• Title/Summary/Keyword: Pure-Zr

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A study on the Low Resistance Aluminum-Molybdenum Alloy for stretchable metallization (스트레처블 배선용 저저항 알루미늄-몰리브데늄 합금에 대한 연구)

  • Min-Jun-Yi;Jin-Won-Bae;Su-Yeon-Park;Jae-Ik-Choi;Geon-Ho-Kim;Jong-Hyun-Seo
    • Journal of the Korean institute of surface engineering
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    • v.56 no.2
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    • pp.160-168
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    • 2023
  • Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

Formation of Anodic Films on Pure Mg and Mg alloys for Corrosion Protection

  • Moon, Sungmo;Nam, Yunkyung
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.16-16
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    • 2012
  • Mg and its alloys have been of great interest because of their low density of 1.7, 30% lighter than Al, but their wide applications have been limited because of their poor resistances against corrosion and/or abrasion. Corrosion resistance of Mg alloys can be improved by formation of anodic films using anodic oxidation method in aqueous electrolytes. Plasma electrolytic oxidation (PEO) is one of anodic oxidation methods by which hard anodic films can be formed as a result of micro-arc generation under high electric field. PEO method utilize not only substrate elements but also chemical components in electrolytes to form anodic films on Mg alloys. PEO films formed on AM50 magnesium alloy in an acidic fluozirconate electrolyte were observed to consist of mainly $ZrO_2$ and $MgF_2$. Liu et al reported that PEO coating on AM30 Mg alloy consists of $MgF_2$-rich outer porous layer and an MgO-rich dense inner layer. PEO films prepared on ACM522 Mg die-casting alloy in an aqueous phosphate solution were also reported to be composed of monoclinic $Mg_3(PO_4)_2$. $CeO_2$-incorporated PEO coatings were also reported to be formed on AZ31 Mg alloys in $CeO_2$ particle-containing $Na_2SiO_3$-based electrolytes. Magnesium tin hydroxide ($MgSn(OH)_6$) was also produced on AZ91D alloy by PEO process in stannate-containing electrolyte. Effects of $OH^-$, $F^-$, $PO{_4}^{3-}$ and $SiO{_3}^{2-}$ ions and alloying elements of Al and Sn on the formation of PEO films on pure Mg and Mg alloys and their protective properties against corrosion have been investigated in this work. $PO{_4}^{3-}$, $F^-$ and $SiO{_3}^{2-}$ ions were observed to contribute to the formation of PEO films but $OH^-$ ions were found to break down the surface films under high electric field. The effect of pulse current on the formation of PEO films will be also reported.

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Amperometric Glucose Biosensor Based on Sol-Gel-Derived Zirconia/Nafion Composite Film as Encapsulation Matrix

  • Kim, Hyun-Jung;Yoon, Sook-Hyun;Choi, Han-Nim;Lyu, Young-Ku;Lee, Won-Yong
    • Bulletin of the Korean Chemical Society
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    • v.27 no.1
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    • pp.65-70
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    • 2006
  • An amperometric glucose biosensor has been developed based on the use of the nanoporous composite film of sol-gel-derived zirconia and perfluorosulfonated ionomer, Nafion, for the encapsulation of glucose oxidase (GOx) on a platinized glassy carbon electrode. Zirconium isopropoxide (ZrOPr) was used as a sol-gel precursor for the preparation of zirconia/Nafion composite film and the performance of the resulting glucose biosensor was tuned by controlling the water content in the acid-catalyzed hydrolysis of sol-gel stock solution. The presence of Nafion polymer in the sol-gel-derived zirconia in the biosensor resulted in faster response time and higher sensitivity compared to those obtained at the pure zirconia- and pure Nafion-based biosensors. Because of the nanoporous nature of the composite film, the glucose biosensor based on the zirconia/Nafion composite film can reach 95% of steady-state current less than 5 s. In addition, the biosensor responds to glucose linearly in the range of 0.03-15.08 mM with a sensitivity of 3.40 $\mu$A/mM and the detection limit of 0.037 mM (S/N = 3). Moreover, the biosensor exhibited good sensor-to-sensor reproducibility (~5%) and long-term stability (90% of its original activity retained after 4 weeks) when stored in 50 mM phosphate buffer at pH 7 at 4 ${^{\circ}C}$.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Piezoelectric and Dielectric Characteristics of Low Loss Low Temperature Sintering PMN-PNN-PZT Ceramics with the amount of PNN Substitution (PNN 치환량에 따른 저손실 저온소결 PMN-PNN-PZT 세라믹스의 압전 및 유전특성)

  • Yoo, Ju-Hyun;Kim, Kook-Jin;Jeong, Yeong-Ho;Lee, Su-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.9
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    • pp.766-770
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    • 2007
  • In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, $0.07Pb(Mn_{1/3}Nb_{2/3})O_3-xPb(Ni_{1/3}Nb_{2/3})O_3-(0.93-x)Pb(Zr,Ti)O_3$ ceramics system were fabricated using $Li_2CO_3-Bi_2O_3-CuO$ sintering aids and the specimens were sintered at $930^{\circ}C$. Thereafter, their piezoelectric and dielectric characteristics were investigated according to the amount of PNN substitution. At 9 mol% PNN substitution, density, electromechanical coupling factor ($k_p$), dielectric constant, mechanical quality factor ($Q_m$) and piezoelectric constant ($d_{33}$) showed the optimum value of $7.86g/cm^3$, 0.60, 1640, 1323 and 387 pC/N, respectively. It is considered that these values are suitable for piezoelectric divece application such ad multilayer piezoelectric actuator and ultrasonic vibrator with pure Ag internal electrode.

Texturing of Cu Sheets and Fabrication of Oxide Buffer Layers for YBCO Superconductor Films (YBCO 초전도체막을 위한 Cu 판의 배향화 및 중간 산화층의 제조)

  • Kim, Myeong-Hui;Kim, Eun-Gene;Han, Sang-Chul;Sung, Tae-Hyun;Kim, Sang-Joon;No, Kwang-Soo
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.352-357
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    • 1999
  • The Cu sheets were selected for the substrate of the superconductor films. Pure Cu sheets with the thickness of 50${\mu}$m were fabricated using hot and cold rolling. The Cu sheets were heat treated to induce the biaxial texturing. The z-axis and x-y plane texturing of Cu sheets heat treated at different conditions were analyzed using XRD and a best heat treatment condition for the texturing was selected. ZrO$_2$ film was dip coated on Cu sheets heat treated at the best condition to prevent possible reaction between Cu sheets and YBCO superconductors, to reduce possible cracking due to thermal expansion mismatch and to decrease the lattice mismatch for biaxial texturing. The texturing of the oxide buffer layers were also studied.

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A study on the pure Al weldability using a pulsed Nd : YAG laser (펄스형 Nd:YAG 레이저를 이용한 Al의 용접 특성연구)

  • 김덕현
    • Journal of Welding and Joining
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    • v.11 no.1
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    • pp.52-61
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    • 1993
  • Laser welding of ASTM no. 1060 Al plate with a pulsed Nd: YAG laser of 200W average power was performed for end capping of KMRR nuclear fuel elements In this research, we performed basic welding experiments. Firstly, laser output parameters which affect laser welding parameters were studied by changing laser input parameters for effective welding of 1060 Al plates. We found that laser power density and pulse energy are important parameters for smooth bead shape. Secondly, welding parameters which affect weld width-to-depth ratio were studied by changing power density and pulse energy, shielding gas, and defocusing. We found that power density must be higher than 0.3 Mw/cm$^{2}$ pulse energy must be higer than 3 J. travel speed must not exceed 200mm/sec, laser focus must be existed beneath 2-3mm from plate surface and helium is proper shielding gas. Thirdly, we studied the weld defects of Al-1060 such as crack and porosity in lap-joint welding. We designed new welding geometry for crack free welding of Al-1060 plates, and obtained crack free weldment but with lack of fusion. However, with Ti, Zr grain refiner elements, we can weld Al plates without solidification hot crack. Finally, we studied the origin of porosity by changing shielding gas. And we found that porosity was resulted from entrapment of shielding gas by the collapsing keyhole.

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Study on the Shift in the P-E Hysteresis Curve and the Fatigue Behavior of the PZT Capacitors Fabricated by Reactive Sputtering (반응성 스퍼터링법으로 형성시킨 PZT 커패시티의 P-E 이력곡선의 이동현상 및 피로 특성 연구)

  • Kim, Hyun-Ho;Lee, Won-Jong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.11
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    • pp.983-989
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    • 2005
  • [ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

Dielectric and Ferroelectric Properties of Nb Doped BNT-Based Relaxor Ferroelectrics

  • Maqbool, Adnan;Hussain, Ali;Malik, Rizwan Ahmed;Zaman, Arif;Song, Tae Kwon;Kim, Won-Jeong;Kim, Myong-Ho
    • Korean Journal of Materials Research
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    • v.25 no.7
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    • pp.317-321
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    • 2015
  • The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}Ti_{(1-x)}Nb_xO_3-0.01SrZrO_3$ (BNBTNb-SZ, with ${\chi}=0$, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature ($T_m$) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature ($T_{F-R}$) and maximum dielectric constant (${\varepsilon}_m$) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.

A study on the characteristics of the PZT thin films prepared by Pulsed Laser Depositon (PLD에 의해 제초된 PZT 박막의 특성에 관한 연구)

  • 김민철;박용욱;백동수;신현용;윤석진;김현재;윤기현
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.885-888
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    • 2000
  • The effects of deposition temperature and post annealing process of ferroelectric PbZr$\sub$0.52/Ti$\sub$0.48/O$_3$(PZT) thin films by pulsed laser deposition (PLD) were investigated. The PZT thin films were deposited at 400, 450, 500, and 550$^{\circ}C$, with/without post annealing at 650$^{\circ}C$ for 30 min. The PZT thin films deposited above 500$^{\circ}C$ without post annealing were crystallized into peroveskite phase, but the PZT thin films deposited below 450$^{\circ}C$ had pyrochlore phase. The PZT thin films deposited below 450$^{\circ}C$ with post annealing also crystallized into pure perovskite. Compared to the PZT thin films which were deposited at 450$^{\circ}C$ and post annealed, the films deposited at 550$^{\circ}C$ have a columnar microstructure and high remnant polarization 28 (${\mu}$C/cm$^2$). With in-situ annealing at oxygen ambient, the PZT thin films reduced oxygen vacancies and increased retained polarization.

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