provide deep insight into morphological analysis near the dimples. This paper also presents the applicapability of micro-dimples in polymeric tribological system, such as a thrust bearing. Micro-dimples were expected to provide low coefficient of friction and enhanced lubricity at the sliding interface.

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High -Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AlN/SiC Templates

  • Kim, S.;Bang, B.S.;Ren, F.;d'Entremont, J.;Blumenfeld, W.;Cordock, T.;Pearton, S.J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권3호
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    • pp.217-221
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    • 2004
  • [ $CO_2$ ]laser ablation rates for bulk 4H-SiC substrates and GaN/AIN/SiC templates in the range 229-870 ${\mu}m.min^{-1}$ were obtained for pulse energies of 7.5-30 mJ over diameters of 50·500 ${\mu}m$ with a Q-switched pulse width of ${\sim}30$ nsec and a pulse frequency of 8 Hz. The laser drilling produces much higher etch rates than conventional dry plasma etching (0.2 - 1.3 ${\mu}m/min$) making this an attractive maskless option for creating through-wafer via holes in SiC or GaN/AlN/SiC templates for power metal-semiconductor field effect transistor applications. The via entry can be tapered to facilitate subsequent metallization by control of the laser power and the total residual surface contamination can be minimized in a similar fashion and with a high gas throughput to avoid redeposition. The sidewall roughness is also comparable or better than conventional via holes created by plasma etching.

High-speed angular-scan pulse-echo ultrasonic propagation imager for in situ non-destructive evaluation

  • Abbas, Syed H.;Lee, Jung-Ryul
    • Smart Structures and Systems
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    • 제22권2호
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    • pp.223-230
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    • 2018
  • This study examines a non-contact laser scanning-based ultrasound system, called an angular scan pulse-echo ultrasonic propagation imager (A-PE-UPI), that uses coincided laser beams for ultrasonic sensing and generation. A laser Doppler vibrometer is used for sensing, while a diode pumped solid state (DPSS) Q-switched laser is used for generation of thermoelastic waves. A high-speed raster scanning of up to 10-kHz is achieved using a galvano-motorized mirror scanner that allows for coincided sensing and for the generation beam to perform two-dimensional scanning without causing any harm to the surface under inspection. This process allows for the visualization of longitudinal wave propagation through-the-thickness. A pulse-echo ultrasonic wave propagation imaging algorithm (PE-UWPI) is used for on-the-fly damage visualization of the structure. The presented system is very effective for high-speed, localized, non-contact, and non-destructive inspection of aerospace structures. The system is tested on an aluminum honeycomb sandwich with disbonds and a carbon fiber-reinforced plastic (CFRP) honeycomb sandwich with a layer overlap. Inspection is performed at a 10-kHz scanning speed that takes 16 seconds to scan a $100{\times}100mm^2$ area with a scan interval of 0.25 mm. Finally, a comparison is presented between angular-scanning and a linear-scanning-based pulse-echo UPI system. The results show that the proposed system can successfully visualize defects in the inspected specimens.

수동 큐스위칭 Nd:YAG 레이저에서 포화흡수체 Cr4+:YAG의 초기 광흡수 효과와 출력 특성 (The characteristics of the passively Q-switched Nd:YAG laser output energy with the initial absorbing effect of Cr4+:YAG absorber)

  • 최영수;윤주홍;김기홍
    • 한국광학회지
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    • 제13권4호
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    • pp.340-346
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    • 2002
  • 초기투과도 0.48과 0.38인 포화흡수체 $Cr^{4+}$: YAG를 사용한 수동 큐스위칭 Nd:YAG 공진기에서 포화흡수의 초기 광흡수 효과로 낮은 Q-상태에서 나타나는 포화흡수체의 투과 광손실 변화와 더불어 레이저 매질의 펌핑된 밀도반전 상태를 분석하였다. 포화흡수체의 초기 광흡수로 수동 큐스위칭 열림동작때 나타나는 포화흡수체의 투과도는 각각 0.70$\pm$0.01과 0.62$\pm$0.01이었다. 이는 큐스위칭 레이저 공진기의 초기 광손실이 간소함을 의미한다. 큐스위칭 열림동작 시점에서 측정된 두 $Cr^{4+}$:YAG의 기저상태 $Cr^{4+}$ 밀도수는 약 1.4${\times}{10^{17}}$$cm^{-3}$이고 기저상태에 대한 여기상태의 $Cr^{4+}$이온밀도수의 비는 약 44%이었다. 또, 큐스위칭 펄스 발생을 위해 펌핑된 최소 반전밀도수는 각각 3.6${\times}{10^{17}}$과 3.9${\times}{10^{17}}$ $cm^{-3}$이고 양자추출효율은 두 경우 모두 약 0.32였다. 낮은 Q-상태에서 나타나는 포화흡수체의 광흡수 효과를 고려한 수동 큐스위칭 레이저 출력에너지의 수정 이론값은 각각 18과 18.5 mJ로 측정된 실험값 약 17$\pm$1과 18$\pm$1.5mJ과 잘 일치함을 보였다.