• Journal of the Korean Society of Radiology
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• v.2 no.1
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• pp.31-34
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• 2008

The neutron capture spectrum for the light nuclide was very useful to study the nuclear structure. In the present study, the capture gamma-ray from the 27-keV resonance of $^{19}F(n,g)^{20}F$ reaction were measured with an anti-Compton NaI(Tl) spectrometer and the 3-MV Pelletron accelerator of the Research Laboratory for Nuclear Reactors at the Tokyo institute of technology. A neutron Time-of-Flight method was adopted with a 1.5 ns pulsed neutron source by the $^7Li(p,n)^7Be$ reaction. In the present experiment, a Teflon(($CF_2$)n) sample was used The sample was disk with a diameter of 90mm. The thickness of sample was determined so that reasonable counting rates could be obtained and the correction was not so large for the self-shielding and multiple scattering of neutrons in the sample, and was 5mm. The primary gamma-ray transitions were compared with previous measurement of Kenny.

• Journal of Welding and Joining
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• v.25 no.5
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• pp.64-71
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• 2007

The aim of this paper is to investigate the effects of welding parameters on the weld shape in seal-welding of STS304L capsule for manufacturing a radioisotope source which is widely used in nondestructive testing of metal structures using gamma ray. Pulsed gas tungsten arc (Pulsed GTA) welding is performed for thin cross sectional area of the capsule. Seven welding parameters including current waveform parameters and arc length etc. are selected as main process parameters using design of experiment. The weld shape such as bead width, penetration depth, weld area, aspect ratio and area rate is investigated to assess the effects of welding parameters. As results, the combination of pulse duty/welding speed largely affects on bead width, penetration depth, area and aspect ratio. Finally, it is concluded that the key parameters are the combination of pulse duty/welding speed, base current and arc length, and their optimal conditions are 50%/1.77mm/s, 6.4A and 1 mm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.273-277
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• 2015

We investigated secondary electron emission characteristics of ZnO thin films prepared by pulsed laser deposition method with respect to the ambient oxygen pressure and the substrate temperature during the deposition. X-ray diffraction, UV-Vis spectrometry, atomic force microscopy, and ${\gamma}$-FIB were used to examine the structural, optical transmission, surface morphology, and secondary electron emission properties of the films, respectively. The secondary electron emission coefficient of the ZnO films increases as the O/Zn ratio of the films increases which was thought to result from either the ambient oxygen pressure increase or the substrate temperature decrease and as the grain size of the films decreases. It was confirmed that ZnO has better secondary electron emission characteristics than those of MgO, which is currently widely used as a material for PDP protecting layers.

• Korean Journal of Materials Research
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• v.11 no.12
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• pp.1063-1067
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• 2001

The effect of the pulse parameters(pulse ratio and frequency) on the characteristics of the nitrided layer in the pulsed plasma nitrified SCM435 Steels was investigated. Material properties of the nitrided layer were analysed by employing optical microscope, scanning electron microscope(SEM), X-ray diffractometer(XRD) and micro-Vickers hardness tester. It was found that both the compound layer thickness and the surface hardness decreased with decreasing of pulse ratios. At high pulse ratio, the compound layer thickness and the surface hardness were rapidly decreased with decreasing frequency compared to lower pulse ratios.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.10
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• pp.1448-1453
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• 2012

In this study, we carried out transient radiation test for identify failure situation by a transient radiation effect on operational amplifier devices. This experiments were carried out using a 60 MeV electron beam pulse of the LINAC(Linear Accelerator) facility in the Pohang Accelerator Laboratory. In this test, we has found that a serious failure as a burn-out effect due to overcurrent on the partial electronic devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1777-1783
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• 2014

In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.719-721
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• 2012

In this study, we carried out transient radiation experiments for identify failure situation by a transient radiation effect on DC/DC converter device due to high energy ionizing radiation pulse induced to electronic device. This experiments were carried out using a 60 MeV electron beam pulse of the LINAC(Linear Accelerator) facility in the Pohang Accelerator Laboratory. In this experiment, we has found that the latch-up phenomena could be checked in more than $1.0{\times}10^8$rad(si)/sec condition.