• Title/Summary/Keyword: Pulsed load

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AN EFFECT OF Nd : VAG LASER IRRADIATION ON THE MICROHARDNESS OF ROOT SURFACE (Nd : YAG layer 조사가 치근면의 미세경도에 미치는 영향)

  • Ahn, Jae-Hyeun;Kim, Byung-Ok;Han, Kyung-Yoon
    • Journal of Periodontal and Implant Science
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    • v.25 no.3
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    • pp.614-622
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    • 1995
  • Root caries is very frequently developed on exposed root surface after periodontal surgical treatment. In order to determine the anti-caries effect of Nd : YAG laser irradiation on periodontally exposed root surface, 40 mandibular molar teeth that had been extracted due to excessive periodontal destruction were used as the experimental teeth. All teeth were treated by the same procedure as conventional periodontal root treatment, ie thorough scaling, root planing and root conditioning with tetracycline HCl(100mg/ml, 5min.). Within middle one third of root, mesial half surface(20) or distal half surface(20) was randomly irradiated at various power of 1.0W, 2.0W, 3.0W and 4.0W for 60 seconds by non-contact(5mm) delivery of a pulsed Nd : YAG laser(EN.EL.EN060, Italy). The microhardness was measured by Vikers microhardness tester(Wilson, USA) at 2mm/second of jog speed under 100gm load. The difference of microhardness between irradiated side and non-irradiated side was statistically analyzed ANOVA and Duncan's method. Following results were obtained ; 1. The microhardness(Knoop hardness number) was significantly higher in laser irradiated surface than non-irradiated surface(p<0.05). 2. There was no significant difference in microhardness between experimental groups classified by different laser power(p>0.1). The results suggest that Nd : YAG laser irradiation on exposed root suface after periodontal therapy may inhibit the root caries development by enhancing surface microhardness.

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Hydraulic Behaviors of KSTAR PF Coils in Operation

  • Park, S.H.;Chu, Y.;Kim, Y.O.;Yonekawa, H.;Chang, Y.B.;Woo, I.S.;Lee, H.J.;Park, K.R.
    • Progress in Superconductivity and Cryogenics
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    • v.14 no.2
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    • pp.24-27
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    • 2012
  • The superconducting coil system is one of the most important components in Korea Superconducting Tokamak Advanced Research (KSTAR), which has been operated since 2008. $Nb_3Sn$ and NbTi superconductors are being used for cable-in-conduit conductors (CICCs) of the KSTAR toroidal field (TF) and poloidal field (PF) coils. The CICCs are cooled by forced-flow supercritical helium about 4.5 K. The temperature, pressure and mass flow rate of the supercritical helium in the CICCs are interacting with each other during the operation of the coils. The complicate behaviors of the supercritical helium have an effect on the operation and the efficiency of the helium refrigeration system (HRS) by means of, for instance, pressure drop. The hydraulic characteristics of the supercritical helium have been monitored while the TF coils have stably achieved the full current of 35 kA. In other hands, the PF coils have been operated with various pulsed or bipolar mode, so the drastic changes happen in view of hydraulics. The heat load including AC loss on the coils has been analyzed according to the measurement. These activities are important to estimate the temperature margin in various PF operation conditions. In this paper, the latest hydraulic behaviors of PF coils during KSTAR operation are presented.

S-Band 300-W GaN HEMT Harmonic-Tuned Internally-Matched Power Amplifier (S-대역 300 W급 GaN HEMT 고조파 튜닝 내부 정합 전력증폭기)

  • Kang, Hyun-Seok;Lee, Ik-Joon;Bae, Kyung-Tae;Kim, Seil;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.290-298
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    • 2018
  • Herein, an S-band internally-matched power amplifier that shows a power capability of 300 W in a Long Term Evolution(LTE) band 7 is designed and fabricated using a CGHV40320D GaN HEMT from Wolfspeed. Based on the nonlinear model, the optimum source and load impedance are extracted from the source-pull and load-pull simulations at the fundamental and harmonic frequencies, and the harmonic impedance tuning circuits are implemented inside a ceramic package. The internally matched power amplifier, which is fabricated using a thin-film substrate with a high relative permittivity of 40 and an RF35TC PCB substrate, is measured at the pulsed condition with a pulse period of 1 ms and a duty cycle of 10%. The measured results show a maximum output power of 257~323 W, a drain efficiency of 64~71%, and a power gain of 11.5~14.0 dB at 2.62~2.69 GHz. The LTE-based measurement shows a drain efficiency of 42~49% and an ACLR of less than -30 dBc(excluding 2.62 GHz) at an average power of 79 W.

X-Band 50 W Pulse-Mode GaN HEMT Internally Matched Power Amplifier (X-대역 50 W급 펄스 모드 GaN HEMT 내부 정합 전력 증폭기)

  • Kang, Hyun-Seok;Bae, Kyung-Tae;Lee, Ik-Joon;Cha, Hyen-Won;Min, Byoung-Gue;Kang, Dong-Min;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.10
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    • pp.892-899
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    • 2016
  • In this paper, an X-band 50 W internally matched power amplifier is designed and fabricated using an $80{\times}150{\mu}m$ GaN HEMT that is developed by the $0.25{\mu}m$ GaN HEMT process of ETRI. The optimum source and load impedances are experimentally extracted from the loadpull measurement using impedance-transform-prematching circuits, and the transistor performance is predicted. The power performance of the internally matched power amplifier, whose matching circuits are fabricated on a substrate with ${\varepsilon}_r$ of 10.2, is measured under the pulsed mode of $100{\mu}s$ pulse period and 10 % duty cycle, and the best output power of 47.46 dBm(55.5 W) and the power-added efficiency of 46.6 % are obtained at 9.2 GHz. The output power of 47~47.46 dBm(50~55.7 W) is measured in 9.0~9.5 GHz, and the power-added efficiency is measured to be greater than 43 % in 9.0~9.3 GHz and above 36 % in 9.4~9.5 GHz.