• Progress in Superconductivity
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• v.11 no.1
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• pp.62-66
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• 2009

Introduction of proper impurity into $YBa_2Cu_3O_{7-x}$ (YBCO) thin films is an effective way to enhance its flux-pinning properties. We investigate effect of $Y_2O_3$ nanoparticles on the critical current density $J_c$ of the YBCO thin films. The $Y_2O_3$ nanoparticles were created perpendicular to the film surface (parallel with the c-axis) either between YBCO and substrate or on top of YBCO, YBCO/$Y_2O_3$/LAO or $Y_2O_3$/YBCO/STO, by pulsed laser deposition. The deposition temperature of the YBCO films were varied ($780^{\circ}C$ and $800^{\circ}C$) to modify surface morphology of the YBCO films. Surface morphology characterization revealed that the lower deposition temperature of $780^{\circ}C$ created nano-sized holes on the YBCO film surface which may behave as intrinsic pinning centers, while the higher deposition temperature produced much denser and smoother surface. $J_c$ values of the YBCO films with $Y_2O_3$ particles were either remained nearly the same or decreased for the samples in which YBCO is grown at $780^{\circ}C$. On the other hand, $J_c$ values were enhanced for the samples in which YBCO is grown at higher temperature of $800^{\circ}C$. The difference in the effect of $Y_2O_3$ can be explained by the fact that the higher deposition temperature of $800^{\circ}C$ reduces intrinsic pinning centers and $J_c$ is enhanced by introduction of artificial pinning centers in the form of $Y_2O_3$ nanoparticles.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.998-1003
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• 1998

$BaTiO_3$ thin film was electrochemically deposited on Ti electrode in a 0.4 M $Ba(OH)_2$ solution of $85^{\circ}C$ using a current pulse waveform. Both $BaTiO_3$ crystallinity and faradaic efficiency for the film formation were enhanced with the increase of cathodic current density and pulse time. Based on the surface analysis and electrochemical studies, it was suggested that, during cathodic pulsed, the surface pH increase due to the reduction of $H_2O$ accelerates the structural changes of Ti oxides which were formed during anodic cycle. Prior to experiments, Ti oxides were intentionally grown in 0.1 M $H_2SO_4$ solution and the effect of initial oxide film thickness on the $BaTiO_3$ film formation was investigated. The migration of $Ti^{+4}$ ions through the oxide film was retarded with the increase of film thickness and it was observed that the crystallization of $BaTiO_3$ was only limited to the defect area of surface oxides.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

• Progress in Superconductivity
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• v.14 no.1
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.121-128
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• 1985

The electrochemical reduction of uranyl ion in aqueous basic media has been examined by d. c. polarography, differential pulsed polarography and cyclic voltammetry. From voltammograms obtained in uranyl solutions containing 0.1M sodium bicarbonate, either with or without the same amounts of sodium tripolyphosphate it is concluded that the first wave corresponds to the reduction of $UO_2^{2+}$ to $UO_2^+$. It is assumed that the uranyl ion undergoes appreciable hydrolysis in these media. The hydrolysis product $UO_2OH^+$ from $UO_2^{2+}$ is not reduced at the first wave, but is reduced at the second wave together with $UO_2^+$. The diffusion current was found proportional to the uranyl concentration in a range between $7.5 {\times} 10^{-4}$ and $3.75 {\times}10^{-3}$M.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.169-169
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• 2012

The high-temperature superconductor YBa2Cu3O7-x (YBCO) have attached attentions because of a high superconducting transition temperature, low surface resistance, high superconducting critical current density (Jc), and superior superconducting capability under magnetic field. Moreover, the Jc of YBCO superconductors can be enhanced by adding impurities to the YBCO films for vortex-pinning. Understanding and controlling pinning centers are key factors to realize high Jc superconductors. We synthesized vertically-aligned ZnO nanorods on SrTiO3 (STO) substrates by catalyst-free metal-organic chemical vapor deposition (MOCVD), and subsequently, deposited YBCO films on the ZnO nanorods/STO templates using pulsed laser deposition (PLD). The various techniques were used to analyze the structural and interfacial properties of the YBCO/ZnO nanorods/STO hybrid structures. SEM, TEM, and XRD measurements demonstrated that YBCO films on ZnO nanorods/STO were well crystallized with the (001) orientation. EXAFS measurements from YBCO/ZnO nanorods/STO at Cu K edge demonstrated that the local structural properties around Cu atoms in YBCO were quite similar to those of YBCO/STO.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.77-81
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• 2017

Pulse electroplating of Ni-P alloy was studied to fulfill the material requirement to the advanced vertical probe tip in wafer probe card. The major concerns are for the electrical conductivity and yield strength. Plating parameters such as current density, duty cycle and solution components were examined to obtain the nanocrystal structure and proper percentage of phosphorus, leading to how to control the nanocrystal grain growth and precipitation of $Ni_3P$ after heat treatment. Among the parameters, the amount of phosphorus acid was the main factor affecting on the grain size and sheet resistance, and the amount of 0.1 gram was appropriate. Since hardness in Ni-P alloy is increased by as-plated nanocrystal structure plus precipitation of $Ni_3P$, the concentration of P less than 15 at% was better choice for the grain coarsening without minus in hardness value. The following heat treatment made grain growth and dispersion of precipitates adjustable to meet the target limit of resistance of $100m{\Omega}$ and hardness number of over 1000Hv. The Ni-P alloy will be a candidate for the substitute of the conventional probe tip material.

• Journal of Magnetics
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• v.21 no.3
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• pp.450-459
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• 2016

Experimental results and data of numerical simulations are presented, concerning generation of wideband radio frequency (RF) oscillations in a nonlinear transmission line (NLTL) which contains a pre-magnetized core of ferrite material. Emphasis is made on the means for extracting the RF signal from the line, in order to radiate it into free space. Antennas of two types that can be used for the purpose are considered, both featuring a coaxial design. This permits availing of the principal advantages of coaxial systems, such as operation in the mode of a traveling TEM wave; wide range of the transmitted frequencies, and a reasonably simple design. The antennas studied, specifically a disc-cone dipole (DCD) and an impulse reflector antenna ('Half-IRA', or HIRA type) differ significantly in effective width of the radiated spectrum and in spatial characteristics of the radiated field in far region.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1615-1617
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• 1997

절연재료로서 널리 쓰이는 XLPE(Crosslinked Polyethylene)의 경우, 내부에 발생하는 수트리에 의해 절연체로서의 성능 및 내구성이 많은 영향을 받게 된다. 이에 대한 연구가 진행되어 왔지만 수트리 발생과 진행에 관한 메커니즘은 아직까지 정확하게 알려지지 않은 상태이다. 이 논문에서는 몇 가지의 수트리 억제 컴파운드를 선정하여 시간과 온도에 따른 수트리 발생을 관찰하고, 컴파운드 내의 공간전하 및 전도전류가 수트리 억제에 미치는 영향을 조사하였다. 수트리가속을 위하여 주파수가속열화 방법을 사용하고 온도와 시간에 따른 발생 및 진전을 관찰하였다. 실험에서는 압축성형된 평판형 시편을 사용하였으며 상부전극으로는 $AgNO_3$ 수용액을, 하부전극으로는 금속전극을 사용하였다. 그리고 컴파운드 내부의 공간전하 분포 및 전도전류 측정을 하기위해 PEA(Pulsed Electro Acoustic) 방법을 이용하였다.

• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.750-759
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• 2011

This paper focuses on the control of bidirectional power flow in the electric shipboard power systems, especially in the Medium-Voltage Direct Current (MVDC) shipboard power system. Bidirectional power control between the main MVDC bus and the local zones can improve the energy efficiency and control flexibility of electric ship systems. However, since the MVDC system contains various nonlinear loads such as pulsed power load and radar in various subsystems, the voltage of the MVDC and the local zones varies significantly. This voltage variation affects the control performance of the bidirectional DC-DC converters as exogenous disturbances. To improve the control performance regardless of uncertainties and disturbances, this paper proposes a novel controller design method of the bidirectional DC-DC converters using $L_1$ control theory and intelligent optimization algorithm. The performance of the proposed method is verified via large-scale real-time digital simulation of a notional shipboard MVDC power system.