• 센서학회지
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• 제10권2호
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• pp.86-90
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• 2001

A pyroelectric senior using P(VDF/TrFE) film for sensing materials has been fabricated and evaluated with other commercial pyroelectric sensors that use ceramic materials for sensing. The device was mounted in a TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $2.13{\times}10^{-8}\;W$ and $9.37{\times}10^6\;cm/w$ respectively under emission energy of $13\;{\mu}W/cm^2$ respectively. These result shows a better characteristics than other commercial pyroelectric sensors NEP $8.08{\times}10^{-7}\;W$ and $D^*$ $2.47{\times}10^5\;cm/w$.

• KIEE International Transactions on Electrophysics and Applications
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• 제12C권4호
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• pp.225-228
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• 2002

The pyroelectric sensor of P(VDF/TrFE) film as sensing materials has been fabricated and evaluated with another commercial pyroelectric sensor using ceramic materials for sensing, The device was mounted in TO-5 housing to detect infrared light of a 5.5~14 ${\mu}{\textrm}{m}$ wavelength. The NEP(noise equivalent power) and specific detectivity D* of the device were 2.13$\times$10$^{-8}$ W and 9.37 10$^{6}$ cm/W under emission energy of 13 ㎼/$\textrm{cm}^2$, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.36-36
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• 2002

• 센서학회지
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• 제6권1호
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• pp.1-5
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• 1997

La가 첨가된 $PbTiO_{3}(PLT)$ 박편을 이용하여 압전효과에 대한 보상이 이루어진 고감도 초전형 적외선 센서를 제작하였다. 센서는 두 개의 $1{\times}2\;mm^{2}$의 cell을 인접하게 나란히 설치하고 적절히 전극을 배열한 이중소자 형태로 제작하였으며, 제작된 센서는 단일 소자형 센서에 비하여 잡음 특성이 향상되어 신호대 잡음비가 350에 이르렀다. 나아가 2400 V/W 이상의 전압감도, $4.6{\times}10^{-8}\;C/cm^{2}K$의 초전계수 및 $4.2{\times}10^{-11}\;Ccm/J$의 전압 성능지수와 8.7 msec의 작은 열시상수 특성들을 보였다. 제작된 초전형 적외선 센서는 적절한 매치를 통하여 인체의 이차원적 이동방향의 감지에 응용할 수 있음을 실험을 통하여 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.605-608
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• 1998

In this paper, we have investigated the pyroelectric characteristics of the $20\mu\textrm{m}-thick$ $LiTaO_3$ single crystal with black coating by using the nondestructive dynamic method. The $LiTaO_3shows$ the maximum pyroelectric coefficient (${\gamma}$) of $1.56$\times$10-8C/\textrm{cm}^2K$ at 40Hz and the responsivity (Rv) is 488V/W at 2Hz. The noise equivalent power (NEP) is obtained as 3.95$\times$10-10W/√Hz at 40Hz. The detectivity (D*) is obtained divided by the sample area and estimated to be 5.6$\times$108cm√Hz/W at 40Hz. These results, shows that the $LiTaO_3$ single crystals are the best candidates to pyroelectric IR sensors.

• 대한전자공학회논문지SD
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• 제39권10호
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• pp.35-42
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• 2002

Modulation frequency dependences of the pyroelectric properties of PLT (P $b_{1-x}$ L $a_{x}$ $Ti_{1-x}$ 4/ $O_3$) thin films with La concentrations of 5, 10 and 15㏖% have been investigated by using the dynamic method. The PLT thin film with 10㏖% of the La concentration (PLT(10) thin film) shows the most excellent pyroelectric properties among the films. For PLT(10) thin film, the pyroelectric coefficient shows the maximum value of 6.6$\times$10$^{-9}$ C/$\textrm{cm}^2$ㆍK without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03$\times$10$^{-11}$ Cㆍcm/J and 1.46$\times$10$^{-9}$ Cㆍcm/J, respectively. Voltage responsivity corresponding to the pyroelectric voltage is almost constant at low modulation frequency and decreases in proportional to frequency at high modulation frequency. Voltage responsivity is 5.15 V/W at 8Hz. Noise equivalent power (NEP) and specific detectivity ( $D^{*}$) of the PLT(10) thin film are 9.93$\times$10$^{-8}$ W/H $z^{1}$2/ and 1.81$\times$10$^{6}$ cmH $z^{1}$2/W at the frequency of 100Hz, respectively. The results indicate that PLT(10) thin film is very suitable for pyroelectric IR sensors.s.s.

• 센서학회지
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• 제5권1호
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• pp.1-8
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• 1996

고감도 초전형 적외선 센서를 La이 첨가된 $PbTiO_{3}$(PLT) 박편을 이용하여 제작하였다. 재료의 조성비는 $(Pb_{0.9}La_{0.1}Ti_{0.75}O_3)_{0.75}(PbO)_{0.25}$ 이고 PLT 박편의 두께는 $100{\mu}m$로 제작하였다. 수광전극은 니켈-크롬을, 그리고 하부 전극으로는 은을 각각 $1{\times}2\;mm^{2}$ 크기로 진공 증착 하였다. PLT 박편의 전기적 특성은 341 정도의 유전상수와 $6.41{\times}10^{10}{\Omega}{\cdot}cm$의 매우 큰 비저항 값을 얻었다. c-축으로 쌍극자가 형성된 PLT 박편은 높은 초전 특성을 나타내었으며, $4.45{\times}10^{-8}\;C/cm^{2}K$의 초전계수에 기인하여 $4.0{\times}10^{-11}\;Ccm/J$의 큰 전압 성능지수를 얻을 수 있었다. PLT 박편으로 제작된 센서는 2501 V/W의 높은 전압감도를 가지는 것으로 보아 초전형 적외선 센서의 응용이 가능하리라고 본다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.