• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.47-52
• /
• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• Journal of the Korean Electrochemical Society
• /
• v.10 no.4
• /
• pp.279-282
• /
• 2007

When reformer for fuel cell is used, CO in hydrogen gas leads to a seriously decreased membrane electrode assembly (MEA) performance by catalyst poisoning. The effect of CO on performance of modified MEA by sputtering method is studied in this paper. The experimental results show that sputtered Pt and Ru thin film improve a single cell performance of MEA and sputtered metal thin film has a CO tolerance. The air injection process on anode show improved CO tolerance test result. Moreover, Pt, Ru and PtRu thin film by sputtering had influence on the CO tolerance with air injection process.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.9
• /
• pp.1641-1647
• /
• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Journal of Sensor Science and Technology
• /
• v.5 no.5
• /
• pp.39-46
• /
• 1996

The Pd or Pt-doped $WO_{3}$ thin-film NOx sensor was fabricated. The $WO_{3}$-based thin films as a gas-sensing layer were deposited at ambient temperature in a high-vacuum resistance heated evaporator and annealed at $500^{\circ}C$. The gas sensitivity ($R_{gas}/R_{air}$) to 5 ppm $NO_{2}$ measured at the operating temperature of $300^{\circ}C$ was 50 (highest sensitivity) for the 0.5 wt.% $Pt-WO_{3}$ sensor.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.74-78
• /
• 1999

For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.100-105
• /
• 1998

This paper describes the preparation of Pt-and $TiO_2$-doped $Nb_2O_5$ thin film by Ion-Beam-Enhanced Deposition. Platinum and titanium doping, and Nb2O5 deposition were carried out in situ. The dependence of oxygen sensing properties on the amounts of Pt and Ti dopant in the $Nb_2O_5$ film was investigated. There were the highist sensitivity, the lowest temperature coefficient and the shortest responce time at doping of 5 mol% $TiO_2$ and 0.3 mol%Pt

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.06a
• /
• pp.93-93
• /
• 1998

• Korean Journal of Crystallography
• /
• v.11 no.2
• /
• pp.95-101
• /
• 2000

Ferroelectric SrBi2Ta2O9 (SBT) thin films of Pt/Ti/SiO2 electrode were fabricated using a sintered SBT target with various Bi2O3 content by rf magnetron sputtering. Good hysteresis loop characteristics were observed in the SBT thin films deposited with 50mol% excess Bi target. SBT thin films crystallized from 650℃ however, good hysteresis loop can be obtained in the film annealed above 700℃. pt/TiO2/SiO2 and Pt/SiO2 electrodes were also used to investigate the Pt electrode dependence of SBT thin films. SBT thin films showed random oriented polycrystalline structure and similar morphology regardless of electrodes with quite different surface morphology. A 0.2㎛ thick SBT film annealed at 750℃ exhibited the remanent polarization (2Pr) of μC/㎠ and coercive voltage(Vc) of 1V at an applied voltage of 5V.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.58 no.4
• /
• pp.538-540
• /
• 2009

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.566-569
• /
• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].