• 대한전자공학회논문지TE
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• 제37권1호
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• pp.18-26
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• 2000

본 논문에서는 광대역 특성을 가진 고주파 압전 변환기를 이론적으로 고찰하였고, 압전변환기를 제작하여 이론값과 실험값을 비교, 분석하여 그 응용가능성을 확인하였다. ZnO(3.825${\mu}m$/Pt/Sapphire(0001)구조의 압전변환기의 공진주파수는 827.47MHz로서 압전체의 반파장주파수에서 공진이 일어남을 알 수 있었다. 또한, 삽입손실은 약 -50dB이었고, 최소의 삽입손실은 이론적인 분석과 잘 일치하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.191-191
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• 2009

$Bi_4Ti_3O_{12}$ (BiT) thin films were well developed on the Pt/Ti/$SiO_2/Si$ substrate by a metal organic decomposition (MOD) method. Oxygen was effective on the crystallization of the BiT thin films during a rapid thermal annealing process. The electrical properties of the BiT films dependant on the oxygen partial pressure were investigated. No crystalline phase was observed for the BiT film annealed at $700^{\circ}C$ under oxygen free atmosphere. However, its crystallinity was significantly evolutionned with increasing oxygen partial pressure. In addition, its dielectric and piezoelectric properties were enhanced with increasing oxygen partial pressure to 10 torr. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current and piezoelectric constant ($d_{33}$) was also considerably improved, being as 0.62 nA/$cm^2$ at 1 V and approximately 51 pm/V, respectively.

• 센서학회지
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• 제23권1호
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• pp.15-18
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• 2014

We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.392-397
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• 2011

The effect of various post-annealing temperature to sputtered Pb(Zr,Ti)$O_3$ (PZT) thin films was investigated. The crystallization process, surface morphology and the electrical characteristics strongly depends on the rapid thermal annealing (RTA). In radio frequency (RF) sputtering methods, there were many papers mostly forcing on the crystal forming and the surface variations with different elements distribution (Pb, Ti, Zr, O) on the surface of the PZT layer. In this experiment, the post-annealing treatment promoted the Pb volatilization in PZT thin film and affected the Ti diffused throughout the Pt layer into the PZT layer. Second ion mass spectroscopy (SIMS) analysis was employed to show that the Pb element in the PZT layer was decreased at the same time the Ti element mass was slight decreased than Pb with increasing RTA temperature. That result prove the content of Pb affect the PZT thin film property.

• 분석과학
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• 제8권4호
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• pp.675-682
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• 1995

Thin films of buckminsterfullerene($C_{60}$) formed by solution drop casting on Pt foil electrode surfaces were studied by cyclic voltammetry(CV) in acetonitrile(MeCN) containing quaternary ammonium or alkali-metal salts as supporting electrolyte. The electrochemical behaviors of $C_{60}$ films are found to be strongly dependent on the nature of the supporting electrolytes, especially with tetrabutyl ammonium perchlorate (TBAP, $NBu_4ClO_4$), and tetrabutyl ammonium tetrafluoroborate ($TBABF_4$, $NBu_4BF_4$). Reasonably stable films are formed into which electrons can be injected. The interaction of $C_{60}$ film with the quaternary ammonium cation may produce the fulleride salts $(TBA^+)(C{_{60}}^-)$ and $(TBA^+)_2(C{_{60}}^{2-})$. The bulk electroreduction with a controlled potential to generate the soluble $C{_{60}}^{3-}$ anions(dark red-brown color) is followed by electrooxidative deposition to produce a neutral $C_{60}$ film on the surface. The peak currents($I_{pc}$ and $I_{pa}$) of these thin film were dramatically decreased with repetitive potential scanning. These results could be explained by the adsorption-desorption phenomena and ion pairing interaction of reduced species($C{_{60}}^-$, and $C{_{60}}^{2-}$) onto the electrode surface. The peak current changes and peak potential shifts of the thin $C_{60}$ film in cyclic voltammograms formed from solution were observed by varying scan rates.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• 센서학회지
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• 제17권4호
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• pp.273-280
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• 2008

Monolith aperture-type oxygen sensors with simple structure of YSZ(pin-hole)/Pt/ YSZ(solid electrolyte)/Pt were fabricated by co-firing technique. To enhance the yield of productivity, a couple of YSZ green sheets for diffused barrier and solid electrolyte were prepared by tape-casting and co-firing method. The limit current characteristics of the oxygen sensors were measured between 500 and $650^{\circ}C$ The heating temperature of $600^{\circ}C$ was optimum as a portable oxygen sensor in the range of oxygen concentration from 0 to 75 vol%. Linear proficiency of limit current behavior as a function of oxygen concentration was controlled by the variation of aperture dimension. The fabricated oxygen sensors showed the stable sensing output for 30 days. Gas leakage in bonding area due to warping, cracking and thermal cycling was not found in the period.

• Journal of Magnetics
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• 제15권3호
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• pp.99-102
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• 2010

We present the fractal properties of the magnetic domain walls in $(5-{\AA}\;Co_{90}Fe_{10}/10-{\AA}\;Pt)_n$ multilayer films with perpendicular magnetic anisotropy for the number of repeats n (1 to 5). In these films, the magnetization reversed due to the domain wall propagation throughout the films with rare nucleations. As n increased, it was observed that the jaggedness of the domain walls increased noticeably, which is possibly due to the accumulation of irregularities at the layer interfaces. The jaggedness of the domain walls was analyzed in terms of the fractal dimension by use of the ruler method, and it was revealed that the fractal dimension significantly changed from $1.0{\pm}0.002$ to $1.3{\pm}0.05$ as n increased from 1 to 5.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.189-192
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• 1996

In this paper ZnO Piezoelectric transducers were fabricated as follows, counter electrode (pt 99.9%) was deposited on the sapphire substrates by DC sputter method, and then piezoelectric layer (ZnO 99.999%) was deposited on the counter electrode according to the sputtering parameters, and then top electrode (pt 99.9%) was deposited on the piezoelectric layer by Electron Beam Gun Evaporator. Structural characteristic of deposited ZnO thin film was measured by XRD, SEM. Also, Frequency characteristic of ZnO transducer was analyzed theoretically and practically for input frequencies.

• 한국진공학회지
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• 제11권2호
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• pp.103-107
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• 2002

Metal/ferroelectric/semiconductor field effect transistors(MFSFET′s) with various gate electrodes, that are aluminum, platinum and poly-Si, using rapid thermal annealed $LiNbO_3$/Si(100) structures were fabricated and the properties of the FET′s have been discussed. The drain current of the "on" state of FET with Pt electrode was more than 3 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 1.5 V, which means the memory operation of the MFSFET. A write voltage as low as about $\pm$4 V, which is applicable to low power integrated circuits, was used for polarization reversal. The retention properties of the FET using Al electrode were quite good up to about $10^3$ s and using Pt electrode remained almost the same value of its initial value over 2 days at room temperature.