• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.96-100
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• 2004

The Nd： YAG laser is commonly used throughout many fields such as accurate material processing, IC marking, semiconductor annealing, medical operation devices, etc., due to the fact that it has good thermal and mechanical properties and is easy to maintain. In materials processing, it is essential to vary the laser power density for specific materials. The laser power density can be mainly controlled by the current pulse width and pulse repetition rate. It is important to control the laser energy in those fields using a pulsed laser. In this paper we propose the constant-frequency current resonant half-bridge converter and monitoring of capacitor charging voltage. This laser power supply is designed and fabricated to have less switching loss, compact size, isolation with primary and secondary transformers, and detection of capacitor charging voltage. Also, the output stabilization characteristics of this Nd： YAG laser system are investigated. The test results are described as a function of laser output energy and flashlamp arc discharging constant. At the energy storage capacitor charges constant voltage, the laser output power is 2.3％ error range in 600[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.180-183
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• 2002

The pulsed power system was widely making use good of many industrial and environments. The pulse generator generally required for short pulse duration and high peak value was forced to consider its volume and economy. In this paper, this system is designed and fabricated which has a compact size of pulse generator with switched MOSFET. We have studied the removal of rust material using Arc discharging. It have tested their characteristics by adjusting variable voltage charging and pulse repetition rate. As a result, We can eliminate rust materials with this device.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.290-297
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• 2009

In case of using Asymmetric Bipolar Pulsed DC (ABPD) power generator, thin film is efficiently deposited as ions are getting higher energy by suppressing target poisoning and electric arc. In this article, the mechanical properties of CNx thin films deposited on the STS 316L were compared with DC and ABPD power generators. The CNx thin films deposited with ABPD clearly improved wear resistance by higher ratio of sp3CN as compared with DC. Nb interlayer affected to increase the value of 10N of adhesion between CNx thin films and substrate. But, CNx thin films deposited with ABPD couldn't endure to wear load and decreased wear resistance as the films were too thinner than substrate. Nevertheless the higher substrate bias energy applied to perform the dense films, it wasn't shown benefits about the wear properties from DC sputtering. But, in case of using ABPD sputtering, the wear resistance was largely improved without changing morphology despite of thin films.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.250-254
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• 2006

Effect of hydrogen partial pressure ratio on the structural and electrical properties of highly c-axis oriented ZnO films deposited by oxygen ion-assisted pulsed filtered vacuum arc at a room temperature was investigated. The hydrogen partial pressure ratio were $1.4%\sim9.8%$ at 40% oxygen pressure ratio. The conductivity of ZnO:H films was increased from 1.4% up to 4.2% due to relatively high carrier mobility caused by improvement of crystallinity While the conductivity of ZnO:H films were decreased over than 4.2% and (0002) orientation was also deteriorated. The lowest resistivity of ZnO:H films was $2.5{\times}10^{-3}\;{\Omega}{\cdot}cm$ at 4.2% of hydrogen pressure ratio. Transmittance of ZnO:H films in visible range was 85% which is lower than that of undoped ZnO films because of declined preferred orientation.

• Computational Structural Engineering
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• v.9 no.2
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• pp.143-151
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• 1996

The optimal design for Electro-magnetic Launcher (EML : Rail Gun) considering structural and electrical constraints are presented. For the structure of EML under high pulsed currency, the cross section is minimized subject to maximum stress of each element(rail, side wall, ceramic, and steel) within allowable stress and preload limits. The electrical constraint is the effective ceramic thickness which prevents the eddy current effect reducing the performance of EML. The stress analysis and optimization procedure of 90mm EML is conducted with ANSYS Code. The optimal design under preload is reduced to 53% of area compared with optimal design without preload. In case of rail with arc angle .theta.=45.deg., the performance of EML is the best among the other rail arc angles. The optimal design for rail with arc angle .theta.=45.deg., results in the reduction of 9% of area and 10.4% of deformation compared with Fahrenthold's design. The optimal preload 59.8MPa is much lower than Fahrenthold's design(186MPa). The results show that the optimal design of EML meets the design requirements.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.351-359
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• 2020

Formation behavior and properties of PEO (Plasma Electrolytic Oxidation) film on AA2024 were investigated under application of pulsed current as a function of Na3PO4 concentration in 0.05 M Na2SiO3 solution by analyzing voltage-time behavior, in-situ observation of arc generation, observation of surface morphology and measurements of thickness and surface roughness. Arc generation voltage decreased with increasing Na3PO4 concentration. Color difference of PEO films between edge and inner part disappeared by addition of Na3PO4. It was also observed that size of nodules on PEO film decreased with increasing Na3PO4 concentration. Thickness of PEO films formed on AA2024 increased with increasing Na3PO4 concentration. Whereas, surface roughness of PEO films decreased with increasing Na3PO4 concentration up to 0.05 M of Na3PO4 which is attributed to the deceased size of nodules on the PEO films. However, the surface roughness increased with increasing Na3PO4 concentration more than 0.07 M of Na3PO4 which seems to be due to the formation of non-uniform PEO films with smooth surface and large size pores formed by orange-colored big arcs. The experimental results suggest that added sodium phosphate less than 0.2 M in an alkaline silicate solution can contribute to the formation of relatively thick and uniform thickness of PEO films under arc generation voltage lower than 300 V.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.43-46
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.363-365
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• 2007

Titanium and its alloys have excellent corrosion resistance, high strength to weight ratios and high temperature creep properties, which make them using many various fields of application. Responding to these needs, welding processes for titanium are also being used including TIG, MIG, resistance welding, plasma arc welding, diffusion welding, electron beam welding and laser welding. In this study, It is possible to get sound beads without humping bead and spatter with the decrease of peak power according to increase of pulse width and change of welding speed for heat input control at pulsed Nd:YAG laser welding of titanium plates for Lap welding.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2251-2252
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• 1999

In this paper, the effect of magnetic field was measured on NOx removal characteristics for wire-plate plasma reactor with magnetic field applied to electric field vertically. NOx from simulated diesel engine flue gas are decomposed by the corona discharge of DC, AC and Pulsed voltages in wire-plate reactor. Consumption power increased with increasing discharge voltage. When magnetic field was applied to electric field vertically, consumption power decreased. NOx removal rate and arc transition voltage of plasma reactor with magnetic field were higher than those of plasma reactor without magnetic field.