• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.214-218
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• 1994

$Y_{3}Fe_{5}O_{12}$ based garnet films(thin or thick) offer a great promise for the application of microwave communication components. We investigated the magnetic and crystallographic preperties of $Y_{3}Fe_{5}O_{12}$ thick films prepared by KrF eximer laser ablation of a stoichiometric garnet target. It was possible to obtain almost epitaxially oriented films on $Al_{2}O_{3}$(1102) plane. Although the crystalline quality depends on substrate temperature and $O_{2}$ partial pressure used($Po_{2}$), 4.1m thick films of $4{\pi}M_{s}=1300$ Gauss and $H_{c}=37.5$ Oe were obtained at the substrate temperature of $700^{\circ}C$ with the $Po_{2}$ of 100 mTorr after annealing the as-deposited films at $700^{\circ}C$ for 2 hours. These films are expected to be used for magnetostatic spin wave filters at narrow bandwidth frequency.

• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.4
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• pp.954-967
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• 1996

Laser application to modify healthy permanent dentin to improve microhardness and caries resistence has been previously reported but the physical modification and ablation thresholds of carious and sclerotic dentin has yet to be identified. This study determined the energy density required by modify (physical modification threshold, PMT) and remove (ablation threshold, AT) infected carious, affected and selerotic dentin compared to healthy permanent dentin. $1{\pm}0.25mm$ thick dentin sections(n=272) from extracted human teeth were used. Smear layer was removed 0.5M EDTA for 2 minutes. Utilizing three pulsed fiberopitc delivered contact lasers with different emission wavelengths($1.06{\mu}m$=Nd : YAG, $2.10{\mu}m$=Ho : YAG and $2.94{\mu}mEr$ : YAG). The energy density($J/cm^2$) was incrementally increased and the resulting tissue interaction classified on a scale from 0-6. A minimum of 5 repetitions/energy density were completed. Light microscopy(10-25X) was used to verify the physical modification(scale=3) and ablation thresholds(scale=4) of the various forms of dentin and the data were analyzed by logistic regression at the 95 % confidence interval. PMT and AT by the laser and the dentin types were: PMT and AT was lower in infected dentin than in sound dentin for all lasers. PMT and AT induced by Nd : YAG>Ho : YAG>Er : YAG for all forms of dentin. Microhardness was increased in sound dentin at PMT. Morphology of crater examined by light microscopy showed Nd : YAG was safe and effective for removing carious dentin and Er: YAG was effective for removing sound dentin. The PMT and AT for YAG lasers are different as a function of dentin type which may be utilized for selective modification and removal of dentin.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.1005-1011
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• 1991

Y-Ba-Cu-O thin films were in-situ fabricated on LaAlO3(100) substrates using the second harmonics of a pulsed Nd:YAG laser. Thin films were deposited under 200 (mtorr) of oxygen atmosphere, when the substrate temperature was changed between 67$0^{\circ}C$ and 82$0^{\circ}C$. After deposition, the films were in-situ annealed at 50$0^{\circ}C$ under 2/3 bar of oxygen pressure. We showed that the deposition temperature affects the formation of superconducting phase, the resistance, and the surface morphology. The Y-Ba-Cu-O thin films deposited at 76$0^{\circ}C$ show the zero resistance critical temperature of 85 K.

• Journal of Magnetics
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• v.1 no.1
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• pp.46-50
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• 1996

Highly oriented ${BaFe_{12}{O_{19}$ films were obtained by a KrF excimer laser ablation technique using (110)$(012){Al_2}{O_3}$(001)$(012){Al_2}{O_3}$ and $(012){Al_2}{O_3}$ substrates, respectively.The degree of alignment of more than 95% were achieved for (100) on (110)$(012){Al_2}{O_3}$ and (001)$(001){Al_2}{O_3}$ planes, and heteroepitaxial films of (114) on (012)$(012){Al_2}{O_3}$were possible to be grown with a lasing energy density of 6.67 J/$cm^2$ at an oxygen partial pressure ${PO_2}$ of 900 mTorr. The best magnetic properties were obtained from the as-deposited films at the substrate temperature of $700^{\circ}C$, and post annealing treatment was not needed to enhance the magnetic properties. Experimentally saturated magnetization ($4_pi M_S$) of 3600~3800 Gauss and coercivities $(H_c)$ of 3050~3080 Oe, which approach 85% of those of Ba-ferrite bulk composed of single domain particles, were obtained in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.112-117
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• 2004

$Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.3
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• pp.1-8
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• 2008

We present a model for simulating high energy laser heating of metal for ignition of energetic materials. The model considers effect of ablation of steel plate with long laser pulses and continuous lasers of several kilowatts and the thermal response of well-characterized high explosives for ignition. Since there is enough time for the thermal wave to propagate into the target and to create a region of hot spot in the high explosives, electron thermal diffusion of ultra-short (femto- and pico-second) lasing is ignored; instead, heat diffusion of absorbed laser energy in the solid target is modeled with thermal decomposition kinetic models of high explosives. Numerically simulated pulsed-laser heating of solid target and thermal explosion of RDX, TATB, and HMX are compared to experimental results. The experimental and numerical results are in good agreement.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.348-353
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• 2001

Experimental schemes that enable characterization of phase-change phenomena in the micro scale regime is essential for understanding the phase-change kinetics. Particularly, monitoring rapid vaporization on a submicron length scale is an important yet challenging task in a variety of laser-processing applications, including steam laser cleaning and liquid-assisted material ablation. This paper introduces a novel technique based on Michelson interferometry for probing the liquid-vaporization process on a solid surface heated by a KrF excimer laser pulse (${\lambda}=248nm,\;FWHM=24\;ns$) in water. The effective thickness of a microbubble layer has been measured with nanosecond time resolution. The maximum bubble size and growth rate are estimated to be of the order of $0.1{\mu}m\;and\;1\;m/s$, respectively. The results show that the acoustic enhancement in the laser induced vaporization process is caused by bubble expansion in the initial growth stage, not by bubble collapse. This work demonstrates that the interference method is effective for detecting bubble nucleation and microscale vaporization kinetics.