• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.12-15
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• 2004

There are two major approaches to obtain texture template for HTS coated conductor (CC) ---IBAD and RABiTS. CC's with IBAD template showed both longer and higher Ic results so far. IBAD for CC began with YSZ, the processing of which is very slow compared to other processings needed for the fabrication of CC. Because of this very slow processing speed, IBAD with other materials such as Gd$_2$Zr$_2$O$_{7}$(GZO) and MgO have been developed. The processings of IBAD-GZO and IBAD-MgO are known to be up to 3times and 100 times. respectively, as fast as the processing of IBAD-YSZ. IBAD-MgO is very attractive in that the processing is very fast. IBAD-MgO also needs additional buffer layer(s). Many materials are being investigated to be used as a buffer layer on top of the MgO. BaZrO$_3$ (BZO) is a good candidate as the buffer layer on top of the IBAD-MgO because it is chemically stable and does not react with YBCO at high temperatures. It also has good lattice match with MgO. The BZO film has been deposited on single crystal MgO, and YBCO film was deposited on BZO/MgO to investigate the possibility of using BZO as both the buffer and capping layer of the CC.C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.

• Progress in Superconductivity and Cryogenics
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• v.16 no.2
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• pp.1-6
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• 2014

The five-year national project in Japan for R&D of coated conductors and applications, named as the Materials and Power Applications of Coated Conductors (M-PACC) project, was finished at the end of FY2013. The project consists of four sub-themes as cable, transformer, SMES and coated conductors. In the theme of coated conductors, the fabrication process had been developed to satisfy the requirements from the applications such as in-field $I_c$ performance, low AC loss in the long tapes etc. Through the project, the remarkable progress was achieved as follows; a high in-field minimum $I_c$ value over 54A/cm-width under 3T at 77K was realized in a 200m long EuBCO tape with artificial pinning centers of $BaHfO_3$ by the pulsed laser deposition (PLD) technique on the IBAD template. On the other hand, the AC loss reduction was confirmed in the tapes fabricated by both PLD and the metal organic deposition (MOD) techniques by scribing 100m tapes into 10-filamments. Additionally, the mechanism of the delamination phenomenon was systematically investigated and the strength was improved by eliminating the origins of the weak points in the films. Through the development, all targeted goals were accomplished and the several results were appreciated as a world champion data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.151-151
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• 2007

최근에 에피 성장된 ZnO는 UV-LED, 화학적-바이오센서와 투명전도 전극에 많은 관심을 받고 있다. 고 품질의 ZnO는 Metal-organic chemical vapor deposition(MOCVD), Pulsed laser deposition(PLD), molecular beam epitaxy(MBE), 그리고 마그네트론 스퍼터링법에 의해 성장이 이루어지고 있다. 대부분의 ZnO는 사파이어, 싫리콘과 같은 이종 기판 위에 성장되고 있으며, Heteroepitaxy로 성장된 ZnO 박막은 기판과 박막사이의 격자상수, 열팽창계수 차이로 인해 높은 결함 밀도를 보이고 있다. 이러한 문제점은 광전자 소자 응용에 있어 여러 가지 문제점을 야기 시킨다. 이와 같은 문제점을 해결하기 위해 박막과 기판사이에 저온 버퍼층을 사용하거나 같은 물질의 버퍼층을 사용하여 결할 밀도를 감소시키고, 높은 결정성을 가진 ZnO 박막을 성장시킨 결과들이 많이 보고되어지고 있다. 본 연구에서는 마그네트론 스퍼터링 법으로 저온 버퍼층 성장 없이 성장온도 만을 달리 하여 고품질의 ZnO 박막을 성장시켰다. ZnO 박막은 c-sapphire 기판위에 ZnO(99.9999%)의 타겟을 사용하여 $600{\sim}800^{\circ}C$ 온도에서 성장시켰고, 스퍼터링 가스로는 아르곤과 산소를 2:1 비율로 혼합하여 15mtorr의 압력에서 성장하였다. 이렇게 성장시킨 ZnO 박막은 Transmission Electron Microscopy (TEM), High-Resolution X-ray Diffraction (HRXRD), Low-temperature PL, 그리고 Atomic Force Microscopy (AFM)로 특성을 분석 하였다. ZnO 박막은 HRXRD (002) 면의 $\omega$-rocking curve운석 결과, $0.083^{\circ}$의 작은 FEHM을 얻었고, (102) 면의 $\varphi$-sacn을 통해 온도가 증가함에 따라 향상된 6-fold을 확인함으로새 에피성장됨을 알 수 있었다. 또한 TEM분석을 통해 $800^{\circ}C$에서 성장된 박막은 $6.7{\times}10^9/cm^2$의 전위밀도를 얻을 수 있었다.

• Progress in Superconductivity
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• v.14 no.1
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

• Progress in Superconductivity and Cryogenics
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• v.10 no.2
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• pp.16-19
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• 2008

Angular dependence of critical current density of SmBCO coated conductor fabricated by co-evaporation method was investigated. For comparison, three samples were fabricated by a co-evaporation method and one sample was fabricated by a pulsed laser deposition process. The deposition system, named EDDC (Evaporation using Drum in Dual Chambers), is a batch type co-evaporation system, which is composed of reaction chamber and evaporation chamber. The normalized critical current density ratio ($I_c/I_c$(H//ab-plane)) of EDDC-SmBCO samples was found to be higher than that of PLD-YBCO sample in the whole range of angle. While the EDDC-SmBCO samples evidently had a peak at the angle of H//c-axis in the plot of the angular dependence of critical current, the normalized critical current of PLD-YBCO sample decreased monotonically without any peak as angle increased. The field dependence of critical current under the magnetic field parallel to the normal direction of those samples showed similar aspect in the range of $0\;G{\sim}5000\;G$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.369-369
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• 2016

A nanostructure composite is a highly suitable substance for photoacoustic ultrasound generation. This allows an input laser beam (typically, nanosecond pulse duration) to be efficiently converted to an ultrasonic output with tens-of-MHz frequency. This type of energy converter has been demonstrated by using a carbon nanotube (CNT)-polydimethylsiloxane (PDMS) composite film that exhibit high optical absorption, rapid heat transition, and mechanical durability, all of which are necessary properties for high-amplitude ultrasound generation. In order to develop the CNT-PDMS composite film, a high-temperature chemical vapor deposition (HTCVD) method has been commonly used so far to grow CNT and then produce a CNT-PDMS composite structure. Here, instead of the complex HTCVD, we use a mixed solution of hydrophobic multi-walled CNT and dimethylformamid (DMF) and fabricate a solution-processed CNT-PDMS composite film over a spherically concave substrate, i.e. a focal energy converter. As the solution process can be applied over a large area, we could easily fabricate the focal transmitter that focuses the photoacoustic output at the moment of generation from the CNT-PDMS composite layer. With this method, we developed photoacoustic energy converters with a large diameter (>25 mm) and a long focal length (several cm). The lens performance was characterized in terms of output pressure amplitude for an incident pulsed laser energy and focal spot dimension in both lateral and axial. Due to the long focal length, we expect that the new lens can be applied for long-range ultrasonic treatment, e.g. biomedical therapy.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.128-133
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• 1995

Yttrium Iron Garnet($Y_{3}Fe_{5)O_{12}$) films have been succsssfully grown on(111)GGG wafer by KrF excimer laser ablation of stoichiometric garnet target at the oxygen partial pressure, $P(O_{2}$, ranging 20 to 500 mTorr. During the deposition of the films the substrate temperature was maintained at $700^{\circ}C$ and the laser beam energy density at $7.75\;J/cm_{2}$. Microstructure, composition and magnetic properties of the films obtained were investigated as a function of oxygen pressure and thickness of the films. Epitaxial films with a dense and a smooth surface were reproducible at a low oxygen pressure. The films of $2.75\;{\mu}$ min thickness deposited at 20 mTorr of $P(O_{2})$ showed $4{\pi}M_{s}$ of 1500 Gauss and $H_{c}$ of 3 Oe after annealing at $800\;^{\circ}C$ for 20 minutes. As-deposited films of $0.8\;\mu\textrm{m}$ in thickness exhibited the $4{\pi}M_{s}$ of 1730 Gauss and $H_{c}$ of 7 Oe. The magnetic properties of the films obtained were almost identical to those of a single crystal YIG.