• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.125-136
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• 1991

a mathematical model is presented to describe the current distribution on a rotaing disk electrode under the galvanostatic pulse conlitions. A numerical technique by finite difference method to the transient convective diffusion equation, coordinate transformation and separation of variables to Laplace equation, and an iterative algorithm to solve the above equations simtltaneously with approximate boundary conditions were developed. An experimental investigated based on copper deposition in a copper sulfate-sulfuric acid system was performed and satisfactory agreement was obtained between expermental and theoretical current distribution. The current distribution of copper deposition is secondary current distribution within the experimental conditions. Dimensionless variables, N and J as well as Wagner number were used to determine the criteria for the uniformity of current distribution.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.99-104
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• 2015

The requirement for success of via filling is its ability to fill via holes completely without producing voids or seams. Defect free via filling was obtained by optimizing plating conditions such as current mode, current density and additives. However, byproducts stemming from the breakdown of these organic additives reduce the lifetime of the devices and plating solutions. In this study, the relationship between JGB and current density on the copper via filling was investigated without the addition of other additives to minimize the contamination of copper via. AR 4 with $15{\mu}m$ diameter via were used for this study. The pulse current was used for the electroplating of copper and the current densities were varied from 10 to $20mA/cm^2$ and the concentrations of JGB were varied from 0 to 25 ppm. The map for the JGB concentration and current density was developed. And the optimum conditions for the AR 4 via filling with $15{\mu}m$ diameter were obtained.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.79-84
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• 2010

Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.

• Journal of Energy Engineering
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• v.5 no.2
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• pp.108-114
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• 1996

It is one of the most important factors to enhance the efficiency of the solar collectors by in-creasing collecting efficiency and decreasing heat loss. The pulse electrodeposition method has been involved in this study to improve characteristics of the solar selective coating on 230cm${\times}$60cm substrates and electrical efficiency of the process. The composition of the electrolyte was 280 g/$\ell$ chromic acid, 15 g/$\ell$ propionic acid, and 10 g/$\ell$ appropriate additive. 230cm${\times}$60cm copper and aluminium sheets were utilized as the substrates. It has been observed that the black chrome coatings exhibited reasonable optical properties for commercialization when the plating parameters were properly controlled; the absorptance was 0.98 and 0.97 and omittance was 0.17 and 0.23 for copper and aluminium substrate, respectively. This study implies that the pulse current electrolysis method could be applied to the large scale substrates, and the various products can be avilable after the consideration of the thermal conductivity, heat transfer efficiency and cost problems of the substrates.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.73-79
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• 2003

With the variation of Ag concentration in bath, current density, duty cycle, additive and agitation for electroplating of Sn-Ag solder, the compositions and the morphologies of solder were studied. It was possible to controll Ag content in Sn-Ag solder by varying Ag concentration in bath and current density. The microstructure size of Sn-Ag solder decreased with increasing current density. Duty cycle of pulse electroplating and quantity of additive affected on Ag content of deposit and surface roughness. In this work eutectic Sn-Ag solder bumps with fine pitch of 30 $\mu\textrm{m}$ and height of 15 $\mu\textrm{m}$ was formed successfully. The Ag content of electrodeposited solder was confirmed by EDS and WDS analyses and the surface morphologies was analyzed by SEM and 3D surface analyzer.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.667-673
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• 2010

Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.

• Korean Journal of Metals and Materials
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• v.50 no.2
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• pp.152-158
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• 2012

The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.77-81
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• 2017

Pulse electroplating of Ni-P alloy was studied to fulfill the material requirement to the advanced vertical probe tip in wafer probe card. The major concerns are for the electrical conductivity and yield strength. Plating parameters such as current density, duty cycle and solution components were examined to obtain the nanocrystal structure and proper percentage of phosphorus, leading to how to control the nanocrystal grain growth and precipitation of $Ni_3P$ after heat treatment. Among the parameters, the amount of phosphorus acid was the main factor affecting on the grain size and sheet resistance, and the amount of 0.1 gram was appropriate. Since hardness in Ni-P alloy is increased by as-plated nanocrystal structure plus precipitation of $Ni_3P$, the concentration of P less than 15 at% was better choice for the grain coarsening without minus in hardness value. The following heat treatment made grain growth and dispersion of precipitates adjustable to meet the target limit of resistance of $100m{\Omega}$ and hardness number of over 1000Hv. The Ni-P alloy will be a candidate for the substitute of the conventional probe tip material.

• Plant Biotechnology Reports
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• v.2 no.3
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• pp.219-226
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• 2008

Transgenic plants with the herbicide-resistance gene (bar gene) were obtained via organogenesis from isolated mesophyll protoplasts of Nierembergia repens after applying electroporation. Transient ${\beta}-glucuronidase$ (GUS) activity of electroporated protoplasts assayed 2 days after applying an electric pulse showed that optimum condition (transient GUS activity 319 pmol 4 MU/mg per min and plating efficiency 2.43%) for electroporation was 0.5 kV/cm in field strength and $100{\mu}F$ in capacitance. The protoplasts electroporated with the bar gene at this condition initiated formation of microcolonies on medium after 2 weeks. After 4 weeks of culture, equal volume of fresh 1/2-strength Murashige and Skoog (MS) medium containing 0.2 mg/l bialaphos was added for selection of transformed colonies. After 6 weeks of culture, growing colonies were transferred onto regeneration medium containing 1.0 mg/l bialaphos, on which they formed adventitious shoots 1-2 months after electroporation. The adventitious shoots rooted easily after transfer onto MS medium with bialaphos lacking plant-growth regulators. Transformation of these regenerants with the bar gene was confirmed by Southern analysis. Some of the transformants showed strong resistance to the application of bialaphos solution at 10.0 mg/l.