• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.276-280
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• 2009

A Cr:YAG crystal was used as a saturable absorber for passive Q-switching of a Nd:$YVO_4$ laser which was pumped by a 1-W continuous wave laser diode. The first surface of the Cr:YAG was high-reflection coated for the pump wavelength. The high-reflection coating improved the absorption efficiency of the pump beam in the Nd:$YVO_4$ through double pass absorption. It also prevented pump beam induced partial bleaching of the Cr:YAG. The peak-to-peak pulse fluctuation of passively Q-switched laser output was approximately 4 %. The minimum pulse-width was measured to be 7.11 ns. Also, the average pulse repetition rate was 9 kHz and the maximum output power was 16.27 mW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.133-136
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• 2010

Laser direct patterning is one of new methods which are able to replace a conventional photolithography. In order reduce the fabrication cost and to improve the luminous efficiency of AC plasma display panels (PDPs), in this experiment, a Q-switched Nd:$YVO_4$ laser was used to fabricate T-shaped indium tin oxide (ITO) display electrodes. For the laser beam scanning speed from 100 mm/sec to 800 mm/sec, T-shaped ITO patterns were clearly obtained and investigated. The experimental results showed that the optimized T-shaped ITO electrode was obtained when the lasers scanning speed was 300 mm/s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.377-380
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• 2012

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.72-76
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• 2019

A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO₄, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.894-898
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• 2013

Zinc oxide(ZnO) was sputtered on various glass and flexible substrates such as polyethylene terephthalate(PET) and polycarbonate(PC). A Q-switched $Nd:YVO_4$ laser with a wavelength of 1,064 nm was used for the direct etching of ZnO films. It was possible to obtain laser etched line patterns on the ZnO films on PC substrate at some specific laser beam conditions. In the flexible substrates, more thermal energy of laser beam is expected to be spreaded for the etching process.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.6-11
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• 2019

For a wider application of laser direct patterning, selective laser ablation of indium tin oxide (ITO) film on transparent oxide semiconductor (TOS) thin film was carried out using a diode-pumped Q-switched Nd:YVO₄ laser at a wavelength of 1064 nm. In case of the laser ablation of ITO on indium gallium zinc oxide (IGZO) film, both of ITO and IGZO films were fully etched for all the conditions of the laser beams even though IGZO monolayer was not ablated at the same laser beam condition. On the contrary, in case of the laser ablation of ITO on zinc oxide (ZnO) film, it was possible to etch ITO selectively with a slight damage on ZnO layer. The selective laser ablation is expected to be due to the different coefficient of thermal expansion (CTE) between ITO and ZnO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.707-711
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• 2016

ITO/Ag/ITO conductive films on PET (polyethylene terephthalate) was etched by a Q-switched diode-pumped neodymiun-doped yttrium vanadate (Nd:YVO4, ${\lambda}=1064nm$) laser. During the laser direct etching, the laser beam was incident on the two different directions of PET and the etching patterns were investigated and analyzed. At a lower repetition rate of laser pulse, the larger laser etched patterns were obtained by laser beam incident on reverse side of PET substrate. On the contrary, at a higher repetition rate, it was possible to find the larger etched patterns in case of the laser beam incidence on forward side of PET substrate. For the laser beam incidence on reverse side, the laser beam is expected to be transferred and scattered through the PET substrate and the laser beam energy is thought to be dependent on the etch laser pulse beam energy.

• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.192-195
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• 2007

A high-conversion efficiency, nanosecond pulsed optical parametric generation and amplification with repetition rate of 20 kHz based on a periodically poled MgO-doped stoichiometric lithium tantalate was presented. Pumped by a Q-switched $Nd:YVO_4$ laser at 1064 nm with a pumping power of 4.8W, the generated output power was 1.6W for the signal and idler waves, achieving a slope efficiency of 50%. Using a seed source at signal wave the amplified signal output-pulse energy reached $65{\mu}J$. The obtained maximum gain was 72.4 dB.