• Title/Summary/Keyword: Pulsed Current

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The analysis of the electron drift velocity of Xenon gas by Boltzmann-equation (볼츠만 방정식을 이용한 Xe 가스의 전자 이동속도 해석)

  • Song, Byoung-Doo;Ha, Sung-Chul;Jeon, Byoung-Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05c
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    • pp.201-203
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    • 2001
  • This paper describes the information for quantitative simulation of weakly ionized plasma. We must grasp the meaning of the plasma state condition to utilize engineering application and to understand materials of plasma state. In this paper, the drift velocity of electron in Xenon gas calculated for range of E/N values from 0.01~500[Td] at the temperature is $300[^{\circ}K]$ and pressure is 1[Torr], using a set of electron collision cross sections determined by the authors and the values of drift velocity of electrons are obtained for TOF, PT, SST sampling method of Backward Prolongation by two term approximation Boltzmann equation method. it has also been used to predict swarm parameter using the values of cross section as input. The result of Boltzmann equation, the drift velocity of electrons, has been compared with experimental data by L. S. Frost and A. V. Phelps for a range of E/N. The swarm parameter from the study are expected to server as a critical test of current theories of low energy scattering by atoms and molecules.

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Influence of Pulsed Current and Plating Thickness on Formation of Micro-cracks in Hard Chromium Plating. (펄스 전원 및 도금 두께가 경질 크롬 도금의 마이크로 크랙 발생에 미치는 영향)

  • Jeong, Eun-Cheol;Son, Gyeong-Sik;Kim, Yong-Hwan;Jeong, Won-Seop
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.169-169
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    • 2016
  • 크롬산 용액에 황산을 촉매로 하여 Sargent에 의해 개발된 크롬도금은 경도, 내식성, 내마모성 등의 특성이 우수하다. 이로 인해 장식용 박막 도금뿐만 아니라 경질의 후막 도금층을 형성이 가능함으로써 기계 부품류를 비롯한 산업 전반에 걸쳐 폭넓게 적용되고 있다. 이러한 크롬도금이 적용된 소재부품에 대해 장수명화와 더불어 가혹한 환경에서의 사용요구가 점차 증가하고 있으며, 이를 위해서는 보다 더 우수한 내식성과 기계적 물성을 확보해야할 필요성이 높다. 한편 경질 크롬 도금의 내식성과 관련해 도금 과정에서 발생하는 마이크로 크랙에 의해 제품의 내식성의 한계를 나타내게 된다. 본 연구에서는 내식성이 우수할 뿐만 아니라 표면 경도가 우수한 도금층을 얻기 위해 도금 전류 조건으로 펄스 전류를 적용하는 방안을 시도한 것으로 펄스전류를 적용하여 경질크롬도금 시 크랙 발생에 미치는 영향을 조사하였다. 도금욕은 일반적인 경질크롬도금에 사용되는 Sargent 욕을 이용하였고, duty ratio를 조절하여 전류 조건 변화에 따른 단면 내 크랙의 수 변화를 관찰하여 최적의 전류 조건을 도출하였다. 그리고 도출된 전류 조건을 이용해 도금 두께에 따른 크랙 수 변화를 관찰하였고, 이때의 경도를 측정하였다. 또한 XRD 분석을 통해 도금 전류 조건 및 시간 변화에 따른 결정구조 변화를 확인하였다. 실험결과 펄스 전류를 적용하는 경우, 기존 직류 적용 시에 비해 크랙 발생을 현저하게 감소시킬 수 있었으며, 사실상 크랙프리(Crack free) 도금이 가능하였다. 또한 크랙의 감소와 함께 경도 저하가 나타나게 되나 펄스 전류 인자의 최적화에 따라 이러한 경도 저하 현상의 최소화가 가능하였다.

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Changes of Maximal Isometric Contraction and Fatigue of Quadriceps Femoris Muscle by NMES (신경근전기자극에 의한 대퇴사두근의 최대 등척성 수축력 및 피로도 변화)

  • Jeong, Seong-Gwan;Lee, Jung-Woo
    • Journal of the Korean Academy of Clinical Electrophysiology
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    • v.2 no.1
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    • pp.49-57
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    • 2004
  • The purpose of this study was to determine the effect of muscle contraction torque and muscle fatigue by low-frequency PC. In this article, We would like to experiment on electrical stimulation, determine optimal forms of stimulation setting. We used normal fourteen subjects(seven women, seven men) without neuromuscular disease and all subjects participated in the 3 session. Torque was measured using a computerized Kin-Com dynamometer for MVIC, MIC, Fatigue tests. The following results were obtained; 1. Torque of man were significantly higher than women in the MIC test(p<.05). 2. Torque of women, man were significantly decreased in the Fatigue test(p<.001). Between woman and man groups were significant difference(p<.05). These results lead us to the conclusion that muscle fatigue was influenced by PC, fatigue of women was higher than man. Therefore, A further studies concerning the electrical stimulation should consider differences between sexes in response to treatment and could enhance the development of the most effective treatment regimens.

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Discharge characteristics of Flat Fluorescent Lamp (FFL(Flat Fluorescent Lamp)의 방전 특정)

  • Kwon, Soon-Seok;Ryu, Jang-Ryeol
    • 전자공학회논문지 IE
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    • v.44 no.1
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    • pp.1-5
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    • 2007
  • This experiment was analysed the discharge characteristics of FFL(flat fluorescent lamp). FFL is operated by sine and pulse wave source. We use FFL which has the electrodes covered with dielectric, observed the discharge characteristics of FFL by V-Q Lissajous' figure. When FFL is operated with pulsed, the discharge current flows after the applied voltage is risen. When the duty ratio increases, the number of metastable xenon atoms seem to increase. Consequently, the 172nm radiation becomes strong as the duty ratio increases.

A Study on Improvement of the Performance of Pulsed AC Ion Bar (1) (바 형태 정전기제거장치의 정전기제거성능 향상을 위한 연구 (1))

  • Lee, Dong Hoon;Choi, Dong Soo;Jung, Yong Chul;Kim, Sang Min
    • Journal of the Korean Society of Safety
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    • v.29 no.3
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    • pp.34-38
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    • 2014
  • In Display such as LCD, LED, and AMOLED or semiconductor related industries are required to have static ionizer in order to produce reliable goods since the ionizer can create balanced ion that is delivered to producing goods to minimize electrical damages when manufacturing. However, the most general type of ionization is called, "Corona Discharge" that has a slight chances to generate unequal and unstable amount of each +/- ion to the target object. Then, the ionization performance will drastically decrease and end up with quality deterioration problem. In this research, our objective to resolve the current issue via applying "Coupling Condenser" on each counter electrodes of Corona discharging type ionizer. The result is that the ion balance was maintained the satisfied range that is within +/-100V when we changed the duty ratio of the High Voltage of Pulse AC about 40 ~ 70%. In addition, when levelling the High Voltage of Pulse AC, the ion balance holds the range within +20 ~ 0V. Even though we have tested the same experiment for a year, we have seen the range changes roughly ${\pm}50V$.

Effect of the 100Hz PWM Low Power Light Irradiation in Proliferation of NTacSam:SD Bone-marrow Cell (NTacSam:SD 골수 세포의 증식에 100Hz PWM 저출력 광 조사가 미치는 효과)

  • Cheon, Min-Woo;Kim, Seong-Hwan;Lee, Ho-Sic;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04b
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    • pp.10-11
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    • 2008
  • We developed the equipment palpating cell proliferation using a high brightness LED. This equipment was fabricated using a micro-controller and a high brightness LED, and designed to enable us to control light irradiation time, intensity, frequency and so on. Especially, to control the light irradiation frequency, FPGA was used, and to control the change of output value, TLC5941 was used. Control stage is divided into 30 levels by program. Consequently, the current value could be controlled by the change of level in Continue Wave(CW) and Pulse Width Modulation(PWM), and the output of a high brightness LED could be controlled stage by stage. And then, each experiment was performed to irradiation group and non-irradiation group for bone marrow cells. MIT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of bone marrow cells was verified in irradiation group as compared to non-irradiation group.

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The study of diode characteristics on the doping concentration of ZnO films using the Si Substrate (Si 기판위에 형성된 ZnO 박막의 도핑 농도에 따른 다이오드 특성 연구)

  • Lee, J.H.;Jang, B.L.;Lee, J.H.;Kim, J.J.;Kim, H.S.;Jang, N.W.;Cho, H.K.;Kong, B.H.;Lee, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.216-217
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    • 2008
  • Zinc-oxide films were deposited by pulsed laser deposition (PLD) technique using doped ZnO target (mixed $In_2O_3$ 0.1, 0.3, 0.6 at. % - atomic percentage) on the p-type Si(111) substrate. A little Indium has added at the n-ZnO films for the electron concentration control and enhanced the electrical properties. Also, post thermal annealed ZnO films are shown an enhanced structural and controled electron concentration by the annealing condition for the hetero junction diode of a better emitting characteristics. The electrical and the diode characteristics of the ZnO films were investigated by using Hall effect measurement and current-voltage measurement.

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Transparent ZnO thin film transistor with long channel length of 1mm (1mm의 채널을 갖는 ZnO 투명 박막 트랜지스터)

  • Lee, Choong-Hee;Ahn, Byung-Du;Oh, Sang-Hoon;Kim, Gun-Hee;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.34-35
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    • 2006
  • Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

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Indium Tin Oxide Thin Films Grown on Polyethersulphone (PES) Substrates by Pulsed-Laser Deposition for Use in Organic Light-Emitting Diodes

  • Kim, Kyung-Hyun;Park, Nae-Man;Kim, Tae-Youb;Cho, Kwan-Sik;Sung, Gun-Yong;Lee, Jeong-Ik;Chu, Hye-Yong
    • ETRI Journal
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    • v.27 no.4
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    • pp.405-410
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    • 2005
  • High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

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Frequency Domain Analysis of Laser and Acoustic Pressure Parameters in Photoacoustic Wave Equation for Acoustic Pressure Sensor Designs

  • Tabaru, Timucin Emre;Hayber, Sekip Esat;Saracoglu, Omer Galip
    • Current Optics and Photonics
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    • v.2 no.3
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    • pp.250-260
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    • 2018
  • A pressure wave created by the photoacoustic effect is affected by the medium and by laser parameters. The effect of these parameters on the generated pressure wave can be seen by solving the photoacoustic wave equation. These solutions which are examined in the time domain and the frequency domain should be considered by researchers in acoustic sensor design. In particular, frequency domain analysis contains significant information for designing the sensor. The most important part of this information is the determination of the operating frequency of the sensor. In this work, the laser parameters to excite the medium, and the acoustic signal parameters created by the medium are analyzed. For the first time, we have obtained solutions for situations which have no frequency domain solutions in the literature. The main focal point in this work is that the frequency domain solutions of the acoustic wave equation are performed and the effects of the frequency analysis of the related parameters are shown comparatively from the viewpoint of using them in acoustic sensor designs.