• Title/Summary/Keyword: Pulsed modulation

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Crack localization by laser-induced narrowband ultrasound and nonlinear ultrasonic modulation

  • Liu, Peipei;Jang, Jinho;Sohn, Hoon
    • Smart Structures and Systems
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    • v.25 no.3
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    • pp.301-310
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    • 2020
  • The laser ultrasonic technique is gaining popularity for nondestructive evaluation (NDE) applications because it is a noncontact and couplant-free method and can inspect a target from a remote distance. For the conventional laser ultrasonic techniques, a pulsed laser is often used to generate broadband ultrasonic waves in a target structure. However, for crack detection using nonlinear ultrasonic modulation, it is necessary to generate narrowband ultrasonic waves. In this study, a pulsed laser is shaped into dual-line arrays using a spatial mask and used to simultaneously excite narrowband ultrasonic waves in the target structure at two distinct frequencies. Nonlinear ultrasonic modulation will occur between the two input frequencies when they encounter a fatigue crack existing in the target structure. Then, a nonlinear damage index (DI) is defined as a function of the magnitude of the modulation components and computed over the target structure by taking advantage of laser scanning. Finally, the fatigue crack is detected and localized by visualizing the nonlinear DI over the target structure. Numerical simulations and experimental tests are performed to examine the possibility of generating narrowband ultrasonic waves using the spatial mask. The performance of the proposed fatigue crack localization technique is validated by conducting an experiment with aluminum plates containing real fatigue cracks.

Simulation of Manipulating Various Pulsed Laser Operations Through Tuning the Modulation Depth of a Saturable Absorber (포화 흡수체의 투과변조깊이 조절을 통한 다양한 펄스상태 조작 방법에 관한 전산 모사)

  • Gene, Jinhwa;Yeom, Dong-Il;Kim, Byoung Yoon
    • Korean Journal of Optics and Photonics
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    • v.28 no.6
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    • pp.351-355
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    • 2017
  • In this paper, we conduct a simulation of manipulating various pulsed laser operations through tuning the modulation depth of the saturable absorber in a laser cavity. The research, showing that various pulsed operations could be manipulated from Q-switching through Q-switched mode locking to mode locking by tuning the modulation depth of the saturable absorber in a cavity, has been studied by experimental means. We conduct a simulation with the Haus master equation to verify that these experimental results are consistent with expectations from theory. The time dependence of the gain was considered to express Q-switching fluctuation through applying a rate equation with the Haus master equation. Laser operation was manipulated from mode locking through Q-switched mode locking to Q-switching as modulation depth was increased, and this result agreed well with the theoretical expectation.

Design and Fabrication of X-Band 50 W Pulsed SSPA Using Pulse Modulation and Power Supply Switching Method (펄스 변조 및 전원 스위칭 방법을 혼용한 X-대역 50 W Pulsed SSPA 설계 및 제작)

  • Kim, Hyo-Jong;Yoon, Myoung-Han;Chang, Pil-Sik;Kim, Wan-Sik;Lee, Jong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.4
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    • pp.440-446
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    • 2011
  • In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

A Discrete-Amplitude Pulse Width Modulation for a High-Efficiency Linear Power Amplifier

  • Jeon, Young-Sang;Nam, Sang-Wook
    • ETRI Journal
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    • v.33 no.5
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    • pp.679-688
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    • 2011
  • A new discrete-amplitude pulse width modulation (DAPWM) scheme for a high-efficiency linear power amplifier is proposed. A radio frequency (RF) input signal is divided into an envelope and a phase modulated carrier. The low-frequency envelope is modulated so that it can be represented by a pulse whose area is proportional to its amplitude. The modulated pulse has at least two different pulse amplitude levels in order that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing the modulated envelope with the phase modulated carrier. The RF pulse train is amplified by a switching-mode power amplifier, and the original RF input signal is restored by a band pass filter. Because duty ratios of the RF pulse train are kept large in spite of a small input envelope, the DAPWM technique can reduce loss from harmonic components. Furthermore, it reduces filtering efforts required to suppress harmonic components. Simulations show that the overall efficiency of the pulsed power amplifier with DAPWM is about 60.3% for a mobile WiMax signal. This is approximately a 73% increase compared to a pulsed power amplifier with PWM.

Photovoltaic System using the Stepdown Chopper and Current Source Inverter (강압쵸퍼와 전류형 인버터를 이용한 태양광발전 시스템)

  • 성낙규;이승환;김성남;이훈구;김용주;한경희
    • Proceedings of the KIPE Conference
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    • 1997.07a
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    • pp.370-373
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    • 1997
  • In this paper, we compose of the stepdown chopper and the current source inverter. Because dc side current of the current source inverter pulse with twice frequency of utility, we control that modulation factor of chopper is pulsed twice frequency. Therefore if voltage across the dc reactor equal to zero, it tis decreased. And we control modulation factor of the chopper to operate at maximum power point around of solar cell.

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60 MHz/2 MHz Dual-Frequency Capacitive Coupled Plasma에서 Pulse-Time Modulation을 이용한 $SiO_2$의 식각특성

  • Kim, Hoe-Jun;Jeon, Min-Hwan;Yang, Gyeong-Chae;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.307-307
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    • 2013
  • 초고집적 회로에 적용되는 반도체 소자의critical dimension (CD)이 수 nano 사이즈로 줄어들고 있기 때문에, 다양한 물질의 식각을 할 때, 건식식각의 중요성이 더 강조되고 있다. 특히 $SiO_2$와 같은 유전체 물질을 식각할 때, plasma process induced damages (P2IDs)가 관찰되어 왔고, 이러한 P2IDs를 줄이기 위해, pulsed-time modulation plasma가 광범위하게 연구되어 왔다. Pulsed plasma는 정기적으로 radio frequency (RF) power on과 off를 반복하여 rf power가 off된 동안, 평균전자 온도를 낮춤으로써, 웨이퍼로 입사되는 전하 축적을 효과적으로 줄일 수 있다. 또한 fluorocarbon plasmas를 사용하여 $SiO_2$를 식각하기 위해 Dual-Frequency Capacitive coupled plasma (DF-CCP)도 널리 연구되어 왔는데, 이것은 기존의 방법과는 다르게 plasma 밀도와 ion bombardment energy를 독립적으로 조절 가능하다는 장점이 있어서 미세 패턴을 식각할 때 효과적이다. 본 연구에서는 Source power에는 60 MHz pulsed radio frequency (RF)를, bias power에는 2 MHz continuous wave (CW) rf power가 사용된 system에서 Ar/$C_4$ F8/$O_2$ 가스 조합으로, amorphous carbon layer (ACL)가 hard mask로 사용된 $SiO_2$를 식각했다. 그리고 source pulse의 duty ratio와 pulse frequency의 효과에 따른 $SiO_2$의 식각특성을 연구하였다. 그 결과, duty ratio의 감소에 따라 $SiO_2$, ACL의 etch rate이 감소했지만, $SiO_2$/ACL의 etch selectivity는 증가하였다. 반면에 pulse frequency의 변화에 따른 두 물질의 etch selectivity는 크게 변화가 없었다. 그 이유는 pulse 조건인 duty ratio의 감소가 전자 온도 및 전자 에너지를 낮춰 $C_2F8$가스의 분해를 감소시켰으며, 이로 인해 식각된 $SiO_2$의 surface와 sidewall에 fluorocarbon polymer의 형성이 증가하였기 때문이다. 또한 duty ratio의 감소에 따라 etch selectivity뿐만 아니라 etch profile까지 향상되는 것을 확인할 수 있었다.

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Effects of Pulse Modulations on Particle Growth m Pulsed SiH4 Plasma Chemical Vapor Deposition Process (펄스 SiH4 플라즈마 화학기상증착 공정에서 입자 성장에 대한 펄스 변조의 영향)

  • Kim, Dong-Joo;Kim, Kyo-Seon
    • Journal of Industrial Technology
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    • v.26 no.B
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    • pp.173-181
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    • 2006
  • We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

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Configurtion of electron transfer cofactors in photosystem II studied by pulsed EPR

  • Asako Kawamori;NobuhiroKatsuta;Sachiko Arao;Hideyuki Hara;Hiroyuki Mino;Asako Ishii;Ono, Taka-aki;Jun Minagawa
    • Journal of Photoscience
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    • v.9 no.2
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    • pp.379-381
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    • 2002
  • The major electron transfer cofactors in photosystem II have been studied by pulsed EPR, pulsed electron electron double resonance (PELDOR) and laser excited spin polarized electron spin echo envelope modulation (ESEEM) methods, in non-oriented and oriented photosystem II membranes. Distances between radical pairs were determined trom the observed dipole interaction constants to be 27.3 A for P680-QA, 30 A, etc. with the error within 1 A. Angles between the distance vector and membrane normal was determined by orientation dependence of oriented membranes with the accuracy of 5˚ The results were compared with the recent structural data by X-ray analysis.

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