• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.3
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• pp.188-194
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• 2016

We propose an acousto-optic technique for the nondestructive evaluation of adhesion properties of a Pt/Ti thin-film interface. Since there are some problems encountered when using prevailing techniques to nondestructively evaluate the interfacial properties of micro/nano-scale thin-films, we applied an interferometer that combined the acoustic and optical methods. This technique is based on the Michelson interferometer but the resultant surface of the thin film specimen makes interference instead of the mirror when the interface is excited from the acoustic transducer at the driving frequency. The thin film shows resonance-like behavior at a certain frequency range, resulting in a low-contrast fringe pattern. Therefore, we represented quantitatively the change in fringe pattern as a frequency spectrum and discovered the possibility that the interfacial adhesion properties of a thin film can be evaluated using the newly proposed technique.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.84.1-84.1
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• 2011

Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.90-90
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode($Pt/Ti.SiO_2/Si$) using RF sputtering method. The dielectric constant of SBN thin films were increased with the increase of annealing temperature. The maximum dielectric constant of SBN thin film is obtained by annealing at 700[$^{\circ}C$]. The dielectric constant and dielectric loss had a stable value within -5~+5[V].

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.910-914
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• 2018

Since catalyst technology is one of the promising technologies to improve the working performance of next generation energy and electronic devices, many efforts have been made to develop various catalysts with high efficiency at a low cost. However, there are remaining challenges to be resolved in order to use the suggested catalytic materials, such as platinum (Pt), gold (Au), and palladium (Pd), due to their poor cost-effectiveness for device applications. In this study, to overcome these challenges, we suggest a useful method to increase the surface area of a noble metal catalyst material, resulting in a reduction of the total amount of catalyst usage. By employing block copolymer (BCP) self-assembly and nano-transfer printing (n-TP) processes, we successfully fabricated sub-20 nm Pt line and cross-bar patterns. Furthermore, we obtained a highly ordered Pt cross-bar pattern on a Ni thin film and a Pt-embedded Ni thin film, which can be used as hetero hybrid alloy catalyst structure. For a detailed analysis of the hybrid catalytic material, we used scanning electron microscope (SEM), transmission electron microscope (TEM) and energy-dispersive X-ray spectroscopy (EDS), which revealed a well-defined nanoporous Pt nanostructure on the Ni thin film. Based on these results, we expect that the successful hybridization of various catalytic nanostructures can be extended to other material systems and devices in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.846-850
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• 2003

Thin film $SnO_2$ Gas Sensor was fabricated by using ion beam sputtering and ultra thin film Pt catalyst of $45{\AA}$ was deposited on $SnO_2$ thin film. The effects of annealing temperature on the structural properies of $SnO_2$ were investigated using the X-ray diffraction. Using SEM, microstructures of thin film were investigated. The good gas sensitivity is shown when annealing condition is $650^{\circ}C$, 5hr and ultra thin film Pt catalyst thickness is $45{\AA}$.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.154-155
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• 2005

Multi-layer film of $MgO/(FePt-B)_{50nm}/ MgO$ was deposited on Si(100) substrates by RF magnetron sputtering. The boron chips were uniformly placed oil tile FePt target. The boron content of thin film was found to be about 5, 10, 15, 25 and $33 at\%$ by using a CAMECA SX-51 wavelength dispersive spectroscopy (WDX). It is observed that X-ray diffraction patterns of FePt-B film by post-annealing exhibited a transformation from disordered fcc structure to ordered $Ll_0$ phase with fct structure from around $400^{\circ}C$. By adding B, annealing temperature for ordering is about $200^{\circ}C$ lower than that of pure FePt. This remarkable decrease of the annealing temperature is closely related to the high diffusivities of Fe and Pt associated with the defects caused by movements of B atoms. The maximum coercivity(Hc) for FePt films was found to be ${\~}$13 kOe after annealing at $600^{\circ}C$ for 1hr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.575-578
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• 2000

In this work, all solid-state thin film supercapacitor(TFSC) was fabricated using tungsten trioxide (WO$_3$) with a structure WO$_3$/LiPON/WO$_3$/Pt/TiO$_2$/Si (substrate). After TiO$_2$ was deposited on Si(100) wafer by d.c. reactive sputtering, the Pt current collector films were grown on TiO$_2$glue layer without breaking vacuum by d.c. sputtering. Fabrication conditions of WO$_3$ thin film were such that substrate temperature, working pressure, gas ratio of $O_2$/Ar and r.f. power were room temperature, 5 mTorr, 20% (O$_2$(8sccm)/Ar(32sccm)) and 200W, respectively. LiPON electrolyte film were grown on the WO$_3$ film using r.f. magnetron sputtering at room temperature. The XRD pattern of the as-deposited WO$_3$ thin film were shown no crystalline peak (amorphous). The SEM image of as-deposited WO$_3$ thin film showed that the surface is smooth and uniform. The capacitiy of as-fabricated TFSC was 0$\times$10$^{-2}$ F/$\textrm{cm}^2$-${\mu}{\textrm}{m}$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).