• 상하수도학회지
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• 제26권5호
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• pp.685-692
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• 2012

UV technology is widely used in water and wastewater treatment. Many researches have been conducted on microbial disinfection and micro pollutant reduction with UV treatment. However, the study on NOM with UV has limited because low/medium pressure UV lamp is not sufficient to affect refractory organics such as NOM. Pulsed UV treatment using UV flash lamp can be operated in the pulsed mode with much greater peak intensity. The pulse duration is typically in microseconds, whereas the interval between pulses is in the order of milliseconds. The high intensity of pulsed UV would mineralize NOM itself as well as change the characteristics of NOM. Chlorine demand and DBPs formation is affected on the changed amounts and properties of NOM. The objective of this study is to investigate the effect on NOM, chlorine residual, and chlorinated DBPs formation with pulsed UV treatment.

• 상하수도학회지
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• 제28권1호
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• pp.61-72
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• 2014

Study on effluent organic matter (EfOM) characteristic and removal efficiency is required, because EfOM is important in regard to the stability of effluents reuse, quality issues of artificial recharge and water conservation of aqueous system. UV technology is widely used in wastewater treatment. Many reports have been conducted on microbial disinfection and micro pollutant reduction with UV treatment. However, the study on EfOM with UV has limited because low/medium pressure UV lamp is not sufficient to affect refractory organics. The high intensity of pulsed UV would mineralize EfOM itself as well as change the characteristics of EfOM. Chlorine demand and DBPs formation is affected on the changed amounts and properties of EfOM. The objective of this study is to investigate the effect on EfOM, chlorine residual, and chlorinated DBPs formation with low pressure and pulsed UV treatment. The removal of organic matter through low pressure UV treatment is insignificant effect. Pulsed UV treatment effectively removes/transforms EfOM. As a result, the chlorine consumption is changed and chlorine DBPs formation is decreased. However, excessive UV treatment caused problems of increasing chlorine consumption and generating unknown by-products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.185-187
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• 2004

The electron concentration of ZnO thin film fabricated by pulsed laser deposition was controlled by varying oxygen gas pressure. The electron concentration of ZnO was increased from $10^{17}\;to\;10^{19}/cm^3$ as oxygen gas pressure increased from 20 mTorr to 350 mTorr. Ultraviolet(UV) intensity of photoluminescence of ZnO was controlled, too. UV intensity of ZnO was increased as oxygen gas pressure increased from 20 mTorr to 350 mTorr. The relation between electron concentration and UV intensity was investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.355-357
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• 2001

ZnO thin films were deposited on (001) sapphire substrate at various ambient gas pressure by pulsed laser deposition(PLD). Oxygen was used as ambient gas, and oxygen gas pressure was varied from 1.0${\times}$10$\^$-6/ Torr to 500 mTorr during the film deposition. As oxygen gas pressure increase in the region below critical pressure photoluminescence(PL) intensity in UV and green region increase. As oxygen gas pressure increase in the region above critical pressure photoluminescence(PL) intensity in UV and green region decrease. Each of critical ambient gas Pressures was 350 mTorr for UV emission and 200 mTorr for green emission.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2003년도 춘계학술연구발표회
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• pp.6-6
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• 2003

Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.

• 상하수도학회지
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• 제26권2호
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• pp.313-319
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• 2012

This study investigated the relative degradation of commonly known endocrine-disrupting compounds such as bisphenol A (BPA) and 17${\beta}$-estradiol (E2) using ultrasound (US) and pulsed ultraviolet (PUV) in water. The removal efficiency of BPA and E2 was determined as a function of generating power and $H_{2}O_{2}$ production. The ultrasound and PUV irradiation of the aqueous solution was performed in 3 L and 90 L stainless reactor at a constant temperature of $20^{\circ}C$ with an applied power of 200 W and 2000 W, respectively. The removal of BPA and E2 by US and PUV varied with catalysts. The experiments were conducted under the following conditions: total operating time, 30 min; initial concentration, 1 uM. In the case of E2 (10 min), % removal was 92.5/95.8/87.6/82.4, while % removal of BPA (10 min) was 62.3/82.3/91.1/67.0/64.3 in various conditions (PUV, $PUV+H_2O_2$, PUV+wire mesh, $PUV+TiO_2$ coated wire mesh), respectively.

• 대한환경공학회지
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• 제39권10호
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• pp.575-580
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• 2017

전 세계적으로 지하수에서 TCE, PCE, BTEX, PAH, TPH, TNT, RDX, HMX가 지속적으로 검출되고 있다. 이러한 오염물질들은 기존의 물리화학적 방법으로 제거시에는 한계가 있으며, 신속한 정화를 요구하는 현장에 적용하기에는 많은 어려움이 있는 실정이다. 이에 본 연구에서는 난분해성 오염물질의 제거를 위해 PUV와 US를 연계하여 적용하고자 하였다. 각 공정은 고 에너지를 주입하는 PUV 공정과 라디칼 생산을 통해 오염물을 제거하는 US 공정의 특징을 이용하였으며, 제거율 향상을 위한 촉매주입도 함께 고려하였다. 연구 결과 PUV-US 하이브리드 시스템의 상승효과는 TCE, PCE, BTEX, TNT, RDX, HMX를 처리하는데는 90% 이상의 제거율을 나타내 적용 가능한, 효과적인 공정으로 판단되었으나 PAHs 제거를 위해서는 추가적인 공정 개선이 필요한 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• 한국지하수토양환경학회지:지하수토양환경
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• 제20권1호
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• pp.36-40
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• 2015

This study examined the disinfection in combined sewer overflows (CSOs) by pulsed ultraviolet (PUV). The reflectors (stainless steel. mirror, aluminium foil, aluminium (1050), aluminium (6061), aluminium (5052), and aluminium mirror) of PUV irradiation was performed in a 90 L stainless reactor at a constant temperature of $20^{\circ}C$ and an applied power of 4000 W. The reflection efficiency of reflectors were showed 1.00 (aluminium mirror) ~ 1.48 (aluminium foil) does. The case of a rough surface analysis using SEM showed high reflectance, was the case of a smooth surface and a low reflectivity. Pseudo first-order rate constant calculated results, has a higher reflectivity values were more than twice as high compared to the low reflectivity. Affected Total coliforms disinfection time, depending on the type of reflector is considered.