• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.150-153
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• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si wafers deposited by r.f magnetron sputtering, were analyzed with annealing condition(100$0^{\circ}C$, 120 min) by four point probe, SEM and XRD. Until annealing temperature of 100$0^{\circ}C$, MgO had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. The thermal characteristics of Pt micro-heater were analyed with Pt-RTD integrated on the same substrate, In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of 25~40$0^{\circ}C$ temperature of Pt micro-heater had up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 센서학회지
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• 제6권2호
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• pp.81-86
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• 1997

DC 마그네트론 스퍼터링을 이용하여 측온저항체 온도센서용 백금박막을 $Al_{2}O_{3}$ 기판위에 증착시켰다. 열처리 온도, 시간이 증가할수록 박막의 비저항 및 면저항은 감소하였다. Lift-off 방법을 이용하여 $Al_{2}O_{3}$ 기판위에 백금 저항체를 만들었으며, 텅스텐 wire, 실버 에폭시 그리고 SOG를 이용하여 백금박막 측온저항체 온도센서를 제작하였다. $25{\sim}400^{\circ}C$의 온도범위에서 백금박막 측온저항체 온도센서의 저항온도계수와 저항 변화율을 조사한 결과, 열처리 온도, 시간 및 박막의 두께가 증가할수록 저항온도계수가 증가하였으며 측정 온도범위 내에서 저항값은 선형적인 변화를 보였다. 열처리 온도 $1000^{\circ}C$, 시간 240분 그리고 박막두께 $1{\mu}m$ 조건에서 백금의 벌크에 가까운 $3825ppm/^{\circ}C$의 저항온도계수값을 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.358-361
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• 1999

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.17-20
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.153-155
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• 1998

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.431-434
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• 1998

Platinum-Cobalt alloy thin films were deposited on Al$_2$O$_3$ substrate by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the Al$_2$O$_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : 4.4 W/$\textrm{cm}^2$, Co : 6.91 W/$\textrm{cm}^2$, working vacuum on and annealing conditions of 1000 $^{\circ}C$ and 60 min, the resistivity and the sheet resistive thin films were 15 ${\mu}$$\Omega$$.$cm and 0.5 $\Omega$/$\square$, respectively. The TCR value of Pt-Co a films was measured with various thickness of thin films and annealing temperature. T TCR value is gained under condition 3000${\AA}$ of thin films thickness and 1000$^{\circ}C$ of temperature. These results indicate that Pt-Co alloy thin films have potentiality for the wide temperature ranges.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3319-3321
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• 1999

Pt-RTD and Micro Heater was fabricated by using MgO as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures, In the analysis of properties of Pt-RTD, TCR value had 3927 $ppm/^{\circ}C$ and liner in the temperature range of $25-400^{\circ}C$. The temperature of Pt micro-heater had up to $400^{\circ}C$ with 1.5watts of the heating power. In investigating output characteristics of flow sensors output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000sccm, heating power of 1.2W.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.658-662
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• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 센서학회지
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• 제7권1호
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• pp.45-50
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• 1998

마그네트론 코스퍼터링법으로 측온저항체 온도센서용 Pt-Co 합금박막을 $Al_{2}O_{3}$ 기판위에 증착시켰다. Lift-off 방법을 이용하여 $Al_{2}O_{3}$ 기판위에 Pt-Co 합금박막 저항체를 만들었으며, 인가전력, 진공도, 열처리 온도 및 신간에 따른 합금박막의 물리적, 전기적 특성을 조사하였다. 열처리 온도, 시간이 증가할수록 박막의 비저항 및 면저항이 감소하였다. 인가전력 Pt : $4.4 W/cm^{2}$, Co : $6.91\;W/cm^{2}$, 진공도 10 mTorr, $800^{\circ}C$, 60분간 열처리를 행한 Pt-Co 합금박막의 비저항 및 면저항은 각각 $15{\mu}{\Omega}{\cdot}cm$, $0.5{\Omega}/{\square}$이었다. 그리고 $25{\sim}600^{\circ}C$의 온도범위에서 $3000{\AA}$ 두께를 가지는 Pt-Co 합금박막의 저항온도계수는 $3740ppm/^{\circ}C$로 측정되었다. 이러한 결과로 Pt-Co 합금 박막은 측온저항체 온도센서로서의 가능성을 확인하였다.