• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.371.2-371.2
• /
• 2014

가스 센서분야에서 특정 가스종에 대한 선택성과 감응도 향상을 위해 금속 촉매 등을 센서 물질 표면이나 내부 등에 형성시키는 방안이 많이 연구되고 있다. 1차원 구조 반도성 물질인 나노섬유 내에 금속 촉매를 형성시켜 특정 가스에 대한 선택성과 감응도를 향상시키는 연구가 보고된 바 있다. 선행연구에 의하면 Au와 Pt입자가 형성된 나노섬유의 경우, 각각 CO와 toluene가스에 대하여 선택적인 감응을 나타내는 것으로 확인되었다. 본 연구에서는 전기방사법과 광환원법을 동시에 이용하여 Au와 Pt 입자가 포함된 $SnO_2$ 나노섬유를 합성하고, 이들 나노섬유의 가스감응 특성을 연구하였다.

• Journal of Sensor Science and Technology
• /
• v.6 no.6
• /
• pp.445-450
• /
• 1997

An ammonia gas sensor with high sensitivity using thick-film technology were fabricated and examined. The material for sensing the ammonia gas was the mixture of oxide semiconductor, $FeO_{x}-WO_{3}-SnO_{2}$. The sensor exhibits resistance increase upon exposure to low concentration of ammonia gas. The resistance of the sensor is decreased, on the other hand, for exposure to reducing gases such as ethyl alcohol, methane, propane and carbon monoxide. A novel method for detecting ammonia gas quite selectively utilizing a sensor array consisting of an ammonia gas sensor and a compensation element were proposed and developed. The compensation element is a Pt-doped $WO_{3}-SnO_{2}$ gas sensor which shows opposite direction of resistance change in comparison with that of the ammonia gas sensor upon exposure to ammonia gas. Excellent selectivity has been achieved using the sensor array having two sensing elements.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.65-65
• /
• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• The Korean Journal of Ceramics
• /
• v.2 no.1
• /
• pp.1-10
• /
• 1996

Transparent conducting $SnO_2$-based thin films have been coated on float substrates such as fused quartz, and ceramic fiber cloths such as the Nexel and E-glass cloth from tin alkoxides by the sol-gel technique. Also, thin films of alternating layers of $SnO_2$ and $SiO_2$ have been fabricated by dip coating. The sheet resistance and average visible transmittance of the films were investigated in the aspect of the applications as transparent electrodes such as liquid crystal displays, photo-detectors and solar cells. The Nextel and E-glass cloths coated with antimony-doped tin oxide (ATO) had sheet resistance of as low as $20 \;ohm/{\Box}$ and $120ohm/\;{\Box}$, respectively. The promotion effects of additives as $La_2O_3$ and Pt on the ethanol gas sensing properties of the films were investigated in the aspects of the applications as an alcohol sensor and a breath alcohol checker. Possible evidence of quantum well effects in the oxide multilayers of $SnO_2$ and $SiO_2$ was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.571-574
• /
• 2000

In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.11
• /
• pp.1631-1636
• /
• 1989

A space charge model for semiconductor reduced gas sensors has been roposed and applied to gas sensing mechanism. SnO2-x and SnO2-x/Pt thin film were deposited by vacuum evaporating method. And Hall effect and gas sensitivity characteristics of these sensors were measured. From the space charge model and carrier concentration, the number of the adsorbed gas atom on the solid surface was calculated quantitatively. The gas sensing model was compared with CO gas sensitivities of the fabricated thin film gas sensors.

• Journal of Sensor Science and Technology
• /
• v.11 no.6
• /
• pp.350-357
• /
• 2002

Micro gas sensor with single electrode was proposed for improving stability and sensitivity. Generally, metal oxide gas sensors have two electrodes for heating and sensing. This fabricated new type sensor have only a single electrode by forming a sensing material onto heating electrode. Pt as a heating and sensing electrode was sputtered on glass substrate and a $SnO_2$ sensing material was thermally evaporated on Pt electrode. $SnO_2$ was patterned by lift-off process and then thermally oxidized in $O_2$ condition for 1 hr., $600^{\circ}C$. The size of fabricated sensor was $1.9{\times}2.1\;mm^2$. As a result of CO gas sensing characteristics, this sensor showed 100 mV change for 1,000 ppm and linearity for wide range($0{\sim}10,000\;ppm$) of gas concentrations. And the sensor shows a good recovery characteristics of 1% deviation compared to initial resistance.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.150-150
• /
• 2012

본 연구는 1차원 나노 구조의 합성과 기초적 분석에 관한 연구로써 특히 무기 산화물 나노재료를 그 대상으로 하였다. 내용으로는 첫째, 1차원 코어 나노와이어의 합성을 하였고 Thermal evaporation, substrate의 가열, 그리고 MOCVD 를 사용한 결과들을 나열한다. 둘째, 코어-쉘 나노와이어를 제작하기 위하여 특히 쉘층의 제작방법을 연구하였는데 PECVD, ALD, 그리고 sputtering에 의한 결과들을 나열하고 간단히 설명한다. Thermal evaporation에 의한 1차원 나노와이어 합성의 경우는 MgO의 예를 들었는데 MgO 나노와이어는 Au가 증착된 기판을 열처리하여 Au dot를 형성하고 이의 morphology를 조절하여 최적의 나노와이어 합성조건을 선정하였다. 이로써 기판 morphology가 나노선의 성장및 형상에 영향을 준다는 사실을 알게 되었다. 이 사실은 In2O3기판을 사용하고 이의 표면거칠기를 열처리로 조절하므로써 역시 나노와이어의 성장을 촉진하는 방법을 찾아내었다. 또한 thermal evaporation공법은 source분말의 선택에 따라 다양한 소재를 제작가능하다는 결과를 제시하였다. 예를 들면 SiOx 층이 precoating된 chamber내에서 MgO 나노선을 합성하는 것과 동일한 조건으로 실험을 진행하면 Mg2SiO4 나노와이어가 형성된 것을 확인하였다. 또한 Sn과 MgB2 분말을 함께 적용할 경우 Sn tip을 가진 MgO 나노와이어를 얻을 수 있었다. 이는 Sn이 동시에 촉매의 역할을 하였기 때문일 것으로 추정된다. 한편 Sn과 Bi 혼합분말을 적용한 경우 Bi2Sn2O7 신소재 tip을 포함한 SnO2 나노와이어를 얻을 수 있었다. 이 경우 Bi원자가 적절한 촉매의 역할을 수행한 것으로 사료된다. Substrate의 가열공법에서는 Si wafer상에 각종 금속 즉 Au, Ag, Cu, Co, Mo, W, Pt, Pd등 초박막을 DC sputter 로 형성한후 annealing하는 기술을 사용하였다. 특기할 만한 것은 Co를 사용한 경우 나노와이어의 spring구조를 얻을 수 있었다는 점이다. MOCVD에 의하여는 Ga2O3및 Bi2O3 나노와이어를 비교적 저온에서 합성하였고 In2O3의 경우는 독특한 나노구조를 형성하였고 이의 결정학적 특성에 대하여 조사하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.1
• /
• pp.18-21
• /
• 2014

Because the Pb-based piezoelectric materials showed problems such as an environmental pollution. lead-free $O_3$ materials were studied in the present study. The $O_3$ thin films were deposited at $640^{\circ}C$ on $Pt/Ti/SiO_2$ substrate by pulsed laser deposition (PLD) and were annealed for 5 min at $750^{\circ}C$ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at $750^{\circ}C$ showed a smooth morphology and an improvement of the dielectric and leakage properties, as compared with as-grown samples. However, electrical properties of the $O_3$ thin films obtained in the present study should be improved for piezoelectric applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.746-748
• /
• 2002

The effect of $MnO_2$ addition in $0.05Pb(Sn_{0.5}Sb_{0.5})O_3-0.8PbZrO_3-0.15PbTiO_3$(0.05PSS-0.8PZ-0.15PT) ceramics on crystal structure and electrical properties were studied. The sintering temperature and time were $1230^{\circ}C{\sim}1270^{\circ}C$ and 2hr, respectively. Then crystal structure, dielectric and pyroelectric properties were investigated. All the poled specimens showed the lower dielectric constant and $tan{\delta}$ than the unpoled specimens. Dielectric constant at 1kHz of the 0.05PSS-0.8PZ-0.15PT(MnO2 0.3wt%) system specimen sintered at $1250^{\circ}C$ for 2hr were 270 and showed the lowest $tan{\delta}$ of 0.2% after poling of $2kV_{DC}/mm$ at $150^{\circ}C$ for 30 minutes. Pyroelectric coefficient was maximum value of $50nC/cm^2K$ and Curie temperature was $224^{\circ}C$.