• Title/Summary/Keyword: Pt/Ti electrode

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Sn-modified Platinized Ti 전극 제조를 위한 Ti의 백금 도금 특성 (Characteristics of Ti Platinization for Fabrication Sn-modified Platinized Ti Electrode)

  • 김광욱;김성민;이일희
    • Korean Chemical Engineering Research
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    • 제45권2호
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    • pp.124-132
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    • 2007
  • 본 논문에서는 Ti 모재에 대한 Pt 도금 특성 연구를 통하여 안정한 platinized Ti 전극의 제조 방법이 제시되었으며, Sn이 흡착된 platinized Ti 전극의 질산염 이온에 대한 전기화학적 특성이 연구되었다. 에칭된 Ti 모재 표면에 전착된 Pt 도금 층 내에 적당하게 공간적 틈을 갖도록 도금하는 것은 도금 후 표면에 잔존하는 도금 용액 오염원을 제거하는데 효과적이며, 또 용액과 접하게 되는 전극의 실제 표면적을 최대화할 수 있었다. 제작된 platinized Ti 전극을 끓이는 과정과 전해 세정 과정을 통해 안정적이며 재현성 있게 만드는 것은 Sn-modified platinized Ti 전극에서 표면의 Sn 덮힘율을 정량화하는데 있어 매우 중요하였다. 전해 세정 과정은 전극 표면에 형성된 솜털과 같은 미세한 돌기들이 없어지면서 전극 표면을 안정화된 구조로 변화시켰다. 본 연구의 경우 질산염 이온의 환원을 목적으로 하는 Sn-modified platinized Ti 전극은 약 30분 도금 시간을 통해 제조한 경우가 가장 좋았다.

강유전체 PZT박막의 신뢰도에 미치는 헤테로구조 전극의 영향에 대한 연구 (Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Film)

  • 이병수;이복희;이덕출
    • 전기학회논문지P
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    • 제52권1호
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    • pp.14-19
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    • 2003
  • The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

Electrochemical Degradation of Phenol and 2-Chlorophenol Using Pt/Ti and Boron-Doped Diamond Electrodes

  • Yoon, Jang-Hee;Shim, Yoon-Bo;Lee, Byoung-Seob;Choi, Se-Yong;Won, Mi-Sook
    • Bulletin of the Korean Chemical Society
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    • 제33권7호
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    • pp.2274-2278
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    • 2012
  • To test the efficiency of the BDD electrode for complete mineralization of organic wastewater, phenol and 2-chlorophenol (2-CP) were treated electrochemically with both an active Pt/Ti electrode and a nonactive boron doped diamond (BDD) electrode, respectively, in neutral aqueous medium. Aqueous solutions of both phenol and 2-chlorophenol were treated electrochemically using an in-house fabricated flow through electrochemical cell (FTEC). The experimental variables included current input, treatment time, and the flow rate of the solutions. Depending on the magnitude of the applied current and reaction time, the compounds were either completely degraded or partially oxidized to other intermediates. Removal efficiencies reached as high as 93.2% and 94.8% both at the Pt/Ti electrode and BDD electrode, respectively, at an applied current of 200 mA for a 3.0 hr reaction and a flow rate of 4 mL/min. The BDD electrode was much more efficient for the complete mineralization of phenol and 2-chlorophenol than the Pt/Ti electrode.

Effects of Heterostructure Electrodes on the Reliability of Ferroelectric PZT Thin Films

  • Kim, Seung-Hyun;Woo, Hyun-Jung;Koo, Chang-Young;Yang, Jeong-Seung;Ha, Su-Min;Park, Dong-Yeon;Lee, Dong-Su;Ha, Jo-Woong
    • 한국세라믹학회지
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    • 제39권4호
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    • pp.341-345
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    • 2002
  • The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties with minimal leakage current.

Resistance Switching Characteristics of Metal/TaOx/Pt with Oxidation degree of metal electrodes

  • Na, Hee-Do;Kim, Jong-Gi;Sohn, Hyun-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.187-187
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    • 2010
  • In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

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Crystallographic Relationships of (Ba, Sr) $TiO_3$Thin Film Prepared by Metal-Organic Chemical Vapor Deposition on (111) Textured Pt Electrode

  • Yoo, Dong-Chul;Lee, Jeong-Yong
    • 한국세라믹학회지
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    • 제37권11호
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    • pp.1126-1129
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    • 2000
  • The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

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작업전극과 상대전극에 탄소나노튜브를 이용한 염료감응 태양전지의 특성연구 (The characteristics of dye-sensitized solar cells using carbon nanotube in working and counter electrodes)

  • 김보라;송수일;이학수;조남준
    • 분석과학
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    • 제27권6호
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    • pp.308-313
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    • 2014
  • 염료감응형 태양전지의 광전극 및 상대전극에 탄소나노튜브를 도입하여 전지의 광전기적 특성 변화를 EIS, J-V 특성곡선 및 UV-Vis 분광기를 이용하여 분석하였다. $TiO_2$ 광전극의 전기전도도 및 광전효율을 향상시키기 위해 전자전달 촉진자 역할을 하는 multi-wall carbon nanotube (MWCNT)를 $TiO_2$와 혼합하여 $TiO_2$-MWCNT 복합체를 sol-gel 연소 복합공정을 통해 제조하여 조사한 결과 0.1 wt% MWCNT를 첨가한 경우, $TiO_2$만을 사용한 경우에 비해 약 12.5%의 향상된 효율을 보였다. $TiO_2$-MWCNT 복합체에서 MWCNT가 $TiO_2$ 층의 전자이동을 향상시켜 저항을 감소하고 염료와 전자의 재결합을 감소시킨 결과로 생각된다. 그러나 0.1 wt%보다 많은 MWCNT를 첨가할 경우 광투과도 및 염료의 흡착량을 감소시켜 효율이 감소하였다. 또한 상대전극에 MWCNT와 MWCNT-Pt를 적용하였을 경우 각각의 효율은 1.2%와 4.1%로 MWCNT만 적용할 때 보다 백금이 담지된 MWCNT를 사용하였을 경우에 백금과 비슷한 효율을 보였다.

Pb(Zr, Ti)$O_3$ 박막에서 결정립 크기 포화 현상에 관한 연구 (A Study on the Saturation of Grain Size in Pb(Zr, Ti)$O_3$ Thin Films)

  • 이장식;김찬수;주승기
    • 한국세라믹학회지
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    • 제37권6호
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    • pp.530-536
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    • 2000
  • During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

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MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향 (Effects of Bottom Electrode to Dielectric and Electrical Properties of MOD Derived Ferroelectric SBT Thin Films)

  • 김태훈;송석표;김병호
    • 한국전기전자재료학회논문지
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    • 제13권8호
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    • pp.694-699
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    • 2000
  • S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

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