• Title/Summary/Keyword: Q값(Q-factor)

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Studies of Magnetic Properties of Ni-Zn-Cu Ferrite with Low Loss and High Permeability (저손질, 고투자율을 갖는 Ni-Zn-Cu ferrite의 자기적 특성 연구)

  • 김용복;고재귀
    • Journal of the Korean Magnetics Society
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    • v.8 no.2
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    • pp.62-66
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    • 1998
  • We have studied on the magnetic properties of the specimen with additives Bi$_2$O$_3$and$V_2O_5$ that sintered at 900 $^{\circ}C$ for 4 hours for sybthesizing optimal Ni-Zn-Cu ferrite. Curie temperature rises from 240 $^{\circ}C$ to 270 $^{\circ}C$ as Ni contents increase. Magentic maximum induction$(B_m)$ increases from 2650 G to 3300 G, 3500 G in the specimens with $V_2O_5$ and Bi$_2$O$_3$resectively. On the contrary coercive force $(H_c)$ lowers to 2.05 Oe~1.05 Oe. Permeability all increase in the specimen with additives. In the specimen with additive Bi$_2$O$_3$, we have obtained the low relative loss factor of $6.3{\times}10^{-5}~7.84{\times}10^{-5}$ in the range of 1MHz due to increase of resistivity in grain boundary. In the specimen with additive $V_2O_5$ in spite of increase permeability relative loss factor increase of due to decrease of Q-value.

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KSLV-I FTS 적용을 위한 UHF 전력분배기 설계 및 제작

  • Hwang, Soo-Sul;Lim, You-Chol;Lee, Jae-Deuk
    • Aerospace Engineering and Technology
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    • v.4 no.2
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    • pp.171-191
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    • 2005
  • This Technical Memo(TM) was written for the purpose of determining the type of UHF-band power divider which is applicable to KSLV-1. For this, some different kinds of power divider are compared with there types and characteristics. And then, we select three types of power divider(which is Wilkinson power divider, Quadrature hybrid divider and Ring hybrid divider) and perform Schematic and Momentum simulation for finding the optimized characteristics. With this results, in order to demonstrate the selected power divider, we manufactured UHF-band power dividers using FR-4 epoxy plate. By the measured results, we obtain the similar results compare with simulation and fabrication. And Quadrature hybrid power divider is suitable to application to KSLV-1.

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Low Phase Noise VCO Using the Metamaterial Broadside Coupled Spiral Resonator (메타 구조 Broadside Coupled 나선형 공진기를 이용한 저위상 잡음 전압 제어 발진기)

  • Han, Kyoung-Nam;Seo, Chul-Hun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.9
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    • pp.961-966
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    • 2009
  • In this paper, a novel voltage-controlled oscillator(VCO) using the metamaterial broadside coupled spiral resonators(BC-DSRs) is presented for reducing the phase noise. For reducing of the phase noise, the series spiral structures have been applied for the signal plane and ground plane at each in order to have the large coupling. Compared with the conventional VCO, the proposed VCO has the larger coupling coefficient constant, which makes a higher Q-factor and has reduced the phase noise of the VCO. The proposed VCO has the phase noise of $-121{\sim}-117.16\;dBc$/Hz at 100 kHz in the tuning range, $5.749{\sim}5.853\;GHz$. The figure of merit(FOM) of this VCO is $-198.45{\sim}-194.77\;dBc$/Hz at 100 Hz in the same tuning range, respectively.

A Study on the Out-of-Band Rejection Improvement of TFBAR Ladder Filter using On-Wafer Inductors (기판상의 인덕터를 이용한 박막 공진 여파기의 대역 외 저지특성 개선 연구)

  • 김종수;구명권;육종관
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.3
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    • pp.284-290
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    • 2004
  • In this paper, two types of thin nim bulk acoustic resonator(TFBAR) ladder filters are desisted and fabricated to analyze the effects of on-wafer inductor integration. To suppress the overmode phenomenon a 1 $\mu\textrm{m}$ thick air-gap is fabricated under the TFBAR and aluminum nitride is used for piezoelectric material, while platinum is employed for the top and bottom electrodes. The Tx filter in a duplexer, which usually has a steeper skirt characteristics o the right side of the passband, is designed with four serial and two shunt resonators, namely, a 4/2 stage. Similarly, the Rx filter is devised with a 3/4 stage to create a mirrored image of the Tx filter passband characteristics. Fabricated on-wafer spiral inductors with underpass reveals the Q factor of 5~9 at 2 ㎓. Inductor integrated filters have approximately 10 to 12 ㏈ out-of-band rejection improvement, when compared to the original filters.

Trial Maunfacture of Planar Type Micro Inductors (평면형 마이크로인덕터의 시작에 관한 연구)

  • 김종오;강희우;김영학;김동연;오호영
    • Journal of the Korean Magnetics Society
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    • v.6 no.6
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    • pp.367-374
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    • 1996
  • The developmement of electronic machine industries requires miniature of size as well as increasement of driving frequency in electronic parts, recently. To realize micro-struture of magnetic devices, in this study, we fabricated thin film inductors by using thin film manufacturing techniques such as photolithography and wet etching process, and these devices are measured at high frequency range of 1 MHz~1 GHz. The results are as follows. The accurate measuring technique by using network analyzer system having microstrip line was established. The manufactured inductors are fabricated with several ten micrometers by means of wet etching process known as easier and more economic than dry etching process. VVhen the device size of two types (spiral, meander) is the same, inductance value L and quality factor Q of spiral type devices are larger than those of meander type, but driving frequency of spiral type is lower than that of meander type due to increasement of inductance L. It is necessary to decrease resistance value R by increasing cross section of the conductor film coil. Thus high frequency measuring method would be a very useful for another measuring fields of the range over several hundreds MHz.

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All-Optical Gray Code to Binary Coded Decimal Converter (전광 그레이코드 이진코드 변환기)

  • Jung, Young-Jin;Park, Nam-Kyoo;Jhon, Young-Min;Woo, Deok-Ha;Lee, Seok
    • Korean Journal of Optics and Photonics
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    • v.19 no.1
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    • pp.60-67
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    • 2008
  • An all-optical 4-bit Gray code to binary coded decimal (BCD) converter by means of commercially available numerical analysis tool (VPI) was demonstrated, for the first time to our knowledge. Circuit design approach was modified appropriately in order to fit the electrical method on an all-optical logic circuit based on a cross gain modulation (XGM) process so that signal degradation due to the non-ideal optical logic gates can be minimized. Without regenerations, Q-factor of around 4 was obtained for the most severely degraded output bit (least significant bit-LSB) with 2.5 Gbps clean input signals having 20 dB extinction ratio. While modifying the two-level simplification method and Karnaugh map method to design a Gray code to BCD converter, a general design concept was also founded (one-level simplification) in this research, not only for the Gray code to BCD converter but also for any general applications.

Fabrication of GHz-Band FBAR with AIN Film on Mo/SiO2/Si(100) Using MOCVD (Mo/SiO2/Si(100)기판 위에 MOCVD법으로 성장시킨 AIN박막이용 GHz대역의 FBAR제작에 관한 연구)

  • Yang, Chung-Mo;Kim, Seong-Kweon;Cha, Jae-Sang;Park, Ku-Man
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.4
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    • pp.7-11
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    • 2006
  • In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

A Funding Source Decision on Corporate Bond - Private Placements vs Public Bond - (기업의 회사채 조달방법 선택에 관한 연구 - 사모사채와 공모사채 발행을 중심으로 -)

  • An, Seung-Cheol;Lee, Sang-Whi;Jang, Seung-Wook
    • The Korean Journal of Financial Management
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    • v.21 no.2
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    • pp.99-123
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    • 2004
  • We focus in this study on incremental financing decisions and estimate a logit model for the probability a firm will choose a private placement over a public bond issue. We hypothesize that information asymmetry, financial risk, agent cost, and proprietary information may affect a firm's choice between public debt and private placements. We find that as the size of firm increases, the probability of choosing a private placement declines significantly. The age of the firm, however, is not a significant factor affecting the firm's choice between public and privately-placed bond. The coefficients on the firm's leverage and non-investment grade dummy are significantly positive, meaning firms with high financial risk and credit risk select private placements. The findings regarding agency-related variables, PER and Tobin's Q, are somewhat complex. We find significant evidence that firms with high PER prefer private placements to public bonds, suggesting that borrowers with options to engage in asset substitution or underinvestment are more likely to choose private placements. The coefficient of Tobin's Q is negative, but not significant, which weakly support the hold-up hypothesis. When we construct an interaction term on the Tobin's Q with a non-investment rating dummy, however, the Tobin's Q interaction term becomes positive and significant. Thus, high Tobin's Q firms with a speculative rating are significantly more likely to choose a private placement, regardless of the potential hold-up problems. The ratio of R&D to sales, proxy for proprietary information, is positively significant. This result can be interpreted as evidence in favor of a role for proprietary information in the debt sourcing decision process for these firms.

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Integrated Photonic Microwave Bandpass Filter Incorporating a Polymer Microring Resonator (폴리머 마이크로링 공진기를 이용한 광학적 마이크로웨이브 대역통과 필터)

  • Chin, Won-Jun;Kim, Do-Hwan;Song, Ju-Han;Lee, Sang-Shin
    • Korean Journal of Optics and Photonics
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    • v.16 no.5
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    • pp.469-475
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    • 2005
  • An integrated photonic microwave bandpass filter has been proposed and demonstrated incorporating a coherently coupled microring resonator in low-loss polymers. The proposed device may feature compact site, simple structure, tuning via the thermooptic and electrooptic effect, and flexible integration with other electrical and optical devices. The resonator was designed to have an extremely small bandwidth so that it could be used to selectively pass the optical signal carrying the microwave signal to attain efficient bandpass filtering. We made and tested two resonators with a single ring and double rings, and performed a theoretical fitting of their measured transfer curves to predict the performance of the microwave filters based on them precisely. It was found that as the number of the rings used for the resonator increases, the bandwidth gets smaller, the rolloff sharper, and the band rejection higher. Finally our filter exhibited the center frequency of 10GHz, the 3-dB bandwidth of 1.0GHz, the corresponding quality (Q) factor of 10, and the rejection outside of the passband of more than 25dB.

Design of X-Band SOM for Doppler Radar (도플러 레이더를 위한 X-Band SOM 설계)

  • Jeong, Sun-Hwa;Hwang, Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.12
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    • pp.1167-1172
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    • 2013
  • This paper presents a X-band doppler radar with high conversion gain using a self-oscillating-mixer(SOM) that oscillation and frequency mixing is realized at the same time. To improve phase noise of the SOM oscillator, a ${\lambda}/2$ slotted square patch resonator(SSPR) was proposed, which shows high Q-factor of 175.4 and the 50 % reduced circuit area compared to the conventional resonator. To implement the low power system, low biasing voltage of 1.7 V was supplied. To enhance the conversion gain of the SOM, bias circuit is configured near the pinch-off region of transistor, and the conversion gain was optimized. The output power of the proposed SOM was -3.16 dBm at 10.65 GHz. A high conversion gain of 9.48 dB was obtained whereas DC Power consumption is relatively low about 7.65 mW. The phase noise is -90.91 dBc/Hz at 100 kHz offset. The figure-of-merit(FOM) of the proposed SOM was measured as -181.8 dBc/Hz, which is supplier to other SOMs by more than about 7 dB.