• 조명전기설비학회논문지
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• 제26권4호
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• pp.35-40
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• 2012

In this study, the ultraviolet (UV) intensity of polymer insulator was measured using the Anti-Reflective (AR) coating lens on the occurrence of corona discharge. The UV intensity was compared before and after the AR coating. Under the 200-260[nm] of UV lens, the reflection rate before AR coating was 7.5~5.5[%] with 85-89[%] of transmission rate. After AR coating, however, the reflection rate decreased to 1.3~1.22[%] with improved transmission (97.4~97.6[%]). Then, the UV intensity by distance was measured in the polymer insulator. According to the measurement, the UV intensity increased 6.5 times at 37.5[%] of Vm/Vbd with 5[m] of distance. As distance increased, the growth rate declined. As high voltage increased, in addition, AR coating was less effective due to the count error caused by the UV sensor pulse signal overlap. Therefore, it appears that it would be more effective to detect corona discharge with 5[m] or less of distance at diagnosis of power facilities by AR coating and UV sensor sensitivity.

• Journal of Life Science
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• 제10권2호
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• pp.50-54
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• 2000

The RAD4 gene of Saccharomyces cerevisiae is essential for the incision step of UV-induced excision repair. A yeast RAD4 gene has been previously isolated by functional complementation. In order to identify the RAD4 homologous gene from fungus Coprinus cinereus, we have constructed cosmid libraries from electrophoretically separated chromosomes of the C. cinereus. The 13 C. cinereus chromosomes were resolved by pulse-field gel electrophoresis, hybridized with S. cerevisiae RAD4 DNA, and then isolated homologous C. cinereus chromosome. Here, we report the cloning and characterization of fungus C. cinereus homolog of yeast RAD4 gene. Southern blot analysis confirmed that C. cinereus contains the sequence homologous DNA to RAD4 gene and this gene exists as a single copy in C. cinereus genome. When total RNA isolated from C. cinereus cells was hybridized with the 3.4 kb BglII DNA fragment of the S. cerevisiae RAD4 gene, a 2.5 kb of transcript was detected. The isolated gene encodes a protein of 810 amino acids.

• 한국정밀공학회지
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• 제27권10호
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• pp.23-28
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• 2010

Resistance trimming and cutting processes of printed circuit board by making use of high power UV laser with nano-second pulse width have been proposed and investigated experimentally. Also laser-based application system with high flexibility and complex has been designed and adopted power controller, auto beam size control, auto-focusing and control program developed for ourselves. The function of each module shows that they can be reliable for industrial equipments. Resistance trimming method used a plunge and double cut process with $20{\mu}m$ spot size beam. Results show that double cut process is more effective to control resistance trimming in precision than plunge cut process.

• 한국정밀공학회지
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• 제27권2호
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• pp.20-24
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• 2010

High speed cutting processes of rigid flexible printed circuit board by making use of high power UV laser with nano-second pulse width have been proposed and investigated experimentally. Also robust laser cutting system has been designed and developed in order to obtain a good cutting quality of rigid and flexible PCB with multi-layers (2-6 layers). Power controller module developed for ourselves is adapted to control the laser output power in the range less than 1%. The systems show the good performance of cutting speed, cutting width and cutting accuracy, respectively. Especially we have confirmed that the short circuit problem due to the carbonized contamination occurred in cross section of multi-layers by thermal effect of high power laser has been improved largely by using multi-pass cutting process with low power and high speed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.419-420
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• 2008

In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.319-321
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• 2004

We report on progress in developing high-power excimer lasers as well as UV-optics for creating low-temperature poly silicon (LTPS). A new high-power excimer laser offers 315 Watts with high pulse to pulse energy stability. Larger substrates can now be processed in better quality with either the SLS process or the new optics for line beam excimer laser annealing.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.314-318
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• 2011

Recently, ultrasound, infrared detector, V-I characteristic, gas analysis, UV (ultra-violet rays) camera etc. is used as inspections and diagnoses of the safety of power equipment. Especially, UV camera have attracted a great deal of interest from the view point of easy judgement. UV camera is used corona discharge. One of the most important and difficult problems to be solved filer design, materials and corona discharge. This paper is studied on the temperature characteristics, UV generation and shape analysis and corona pulse count according to the electrode distance and applied voltage. Also, Corona discharge characteristics in air are analyzed using prototype UV camera of Korea. UV generation due to surface discharge of AC is higher than that of DC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.134-134
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• 2009

In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

• 한국멀티미디어학회논문지
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• 제7권9호
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• pp.1233-1239
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• 2004

유성음원과 무성음원을 사용하는 음성부호화 방식에 있어서, 같은 프레임 안에 모음과 무성자음이 있는 경우에 음질저하 현상이 나타난다. 본 논문에서는 음질을 개선하기 위해 V/S/TSIUVC 스위칭, 개별피치 펄스와 TSIUVC 근사합성 방법을 사용한 새로운 멀티펄스 음성부호화 방식을 제시한다. TSIUVC는 영교차율과 개별피치 펄스에 의하여 추출되며, TSIUVC의 추출율은 여자와 남자음성에서 각각 91%와 95.2%를 얻었다. 여기에서 중요한 사실은 양질의 TSIUVC 합성 파형을 얻기 위해서는 0.547kHz 이하와 2.813kHz 이상의 주파수 정보를 사용하여야 한다. V/UV를 이용한 MPC와 V/S/TSIUVC를 이용한 FBD-MPC의 비교평가를 하였다. 실험결과, FBD-MPC의 음질이 MPC의 음질에 비하여 상당히 개선되었음을 알 수 있었다.

• 인터넷정보학회논문지
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• 제19권6호
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• pp.1-7
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• 2018

본 논문에서는 합성 음성파형의 일그러짐을 제어하기 위하여 V/UV/S(Voiced / Unvoiced / Silence)의 스위칭을 사용하고, 피치구간마다 멀티펄스를 보정하며, 무성자음(Unvoiced)의 근사합성에 특정주파수를 이용하는 ACFBD-MPC(Amplitude Compensation Frequency Band Division - Multi Pulse Coding)와 LMS-MPC(Least Mean Square - Multi Pulse Coding)를 통합한 8kbps ACLMS-MPC(Amplitude Compensation and Least Mean Square - Multi Pulse Coding) 부호화 방식을 제안하고자 한다. 여러 방식을 통합하는데 있어서, 음성파형의 일그러짐을 줄이면서 유성음과 무성음의 비트율을 8kbps로 조정하는 것이 중요하다. 유성음과 무성음의 비트율을 8kbps로 조정함에 있어서, 개별피치를 이용하여 대표구간의 멀티펄스를 피치구간마다 복원함으로서 음성파형을 효율적으로 합성할 수 있다. 8kbps의 부호화 조건에서 ACLMS-MPC 방식을 구현하고 SNR를 평가한 결과, ACLMS-MPC의 SNR는 남자음성에서 15.0dB, 여자음성에서 14.3dB 임을 확인할 수 있었다. 따라서 ACLMS-MPC가 기존의 MPC, ACFBD-MPC, LMS-MPC에 비하여 남자음성에서 0.3dB~1.8dB, 여자음성에서 0.3dB~1.6dB 정도 개선된 것을 알 수 있었다. 이러한 방법들은 셀룰러폰이나 인터넷폰과 같이 낮은 비트율의 음원을 사용하여 음성신호를 부호화하는 방식에 활용할 수 있을 것으로 기대된다. 향후 멀티펄스 음원의 진폭과 위치를 동시에 보정하는 6.9kbps 음성부호화 방식의 음질평가를 수행하고자 한다.