• Bulletin of the Korean Chemical Society
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• v.28 no.2
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• pp.181-182
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.685-686
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• 2011

• Bulletin of the Korean Chemical Society
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• v.22 no.8
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• pp.789-790
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• 2001

• The Korean Journal of Pain
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• v.24 no.4
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• pp.199-204
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• 2011

Background: Although many clinicians know about the reducing effects of the pulsed and low-dose modes for fluoroscopic radiation when performing interventional procedures, few studies have quantified the reduction of radiation-absorbed doses (RADs). The aim of this study is to compare how much the RADs from a fluoroscopy are reduced according to the C-arm fluoroscopic modes used. Methods: We measured the RADs in the C-arm fluoroscopic modes including 'conventional mode', 'pulsed mode', 'low-dose mode', and 'pulsed + low-dose mode'. Clinical imaging conditions were simulated using a lead apron instead of a patient. According to each mode, one experimenter radiographed the lead apron, which was on the table, consecutively 5 times on the AP views. We regarded this as one set and a total of 10 sets were done according to each mode. Cumulative exposure time, RADs, peak X-ray energy, and current, which were viewed on the monitor, were recorded. Results: Pulsed, low-dose, and pulsed + low-dose modes showed significantly decreased RADs by 32%, 57%, and 83% compared to the conventional mode. The mean cumulative exposure time was significantly lower in the pulsed and pulsed + low-dose modes than in the conventional mode. All modes had pretty much the same peak X-ray energy. The mean current was significantly lower in the low-dose and pulsed + low-dose modes than in the conventional mode. Conclusions: The use of the pulsed and low-dose modes together significantly reduced the RADs compared to the conventional mode. Therefore, the proper use of the fluoroscopy and its C-arm modes will reduce the radiation exposure of patients and clinicians.

• Journal of Korean Neurosurgical Society
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• v.51 no.5
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• pp.281-285
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• 2012

Objective : Occipital neuralgia is characterized by paroxysmal jabbing pain in the dermatomes of the greater or lesser occipital nerves caused by irritation of these nerves. Although several therapies have been reported, they have only temporary therapeutic effects. We report the results of pulsed radiofrequency treatment of the occipital nerve, which was used to treat occipital neuralgia. Methods : Patients were diagnosed with occipital neuralgia according to the International Classification of Headache Disorders classification criteria. We performed pulsed radiofrequency neuromodulation when patients presented with clinical findings suggestive occipital neuralgia with positive diagnostic block of the occipital nerves with local anesthetics. Patients were analyzed according to age, duration of symptoms, surgical results, complications and recurrence. Pain was measured every month after the procedure using the visual analog and total pain indexes. Results : From 2010, ten patients were included in the study. The mean age was 52 years (34-70 years). The mean follow-up period was 7.5 months (6-10 months). Mean Visual Analog Scale and mean total pain index scores declined by 6.1 units and 192.1 units, respectively, during the follow-up period. No complications were reported. Conclusion : Pulsed radiofrequency neuromodulation of the occipital nerve is an effective treatment for occipital neuralgia. Further controlled prospective studies are necessary to evaluate the exact effects and long-term outcomes of this treatment method.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.59.2-59.2
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• 2015

Modification of film structure and properties in inductively-coupled plasma (ICP) assisted dc and pulsed dc sputtering has been reported by Oya and Kusano [1] and by Sakamoto, Kusano, and Matsuda [2], showing drastic changes in films structure and properties by the ICP assistance in particular to the pulsed dc discharge. Although mechanisms involved in the modification has been reported to be the increase in energy transferred to the substrate, details of effects of low-energy ion bombardment on the modification and origin of an anomalous increase in the ion quantity by the ICP assistance to the pulsed dc discharge have not been discussed. In this presentation, mechanisms involved in film structure and property modification in ICP assisted dc and pulsed dc sputtering, in which a number of low-energy ions are formed, will be discussed based on ion energy distribution as well as effectiveness of energy transfer to the substrate by low energy particles [3]. The results discussed in this presentation will emphasize the fact that the energetic particles playing an important role in the film structure modification are those to be deposited, but not those of inert gas, when their energies range in less than 100 eV in the pressure range of magnetron sputtering.

• Journal of Oral Medicine and Pain
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• v.23 no.1
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• pp.1-9
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• 1998

The aim of the study was to evaluate the anesthetic Effecs of pulsed Nd:YAG laser irradiation to the oral mucosa and the teeth. Twenty subjects who didn't have a history of significant systemic or current oral disease were included in this study. All the subjects were divided randomly into the experimental group and the control group with 10 for each group. Pain thresholds were measured with Weighted Needle Pinprick Sensory Threshold Test for the mucosal surface of lower lip and with electric pulp test for the upper right central incisor respectively, before and immediately after pulsed Nd:YAG laser irradiation in the condition of 2 watt, 20pps for 2 minute at 10mm distance. The experiment was double-blinded clinical trial. The results were as follows : 1. The mean pain threshold of the mucosal surface of lower lip for Weighted Needle Pinprick Sensory Threshold Test was 2.94(1.00g for the contral group respectively, and there was no statistical difference between two groups. 2. The mean pain threshold of the mucosal surface of lower lip was significantly increased immediately after pulsed Nd:YAG laser irradiation. 3. The mean pain threshold of the upper right central incisor for eledtric pulp test was 34.50(4.97V in the experimental group and 34.00(13.08V in the control group respectively, and there was no statistical difference between two groups. 4. The mean pain threshold of the upper right central incisor was significantly increased immediately after pulsed Nd:YAG laser irradiation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.10
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• pp.1421-1424
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• 2013

The electronic equipment which is exposed to high level pulsed radiation is damaged by Upset, Latchup, and Burnout. Those damages come from the instantaneous photocurrent from electron-hole pairs generated in itself. Such damages appear as losses of a power in military weapon system or as a blackout in aerospace equipment and eventually caused in gross loss of national power. In this paper, we have implemented a RDC(Radiation detection and control module) as a part of the radiation protection technology of the electronic equipment or devices from the pulsed gamma radiation. The RDC, which is composed of pulsed gamma-ray detection sensor, signal processors, and pulse generator, is designed to protect the an important electronic circuits from the a pulse radiation. To verify the functionality of the RDC, LM118s, which had damaged by the pulse radiation, were tested. The test results showed that the test sample applied with the RDC was worked well in spite of the irradiation of a pulse radiation. Through the experiments we could confirm that the radiation protection technology implemented with the RDC had the functionality of radiation protection for the electronic devices.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.6
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• pp.593-600
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• 2013

The asymmetric pulsed DC reactive magnetron sputtering system is widely used for the high quality plasma sputtering process such as a thin film deposition. In asymmetric pulsed DC power supply a reverse voltage is applied to the target periodically to minimize arc discharging effect. When sputtering in the mid-frequency range (20-350 kHz), the periodic target voltage reversals suppress arc formation at the target and provide long-term process stability. Thus, high quality, defect-free coatings of these materials can now be deposited at competitive rates. In this paper, a new style asymmetric pulsed DC power supply including mid-transformer is presented. In the proposed, an energy recovery circuit is adopted to reduce the mutual inductance of the transformer. As a result, the system dynamics of the voltage control loop is increased highly and the non-linear voltage boosting effect of the conventional system is removed. This work was proved through simulation and laboratory based experimental study.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1157-1162
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• 2013

We proposed AlGaN/GaN high-electron-mobility transistors (HEMTs) using thermal oxidation for NiOx passivation. Auger electron spectroscopy, secondary ion mass spectroscopy, and pulsed I-V were used to study oxidation features. The oxidation process diffused Ni and O into the AlGaN barrier and formed NiOx on the surface. The breakdown voltage of the proposed device was 1520 V while that of the conventional device was 300 V. The gate leakage current of the proposed device was 3.5 ${\mu}A/mm$ and that of the conventional device was 1116.7 ${\mu}A/mm$. The conventional device exhibited similar current in the gate-and-drain-pulsed I-V and its drain-pulsed counterpart. The gate-and-drain-pulsed current of the proposed device was about 56 % of the drain-pulsed current. This indicated that the oxidation process may form deep states having a low emission current, which then suppresses the leakage current. Our results suggest that the proposed process is suitable for achieving high breakdown voltages in the GaN-based devices.