• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.62-62
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• 2018

Pt is still considered as one of the most active electrocatalysts for ORR in alkaline fuel cells. However, the high cost and scarcity of Pt hamper the widespread commercialization of fuel cells. As a strong candidate for the replacement of Pt catalyst, silver (Ag) has been extensively studied due to its high activity, abundance, and low cost. Ag is more stable than Pt in the pH range of 8~14 as the equilibrium potential of Ag/Ag+ being ${\approx}200mV$ higher than that of Pt/PtO. However, Ag is the overall catalytic activity of Ag for oxygen reduction reaction(ORR) is still not comparable to Pt catalyst since the surface Ag atoms are approximately 10 times less active than Pt atoms. Therefore, further enhancement in the ORR activity of Ag catalysts is necessary to be competitive with current cutting-edge Pt-based catalysts. We demonstrate the architectural design of Ag catalysts, synthesized using plasma discharge in liquid phase, for enhanced ORR kinetics in alkaline media. An attractive feature of this work is that the plasma status controlled via electric-field could form the Ag nanowires or dendrites without any chemical agents. The plasma reactor was made of a Teflon vessel with an inner diameter of 80 mm and a height of 80 mm, where a pair of tungsten(W) electrodes with a diameter of 2 mm was placed horizontally. The stock solutions were made by dissolving the 5-mM AgNO3 in DI water. For the synthesis of Agnanowires, the electricfield of 3.6kVcm-1 in a 200-ml AgNO3 aqueous solution was applied across the electrodes using a bipolar pulsed power supply(Kurita, Seisakusyo Co. Ltd). The repetition rate and pulse width were fixed at 30kHz and 2.0 us, respectively. The plasma discharge was carried out for a fixed reaction time of 60 min. In case of Ag nanodendrites, the electric field of 32kVcm-1 in a 200-ml AgNO3 aqueous solution was applied and other conditions were identical to the plasma discharge in water in terms of electrode configuration, repetition rate and discharge time. Using SEM and STEM, morphology of Ag nanowires and dendrites were investigated. With 3.6 kV/cm, Ag nanowire was obtained, while Ag dendrite was constructed with 32 kV/cm. The average diameter and legth of Ag nanowireses were 50 nm and 3.5 um, and thoes values of Ag dendrites were 40 nm and 3.0 um. As a results of XPS analysis, the surface defects in the Ag nanowires facilitated O2 incorporation into the surface region via the interaction between the oxygen and the electron cloud of the adjacent Ag atoms. The catalytic activity of Ag for oxygen reduction reaction(ORR) showed that the catalytic ORR activity of Ag nanowires are much better than Ag nanodendrites, and electron transfer number of Ag nanowires is similar to that of Pt (${\approx}4$).

• 한국진공학회지
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• 제19권1호
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• pp.45-51
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• 2010

마그네트론 타겟에서 일어나는 다양한 물리적 현상에 의한 결과로 인해 발생하는 타겟 표면의 온도를 측정함으로써 그 분포가 플라즈마, 혹은 증착되는 박막에 영향을 줄 수 있는 가능성을 분석하였다. 마그네트론 스퍼터링의 타겟은 크게 원형 타겟과 사각 타겟으로 구분되는데, 사각 타겟에서는 자기장에 의한 corner effect 등에 의해 전자 집중 방전 영역이 발생하고 그것에 의해 타겟 표면에서 불균일한 온도분포가 생성됨을 확인했다. 국부적으로 온도가 높게 올라가는 지역은 비스퍼터링 지역에 비해 $10{\sim}20^{\circ}C$ 정도 높았으며, 스퍼터링 공정 시 문제점 중에 하나인 particle이 발생하면 그 부분에서 온도가 $20^{\circ}C$ 정도 더 상승함을 알 수 있었다. 이런 영향은 증착되는 박막의 균일도에도 적지 않은 영향을 주었으며 세라믹 타겟의 경우, 균열의 원인이 될 수 있고, 불균일한 타겟 침식으로 타겟의 수명을 단축시키는 문제를 유발하기도 한다.

• 전기학회논문지
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• 제57권9호
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• pp.1599-1605
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• 2008

The research was conducted in order to improve the hydrogen generation efficiency of the electrical plasma technology from tap water by using $TiO_2$ photocatalyst, mixed Cu - $TiO_2$ powder, and mixed Ni - $TiO_2$ powder as the catalysts. Experiments were performed with the pulsed power and nitrogen carrier gas. The result has shown that the hydrogen concentration with the presence of $TiO_2$ powder was created higher than that of without using photocatalyst. The hydrogen concentration with using $TiO_2$ was 3012ppm corresponding to the applied voltage of 16kV, while it without using the $TiO_2$ was 1464ppm at the same condition . The effect of $TiO_2$ powder was strongly detected at the applied voltages of 15kV and 16kV. This phenomena might be resulted from the co-effect of the pulsed power discharge and the activated state of $TiO_2$ photocatalyst. The co-effect of the mixed catalysts such as Cu-$TiO_2$ and Ni-$TiO_2$ (the mixed photocatalyst $TiO_2$ and transition metals) were also investigated. The experimental results showed that, Cu and Ni powder dopants were greatly enhancing the activity of the $TiO_2$ photocatalyst. Under these experimental conditions the extremely high hydrogen concentrations at the optimal point were produced as 4089ppm and 6630ppm, respectively.

• 한국재료학회지
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• 제23권12호
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• pp.680-686
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• 2013

Tungsten oxide films were prepared by an electrochemical deposition method for use as the anode in rechargeable lithium batteries. Continuous potentiostatic deposition of the film led to numerous cracks of the deposits while pulsed deposition significantly suppressed crack generation and film delamination. In particular, a crack-free dense tungsten oxide film with a thickness of ca. 210 nm was successfully created by pulsed deposition. The thickness of tungsten oxide was linearly proportional to deposition time. Compositional and structural analyses revealed that the as-prepared deposit was amorphous tungsten oxide and the heat treatment transformed it into crystalline triclinic tungsten oxide. Both the as-prepared and heat-treated samples reacted reversibly with lithium as the anode for rechargeable lithium batteries. Typical peaks for the conversion processes of tungsten oxides were observed in cyclic voltammograms, and the reversibility of the heat-treated sample exceeded that of the as-prepared one. Consistently, the cycling stability of the heat-treated sample proved to be much better than that of the as-prepared one in a galvanostatic charge/discharge experiment. These results demonstrate the feasibility of using electrolytic tungsten oxide films as the anode in rechargeable lithium batteries. However, further works are still needed to make a dense film with higher thickness and improved cycling stability for its practical use.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2098-2100
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• 2000

We propose pulsed $CO_2$ laser below 30W by the AC(60Hz) switching control of leakage transformer primary which has some advantage of cost and size compared to a typical pulsed power supply. Pulse repetition rate is adjusted from 5Hz to 60Hz to control laser output. In this laser, a low voltage open loop control for high voltage discharge circuit is employed to avoid the HV sampling or switching and high voltage leakage transformer is used to convert rectified low voltage pulse to high voltage one. A ZCS(Zero Cross Switch) circuit and a PIC one-chip microprocessor are used to control gate signal of SCR precisely. The pulse repetition rate is limited by 60Hz due to the frequency of AC line and a high leakage inductance. The maximum laser output was obtained about 23W at pulse repetition rate of 60Hz, total gas mixture of $CO_{2}/N_{2}$/He = 1/9/15, SCR gate trigger angle 90$^{\circ}$, and total pressure of 18Torr.

• 한국식품과학회지
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• 제48권5호
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• pp.525-529
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• 2016

시중에서 판매되고 있는 후추 29종을 수거하여 오염도를 조사한 결과, 전통시장에서 구입한 후추는 일반세균 $10^6-10^7$, Bacillus $10^4-10^5$, 효모와 곰팡이 $10^2$ 이하의 오염도를 보였고, 유기농 제품으로 판매되는 후추의 경우에는 일반세균 $10^4$, Bacillus $10^2-10^3$, 효모는 $10^1$ 이하의 오염도를 나타내었다. 대형마트에서 판매되고 있는 후추는 낮은 오염도를 나타내었으나 일부에서는 일반세균이 $10^3$ 정도의 오염도를 보였다. 전압 1,000 V, 펄스수 5 pps, 시료와 램프사이의 거리 4 cm의 조건에서 10분간 광펄스 처리하였을 경우 통후추는 1.45-1.55 log, 흑후추분말과 백후추분말은 0.8-0.85 log의 사멸율을 나타내었다. 살균 용기의 차이에 따른 살균율에는 유의적인 차이를 나타내지 않았다. 광펄스에 의한 후추의 살균율은 오존처리나 감압방전프라즈마 살균 등 다른 비가열 살균방법에 비해서는 높은 사멸율을 보여 산업적 적용 가능성을 보였으나, 추가적인 연구를 통해 살균 효과를 높일 수 있는 방법이 제시되어야 할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• 항공우주기술
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• 제6권1호
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• pp.83-91
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• 2007

위성용 RF 수동 소자에 대한 MP(multipactor) 현상과 그 검출 방법에 대한 연구를 수행하였으며, 본 연구에 사용된 RF 수동 소자는 S 대역 diplexer로, 이는 인터디지털 타입의 5단 chebyshev 응답특성을 갖는 두개의 대역통과필터로 구성되며 2.232 및 2.055 GHz 대역에서 2.7 %의 대역폭을 갖는 구조로 각각 설계되었다. MP 민감도 해석을 위해 diplexer에 대하여 3D 전자기 모델링을 수행하였으며, 이를 통하여 diplexer 구조적으로 multipactor에 대하여 가장 민감한 부분을 정의 하였고 이때의 MP 방전 현상이 나타나지 않는 최대 RF 입력전력을 규명하였다. 또한 KARI 자체 개발한 MP 민감도 시험 시설을 이용하여 QM용 diplexer에 대한 시험을 수행하였으며, 그 결과 CW 모드에서 43 dBm, 펄스 모드 시험에서 44 dBm의 RF 입력 전력에서 MP가 발생됨을 확인 하였다.

• 조명전기설비학회논문지
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• 제13권3호
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• pp.40-47
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• 1999

본 연구에서는 개발하고자 하는 저에너지 대면적 전자빔 발생장치는 원리로서 발생원인 글로우 발전에 의한 플라즈마로부터 이온을 음극으로 가속, 충돌하게 하여 그때 발생하는 2차전자를 전자빔원으로 하여 전자를 가속·제어하는데 바탕을 두고 있으며, 본 연구에서는 이러한 원리를 기본으로 이론적 해석을 통한 고효율의 저에너지 대면적 전자빔 발생장치개발의 설계 및 제작에 대해서 연구하였으며, 또한 빔 에너지의 안전성과 방전조건을 고려한 최적의 방전 파라메타를 설정하여 대면적의 균일한 빔 인출을 가능케 하였다.